公开(公告)号：EP1595275A4

公开(公告)日：2007-10-31

申请号：EP04705302

申请日：2004-01-26

Applicant: IBM

Inventor： COHEN STEPHEN A ,  GATES STEPHAN M ,  HEDRICK JEFFREY C ,  HUANG ELBERT E ,  PFEIFFER DIRK

IPC: H01L23/532 ,  H01L20060101 ,  H01L21/00 ,  H01L21/312 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48

CPC classification number: H01L21/02282 ,  H01L21/02126 ,  H01L21/02222 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76832 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/31663 ,  H01L2924/00

Abstract: The present invention comprises an interconnect structure including a metal, interlayer dielectric and a ceramic diffusion barrier formed therebetween where the ceramic diffusion barrier has a composition, SivNwCxOyHz, where 0.1≤v≤0.9, 0≤w≤0.5, 0.01≤x≤0.9, 0≤y≤0.7, 0.01≤z≤0.8 for v+w+x+y+Z=1. The ceramic diffusion barrier acts as a diffusion barrier to metals, i.e., copper. The present invention also comprises a method for forming the inventive ceramic diffusion barrier including the steps depositing a polymeric preceramic having a composition SivNwCxOyHz, where 0.1

公开(公告)号：WO2004068550A3

公开(公告)日：2005-10-27

申请号：PCT/US2004002125

申请日：2004-01-26

Applicant: IBM ,  COHEN STEPHEN A ,  GATES STEPHAN M ,  HEDRICK JEFFREY C ,  HUANG ELBERT E ,  PFEIFFER DIRK

Inventor： COHEN STEPHEN A ,  GATES STEPHAN M ,  HEDRICK JEFFREY C ,  HUANG ELBERT E ,  PFEIFFER DIRK

IPC: H01L20060101 ,  H01L21/00 ,  H01L21/312 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/532

CPC classification number: H01L21/02282 ,  H01L21/02126 ,  H01L21/02222 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76832 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/31663 ,  H01L2924/00

Abstract: The present invention comprises an interconnect structure including a metal, interlayer dielectric and a ceramic diffusion barrier formed therebetween where the ceramic diffusion barrier has a composition, SivNwCxOyHz, where 0.1

Abstract translation: 本发明包括在其间形成的金属，层间电介质和陶瓷扩散阻挡层的互连结构，其中陶瓷扩散阻挡层具有组成SivNwCxOyHz，其中0.1 <= v <= 0.9,0 <= w <= 0.5,0.01 < = x <= 0.9,0 <= y <= 0.7,0.01 <= z <= 0.8对于v + w + x + y + Z = 1。 陶瓷扩散阻挡层用作金属的扩散阻挡层，即铜。 本发明还包括一种用于形成本发明的陶瓷扩散阻挡层的方法，包括沉积具有组成SivNwCxOyHz的聚合物预陶瓷的步骤，其中0.1