公开(公告)号：EP1495365A4

公开(公告)日：2009-06-03

申请号：EP03723925

申请日：2003-04-01

Applicant: IBM

Inventor： PFEIFFER DIRK ,  ANGELOPOULOS MARIE ,  BABICH KATHERINA ,  BROCK PHILLIP ,  HUANG WU-SONG ,  MAHOROWALA ARPAN P ,  MEDEIROS DAVID R ,  SOORIYAKUMARAN RATNAM

IPC: G03F7/11 ,  G03F7/004 ,  G03F7/038 ,  G03F7/075 ,  G03F7/09 ,  H01L21/027 ,  G03F7/00 ,  G03F7/26 ,  H01L21/312

CPC classification number: H01L21/0276 ,  G03F7/0045 ,  G03F7/0757 ,  G03F7/091 ,  Y10S430/151

Abstract: Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions of the invention are advantagously useful with shorter wavelenght lithographic processes and/or have minimal residual acid content.

公开(公告)号：EP1595276A4

公开(公告)日：2012-03-28

申请号：EP04705307

申请日：2004-01-26

Applicant: IBM

Inventor： GATES STEPHEN M ,  HEDRICK JEFFREY C ,  HUANG ELBERT E ,  PFEIFFER DIRK

IPC: G03G13/06 ,  H01L20060101 ,  H01L21/00 ,  H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L21/44 ,  H01L23/48 ,  H05B6/64

CPC classification number: H01L21/02126 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/31144 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/316 ,  Y10S430/146 ,  Y10T428/31663

公开(公告)号：EP1595275A4

公开(公告)日：2007-10-31

申请号：EP04705302

申请日：2004-01-26

Applicant: IBM

Inventor： COHEN STEPHEN A ,  GATES STEPHAN M ,  HEDRICK JEFFREY C ,  HUANG ELBERT E ,  PFEIFFER DIRK

IPC: H01L23/532 ,  H01L20060101 ,  H01L21/00 ,  H01L21/312 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48

CPC classification number: H01L21/02282 ,  H01L21/02126 ,  H01L21/02222 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76832 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/31663 ,  H01L2924/00

Abstract: The present invention comprises an interconnect structure including a metal, interlayer dielectric and a ceramic diffusion barrier formed therebetween where the ceramic diffusion barrier has a composition, SivNwCxOyHz, where 0.1≤v≤0.9, 0≤w≤0.5, 0.01≤x≤0.9, 0≤y≤0.7, 0.01≤z≤0.8 for v+w+x+y+Z=1. The ceramic diffusion barrier acts as a diffusion barrier to metals, i.e., copper. The present invention also comprises a method for forming the inventive ceramic diffusion barrier including the steps depositing a polymeric preceramic having a composition SivNwCxOyHz, where 0.1

公开(公告)号：WO2004068550A3

公开(公告)日：2005-10-27

申请号：PCT/US2004002125

申请日：2004-01-26

Applicant: IBM ,  COHEN STEPHEN A ,  GATES STEPHAN M ,  HEDRICK JEFFREY C ,  HUANG ELBERT E ,  PFEIFFER DIRK

Inventor： COHEN STEPHEN A ,  GATES STEPHAN M ,  HEDRICK JEFFREY C ,  HUANG ELBERT E ,  PFEIFFER DIRK

IPC: H01L20060101 ,  H01L21/00 ,  H01L21/312 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/532

CPC classification number: H01L21/02282 ,  H01L21/02126 ,  H01L21/02222 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76832 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/31663 ,  H01L2924/00

Abstract: The present invention comprises an interconnect structure including a metal, interlayer dielectric and a ceramic diffusion barrier formed therebetween where the ceramic diffusion barrier has a composition, SivNwCxOyHz, where 0.1

