公开(公告)号：JPS61248561A

公开(公告)日：1986-11-05

申请号：JP663786

申请日：1986-01-17

Applicant: IBM

Inventor： FREEOUF JOHN LAWRENCE ,  JACKSON THOMAS NELSON ,  KIRCHNER PETER DANIEL ,  TANG JEFFREY YUH-FONG ,  WOODALL JERRY MACPHERSON

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/68 ,  H01L29/737 ,  H01L29/76

公开(公告)号：DE3560644D1

公开(公告)日：1987-10-22

申请号：DE3560644

申请日：1985-05-17

Applicant: IBM

Inventor： FREEOUF JOHN LAWRENCE ,  JACKSON THOMAS NELSON

IPC: C30B23/08 ,  C23C14/24 ,  C23C14/26 ,  C23C14/56 ,  C30B23/06 ,  C30B25/08 ,  H01L21/203

Abstract: In a molecular beam epitaxy furnace, a heater is described for heating the interior of an effusion cell. The heater includes an outer cylindrical sleeve having one end connected to receive a vacuum, and an opposite end extending into the furnace. An inner sleeve is provided coaxial with the outer cylindrical sleeve, one end of the inner sleeve being sealed with the opposite end of the cylindrical sleeve. The inner sleeve extends along a portion of the outer cylindrical sleeve providing an interior vacuum chamber. A heating element is disposed between the cylindrical sleeve and inner sleeve which heats the interior crucible receiving chamber and a crucible therein bearing semiconductor constituent material such that the semiconductor constituent material effuses without contamination from the heating element.

公开(公告)号：DE3165504D1

公开(公告)日：1984-09-20

申请号：DE3165504

申请日：1981-04-02

Applicant: IBM

Inventor： FREEOUF JOHN LAWRENCE ,  HAAG WILLIAM JOHN ,  WOODALL JERRY MCPHERSON

IPC: C04B41/87 ,  C04B35/583 ,  C04B41/00 ,  C04B41/45 ,  C04B41/51 ,  C04B41/53 ,  C04B41/80 ,  C04B41/81 ,  C04B41/88 ,  C04B41/91 ,  C23C14/24 ,  C04B35/58 ,  C04B41/06 ,  C23C13/12 ,  C23C17/00

公开(公告)号：DE3687425D1

公开(公告)日：1993-02-18

申请号：DE3687425

申请日：1986-04-16

Applicant: IBM

Inventor： FREEOUF JOHN LAWRENCE ,  JACKSON THOMAS NELSON ,  KIRCHNER PETER DANIEL ,  TANG JEFFREY YUH-FONG ,  WOODALL JERRY MACPHERSON

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/68 ,  H01L29/737 ,  H01L29/76

Abstract: The composition and doping profile of the emitter (4) produces an electron gas (16) in the base (3) adjacent a band offset heterojunction interface between the emitter and the base. When a suitable bias is applied, the electron gas is confined adjacent to the interface by a low barrier (produced by layer 10). The kinetic energy of ballistic electrons crossing the base to the collector (2) is controlled to prevent intervalley scattering by an electrostatic barrier (7) that under influence of bias provides an essentially level conduction band in the portion of the base adjacent the collector.

公开(公告)号：DE3379701D1

公开(公告)日：1989-05-24

申请号：DE3379701

申请日：1983-10-05

Applicant: IBM

Inventor： FREEOUF JOHN LAWRENCE ,  JACKSON THOMAS NELSON ,  OELHAFEN PETER UNIVERSITY OF B ,  PETTIT GEORGE DAVID ,  WOODALL JERRY MACPHERSON

IPC: H01L21/306 ,  H01L21/314 ,  H01L21/316 ,  H01L23/29 ,  H01L23/31 ,  H01L23/28

Abstract: A monocrystalline compound semiconductor substrate (1) is passivated with a layer (3) of the most volatile element of the semiconductor compound to prevent the formation of oxides that would interfere with further processing. A surface layer of arsenic is formed on a GaAs substrate by exposing the substrate to light having a photon energy greater than 1.8 eV, at a power density of 0.01 to 0.5 watts per cm for a period of 10 to 30 minutes while the substrate is immersed in a 1 : 1 HCl : H2O solution. The passivated substrate may be stored and handled in air. When desired, the As layer can be removed by low temperature baking, for example at 150 DEG to 300 DEG C.

公开(公告)号：IT1148725B

公开(公告)日：1986-12-03

申请号：IT2461480

申请日：1980-09-12

Applicant: IBM

Inventor： FREEOUF JOHN LAWRENCE ,  WOODALL JERRY MACPHERSON

IPC: B01J20/28 ,  C01B3/00 ,  C01B33/02 ,  C01B33/021 ,  F17C11/00 ,  C01B

公开(公告)号：DE3063681D1

公开(公告)日：1983-07-14

申请号：DE3063681

申请日：1980-08-14

Applicant: IBM

Inventor： FREEOUF JOHN LAWRENCE

IPC: B01J20/28 ,  C01B3/00 ,  C01B33/02 ,  C01B33/021 ,  F17C11/00 ,  C10L5/00

公开(公告)号：DE3687425T2

公开(公告)日：1993-07-15

申请号：DE3687425

申请日：1986-04-16

Applicant: IBM

Inventor： FREEOUF JOHN LAWRENCE ,  JACKSON THOMAS NELSON ,  KIRCHNER PETER DANIEL ,  TANG JEFFREY YUH-FONG ,  WOODALL JERRY MACPHERSON

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/68 ,  H01L29/737 ,  H01L29/76

Abstract: The composition and doping profile of the emitter (4) produces an electron gas (16) in the base (3) adjacent a band offset heterojunction interface between the emitter and the base. When a suitable bias is applied, the electron gas is confined adjacent to the interface by a low barrier (produced by layer 10). The kinetic energy of ballistic electrons crossing the base to the collector (2) is controlled to prevent intervalley scattering by an electrostatic barrier (7) that under influence of bias provides an essentially level conduction band in the portion of the base adjacent the collector.

公开(公告)号：DE3382340D1

公开(公告)日：1991-08-22

申请号：DE3382340

申请日：1983-08-02

Applicant: IBM

Inventor： FREEOUF JOHN LAWRENCE ,  JACKSON THOMAS NELSON ,  LAUX STEVEN ERIC ,  WOODALL JERRY MAC PHERSON

IPC: H01L29/80 ,  H01L21/338 ,  H01L29/772 ,  H01L29/812

Abstract: A semiconductor device employing two-dimensional space charge modulation in a semiconductor body 1 has an approximately Debye length wide ohmic contact 3 and a rectifying contact 2 positioned within a Debye length of the contact 3. Electrical conduction between the contact 3 and a remotely positioned contact 4 is controlled by the potential applied to the rectifying contact 2.