Abstract:
In a monolithic semiconductor storage the bit lines are selectively connected in pairs to the inputs of a read amplifier. In their separated state the potentials of the read lines (VB) and of the associated input lines of the read amplifier (VBS1, VBS2) show the same value and are derived from a common potential (VH). Potentials VB as well as VBS1 and VBS2 are derived via the same respective number of diode voltage drops from potential VH.
Abstract:
For each binary position of the coded addresses the selection device shows a phase splitter whose two outputs are connected to associated inputs of decoders. In order to increase the noise resistance jointly clocked AND gates are inserted at the inputs and outputs of the phase splitters, and at the outputs of the decoders. An automatic optimum determination of the conditioning time of the AND gates at the outputs of phase splitters is achieved by a delayed clock pulse DCS1 derived from a clock pulse T of AND gates at the input of the phase splitters. For that purpose, clock pulse T is derived at the output of the AND gates at the input of phase splitters and, via a simulated phase splitter circuit integrated on the chip, is applied as clock pulse DCS1 to the clock inputs of the AND gates at the output of the functional phase splitters. The determination of the conditioning time of AND gates at the output of the decoder is performed accordingly at the output of decoder. In that process, a clock signal is derived from the output of AND gates at the output of phase splitters, and applied as a delayed clock signal DCS2 via a simulation of one of decoders to the clock inputs of the AND gates at the output of the decoders.