Abstract translation: 本发明包括在其间形成的金属，层间电介质和陶瓷扩散阻挡层的互连结构，其中陶瓷扩散阻挡层具有组成SivNwCxOyHz，其中0.1 <= v <= 0.9,0 <= w <= 0.5,0.01 < = x <= 0.9,0 <= y <= 0.7,0.01 <= z <= 0.8对于v + w + x + y + Z = 1。 陶瓷扩散阻挡层用作金属的扩散阻挡层，即铜。 本发明还包括一种用于形成本发明的陶瓷扩散阻挡层的方法，包括沉积具有组成SivNwCxOyHz的聚合物预陶瓷的步骤，其中0.1

公开(公告)号：WO2004068551A3

公开(公告)日：2005-05-26

申请号：PCT/US2004002126

申请日：2004-01-26

Applicant: IBM ,  GATES STEPHEN M ,  HEDRICK JEFFREY C ,  HUANG ELBERT E ,  PFEIFFER DIRK

Inventor： GATES STEPHEN M ,  HEDRICK JEFFREY C ,  HUANG ELBERT E ,  PFEIFFER DIRK

IPC: G03G13/06 ,  H01L20060101 ,  H01L21/00 ,  H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L21/44 ,  H01L23/48 ,  H05B6/64

CPC classification number: H01L21/02126 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/31144 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/316 ,  Y10S430/146 ,  Y10T428/31663

Abstract: The present invention comprises a method for forming a hardmask including the steps of depositing a polymeric preceramic precursor film atop a substrate; converting the polymeric preceramic precursor film into at least one ceramic layer, where the ceramic layer has a composition of SivNWCXOyHZ where 0.1

Abstract translation: 本发明包括一种用于形成硬掩模的方法，包括以下步骤：在基底顶上沉积聚合物预陶瓷前体膜; 将聚合物陶瓷前体膜转化为至少一个陶瓷层，其中陶瓷层具有SivNWCXOyHZ的组成，其中0.1≤v≤0.9,0<= w <0.5,0.05 <= x <= 0.9,0

公开(公告)号：JP2007129222A

公开(公告)日：2007-05-24

申请号：JP2006294892

申请日：2006-10-30

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： LAI KAFAI ,  PFEIFFER DIRK ,  ROSENBLUTH ALAN E

IPC: H01L21/027

CPC classification number: G03F7/70216

Abstract: PROBLEM TO BE SOLVED: To provide a method and a system for exposing a resist layer with regions of photosensitivity to an image in a lithographic process using a high numerical aperture imaging tool. SOLUTION: There is employed a substrate having thereover a layer reflective to the imaging tool radiation and a portion of the radiation containing an aerial image passes through the resist layer, and reflects back to the resist layer. The reflected radiation forms an interference pattern in the resist layer of the projected aerial image through the resist layer thickness. The thickness and location of the resist layer region of photosensitivity with respect to the reflective layer are selected to include from within the interference pattern higher contrast portions of the interference pattern in the direction of the resist thickness, to exclude lower contrast portions of the interference pattern in the resist thickness direction from the resist layer region of photosensitivity, and to improve contrast of the aerial image in the resist layer region of photosensitivity. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种方法和系统，用于使用高数值孔径成像工具在光刻工艺中将抗蚀剂层与对图像的光敏感区域进行曝光。 解决方案：采用具有反射成像工具辐射的层的衬底，并且包含空间图像的一部分辐射穿过抗蚀剂层，并反射回抗蚀剂层。 反射辐射通过抗蚀剂层厚度在投影空间图像的抗蚀剂层中形成干涉图案。 选择相对于反射层的光敏层的抗蚀剂层区域的厚度和位置，以便在干涉图形内包括在抗蚀剂厚度方向上的干涉图案的较高对比度部分，以排除干涉图案的较低对比度部分 在抗蚀剂厚度方向上从抗蚀剂层区域的感光度，并改善抗敏剂层区域中的空间图像的光敏性的对比度。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2005055893A

公开(公告)日：2005-03-03

申请号：JP2004223337

申请日：2004-07-30

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： BABICH KATHERINA ,  MAHOROWALA ARPAN P ,  MEDEIROS DAVID R ,  PFEIFFER DIRK

