公开(公告)号：JPS61248561A

公开(公告)日：1986-11-05

申请号：JP663786

申请日：1986-01-17

Applicant: IBM

Inventor： FREEOUF JOHN LAWRENCE ,  JACKSON THOMAS NELSON ,  KIRCHNER PETER DANIEL ,  TANG JEFFREY YUH-FONG ,  WOODALL JERRY MACPHERSON

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/68 ,  H01L29/737 ,  H01L29/76

公开(公告)号：DE3687425D1

公开(公告)日：1993-02-18

申请号：DE3687425

申请日：1986-04-16

Applicant: IBM

Inventor： FREEOUF JOHN LAWRENCE ,  JACKSON THOMAS NELSON ,  KIRCHNER PETER DANIEL ,  TANG JEFFREY YUH-FONG ,  WOODALL JERRY MACPHERSON

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/68 ,  H01L29/737 ,  H01L29/76

Abstract: The composition and doping profile of the emitter (4) produces an electron gas (16) in the base (3) adjacent a band offset heterojunction interface between the emitter and the base. When a suitable bias is applied, the electron gas is confined adjacent to the interface by a low barrier (produced by layer 10). The kinetic energy of ballistic electrons crossing the base to the collector (2) is controlled to prevent intervalley scattering by an electrostatic barrier (7) that under influence of bias provides an essentially level conduction band in the portion of the base adjacent the collector.

公开(公告)号：BR8901970A

公开(公告)日：1989-12-05

申请号：BR8901970

申请日：1989-04-26

Applicant: IBM

Inventor： CHAPPELL BARBARA ALANE ,  LIEN YEONG-CHANG ,  TANG JEFFREY YUH-FONG

IPC: G11C11/41 ,  G11C8/12 ,  G11C5/02

Abstract: A transposable memory architecture for providing equally fast access to stored data in two or more dimensions. This architecture is provided by orthogonal wiring of access devices, word lines and bit lines with independent random accessing capability for data in each direction. The transposable memory architecture (TMA) cell directly implements the TMA architecture using only one access device per dimension of access. This invention also describes multiple transposable memory architecture (MTMA) device for additional data path flexibility. The read and write operations described provide access and cycle times approximately equivalent to those for a convention one-dimension RAM.

公开(公告)号：DE68915608T2

公开(公告)日：1994-12-01

申请号：DE68915608

申请日：1989-03-08

Applicant: IBM

Inventor： CHAPPELL BARBARA ALANE ,  LIEN YEONG-CHANG ,  TANG JEFFREY YUH-FONG

IPC: G11C11/41 ,  G11C8/12 ,  G11C8/00

Abstract: A transposable memory architecture for providing equally fast access to stored data in two or more dimensions. This architecture is provided by orthogonal wiring of access devices, word lines and bit lines with independent random accessing capability for data in each direction. The transposable memory architecture (TMA) cell directly implements the TMA architecture using only one access device per dimension of access. This invention also describes multiple transposable memory architecture (MTMA) device for additional data path flexibility. The read and write operations described provide access and cycle times approximately equivalent to those for a convention one-dimension RAM.

公开(公告)号：DE68915608D1

公开(公告)日：1994-07-07

申请号：DE68915608

申请日：1989-03-08

Applicant: IBM

Inventor： CHAPPELL BARBARA ALANE ,  LIEN YEONG-CHANG ,  TANG JEFFREY YUH-FONG

IPC: G11C11/41 ,  G11C8/12 ,  G11C8/00

Abstract: A transposable memory architecture for providing equally fast access to stored data in two or more dimensions. This architecture is provided by orthogonal wiring of access devices, word lines and bit lines with independent random accessing capability for data in each direction. The transposable memory architecture (TMA) cell directly implements the TMA architecture using only one access device per dimension of access. This invention also describes multiple transposable memory architecture (MTMA) device for additional data path flexibility. The read and write operations described provide access and cycle times approximately equivalent to those for a convention one-dimension RAM.

公开(公告)号：DE3687425T2

公开(公告)日：1993-07-15

申请号：DE3687425

申请日：1986-04-16

Applicant: IBM

Inventor： FREEOUF JOHN LAWRENCE ,  JACKSON THOMAS NELSON ,  KIRCHNER PETER DANIEL ,  TANG JEFFREY YUH-FONG ,  WOODALL JERRY MACPHERSON

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/68 ,  H01L29/737 ,  H01L29/76

Abstract: The composition and doping profile of the emitter (4) produces an electron gas (16) in the base (3) adjacent a band offset heterojunction interface between the emitter and the base. When a suitable bias is applied, the electron gas is confined adjacent to the interface by a low barrier (produced by layer 10). The kinetic energy of ballistic electrons crossing the base to the collector (2) is controlled to prevent intervalley scattering by an electrostatic barrier (7) that under influence of bias provides an essentially level conduction band in the portion of the base adjacent the collector.