公开(公告)号：US3899777A

公开(公告)日：1975-08-12

申请号：US44603374

申请日：1974-02-25

Applicant: IBM

Inventor： FEICHT ERWIN ,  HAUG WERNER OTTO ,  REMSHARDT ROLF ,  SCHETTLER HELMUT

IPC: G11C11/41 ,  G11C11/414 ,  G11C11/419 ,  H03F3/45 ,  G11C7/06

CPC classification number: G11C11/419 ,  H03F3/45479

Abstract: In a monolithic semiconductor storage the bit lines are selectively connected in pairs to the inputs of a read amplifier. In their separated state the potentials of the read lines (VB) and of the associated input lines of the read amplifier (VBS1, VBS2) show the same value and are derived from a common potential (VH). Potentials VB as well as VBS1 and VBS2 are derived via the same respective number of diode voltage drops from potential VH.

Abstract translation: 在单片半导体存储器中，位线被选择性地与读取放大器的输入成对连接。 在分离状态下，读取放大器（VBS1，VBS2）的读取线（VB）和相关输入线的电位显示相同的值，并从公共电位（VH）导出。 电位VB以及VBS1和VBS2是通过从电位VH相同的相应数量的二极管电压降导出的。

公开(公告)号：DE2309186A1

公开(公告)日：1974-09-05

申请号：DE2309186

申请日：1973-02-23

Applicant: IBM DEUTSCHLAND

Inventor： FEICHT ERWIN ,  HAUG WERNER DIPL-ING ,  REMSHARDT ROLF DIPL-ING DR ,  SCHETTLER HELMUT DIPL-ING

IPC: G11C11/41 ,  G11C11/414 ,  G11C11/419 ,  H03F3/45 ,  G11C7/00

Abstract: In a monolithic semiconductor storage the bit lines are selectively connected in pairs to the inputs of a read amplifier. In their separated state the potentials of the read lines (VB) and of the associated input lines of the read amplifier (VBS1, VBS2) show the same value and are derived from a common potential (VH). Potentials VB as well as VBS1 and VBS2 are derived via the same respective number of diode voltage drops from potential VH.