IPC: G03F7/11 ,  G03C3/00 ,  G03F1/14 ,  G03F7/004 ,  G03F7/075 ,  G03F7/09 ,  G03F7/20 ,  H01L21/00 ,  H01L21/027 ,  H01L21/312 ,  H01L21/3213

CPC classification number: G03F7/091 ,  G03F7/0757 ,  H01L21/0274 ,  H01L21/0276 ,  H01L21/32139

Abstract: PROBLEM TO BE SOLVED: To provide a composition and techniques for processing a semiconductor device, more particularly, to provide an antireflective hardmask composition in one aspect of the invention and to provide a method for processing a semiconductor device in another aspect.
SOLUTION: The composition contains a fully condensed polyhedral oligosilsesquioxane, {RSiO
1.5 }
n , wherein n equals 8; and at least one chromophore moiety and transparent moiety. The method comprises steps of: providing a material layer on a substrate; and forming an antireflective hardmask layer over the material layer. The antireflective hardmask layer comprises a fully condensed polyhedral oligosilsesquioxane, {RSiO
1.5 }
n , wherein n equals 8; and at least one chromophore moiety and transparent moiety.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 解决的问题：提供一种用于处理半导体器件的组合物和技术，更具体地，提供在本发明的一个方面中的抗反射硬掩模组​​合物，并提供另一方面的半导体器件的处理方法。 解决方案：组合物含有完全缩合的多面体寡聚倍半硅氧烷，其中n等于8; 和至少一个发色团部分和透明部分。 该方法包括以下步骤：在衬底上提供材料层; 以及在所述材料层上形成抗反射硬掩模层。 抗反射硬掩模层包括完全冷凝的多面体低聚倍半硅氧烷，其中n等于8; 和至少一个发色团部分和透明部分。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005115380A

公开(公告)日：2005-04-28

申请号：JP2004291846

申请日：2004-10-04

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ANGELOPOULOS MARIE ,  HUANG WU-SONG ,  MAHOROWALA ARPAN P ,  MOREAU WAYNE ,  PFEIFFER DIRK ,  RATONAMU SOORIYAKUMARAN

IPC: G03F7/11 ,  G03F1/00 ,  G03F7/00 ,  G03F7/004 ,  G03F7/075 ,  G03F7/09 ,  G03F7/20 ,  H01L21/027

CPC classification number: G03F7/0754 ,  G03F7/0045 ,  G03F7/091 ,  Y10S430/106 ,  Y10S430/115

Abstract: PROBLEM TO BE SOLVED: To provide a new and improved polymer composition which can be used for photolithography and has similar etching properties to those of Si.
SOLUTION: An antireflection composition characterized in the presence of a Si-containing polymer having a pendant chromophore moiety is regarded as an antireflection coating/hard mask composition useful in lithographic processes. The composition provides significant optical characteristics, mechanical properties and etching selectivity and is applicable by a spin-on coating method. The composition is particularly useful in lithographic processes used to configure an underlay material layer on a substrate, in particular, a metal layer or a semiconductor layer.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供可用于光刻的新的和改进的聚合物组合物，并具有与Si相似的蚀刻性能。 解决方案：特征在于存在具有侧发色团部分的含Si聚合物的抗反射组合物被认为是可用于光刻工艺的抗反射涂层/硬掩模组合物。 该组合物提供显着的光学特性，机械性能和蚀刻选择性，并且可以通过旋涂法来应用。 该组合物在用于在衬底，特别是金属层或半导体层上构造衬底材料层的光刻工艺中特别有用。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005070776A

公开(公告)日：2005-03-17

申请号：JP2004237692

申请日：2004-08-17

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： BABICH KATHERINA ,  HUANG ELBERT ,  MAHOROWALA ARPAN P ,  MEDEIROS DAVID R ,  PFEIFFER DIRK ,  TEMPLE KAREN

IPC: G03F7/11 ,  G03F7/00 ,  G03F7/004 ,  G03F7/075 ,  G03F7/09 ,  H01L21/027 ,  H01L21/32 ,  H01L21/3205 ,  H01L21/3213

CPC classification number: G03F7/091 ,  G03F7/0045 ,  G03F7/0757 ,  H01L21/0274 ,  H01L21/32139 ,  Y10S430/106 ,  Y10S430/115 ,  Y10S430/143 ,  Y10S430/151

Abstract: PROBLEM TO BE SOLVED: To provide an antireflective hardmask composition and a method for using the antireflective hardmask composition for processing a semiconductor device.
SOLUTION: The antireflective hardmask composition for lithography is obtained. The antireflective hardmask composition contains a carbosilane polymer backbone comprising at least one kind of chromophore moiety and at least one kind of transparent moiety and a crosslinking component. The method for processing a semiconductor device is provided. The method comprises steps of: providing a material layer on a substrate; and forming an antireflective hardmask layer over the material layer. The antireflective hardmask layer contains a carbosilane polymer backbone comprising at least one kind of chromophore moiety and at least one kind of transparent moiety and a crosslinking component.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种抗反射硬掩模组​​合物和使用用于加工半导体器件的抗反射硬掩模组​​合物的方法。 解决方案：获得用于光刻的抗反射硬掩模组​​合物。 防反射硬质组合物含有包含至少一种发色团部分和至少一种透明部分和交联组分的碳硅烷聚合物主链。 提供了一种用于处理半导体器件的方法。 该方法包括以下步骤：在衬底上提供材料层; 以及在所述材料层上形成抗反射硬掩模层。 抗反射硬掩模层包含含有至少一种发色团部分和至少一种透明部分和交联组分的碳硅烷聚合物主链。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005352107A

公开(公告)日：2005-12-22

申请号：JP2004172270

申请日：2004-06-10

Applicant: Internatl Business Mach Corp ,  Shin Etsu Chem Co Ltd ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation ,  信越化学工業株式会社

Inventor： HAMADA YOSHITAKA ,  OGIWARA TSUTOMU ,  IWABUCHI MOTOAKI ,  ASANO TAKESHI ,  UEDA TAKASHI ,  PFEIFFER DIRK

IPC: G03F7/11 ,  B44C1/22 ,  G03F1/00 ,  G03F7/075 ,  G03F7/09 ,  H01L21/027

CPC classification number: G03F7/094 ,  G03F7/0752 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76808

Abstract: PROBLEM TO BE SOLVED: To obtain a sacrificial film excellent in storage stability, filling property, adhesion and coating film uniformity and having high solubility in a stripping liquid. SOLUTION: A sacrificial film forming composition is used which comprises (A) a silicone resin which is a cohydrolytic condensation product of hydrolyzable silanes shown by the formula (1): X-Y-SiZ 3 and the formula (2) R n SiZ 4-n and is capable of crosslinking reaction through an organic crosslinkable functional group in the formula (1), (B) a crosslinking agent, (C) an acid generator and (D) an organic solvent. In the formula (1), Z denotes a hydrolyzable group; X is an unsubstituted hydroxyl group, a substituted or unsubstituted epoxy group or a substituted or unsubstituted organic crosslinkable functional group; and Y is a single bond, a divalent hydrocarbon group or a trivalent hydrocarbon group in the case of bonding to both two carbons constituting the epoxy group. In the formula (2), Z denotes a hydrolyzable group; R is H or a monovalent hydrocarbon group; and n is an integer of 0-3. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：获得在剥离液中的储存稳定性，填充性，粘附性和涂膜均匀性以及高溶解性优异的牺牲膜。 解决方案：使用牺牲膜形成组合物，其包含（A）由式（1）所示的可水解硅烷的共水解缩合产物的硅氧烷树脂：XY-SiZ 3和/ 通式（2）中R 2具有式（1）中的有机交联性官能团，（B）交联剂， （C）酸产生剂和（D）有机溶剂。 在式（1）中，Z表示可水解基团; X是未取代的羟基，取代或未取代的环氧基或取代或未取代的有机交联官能团; 在与构成环氧基的两个碳结合的情况下，Y为单键，二价烃基或三价烃基。 在式（2）中，Z表示可水解基团; R为H或一价烃基; n为0-3的整数。 版权所有（C）2006，JPO＆NCIPI