公开(公告)号：DE3162803D1

公开(公告)日：1984-04-26

申请号：DE3162803

申请日：1981-08-04

Applicant: IBM

Inventor： HENDRICKS CHARLES JOSEPH ,  HICKS WILLIAM WALLACE ,  KELLER JOHN HOWARD

IPC: H01L21/302 ,  H01J37/32 ,  H01L21/3065

Abstract: A plasma enhancing baffle plate (41) is employed in conjunction with the anode (3) of a reactive ion etching (RIE) system to provide uniform silicon etching. The baffle plate is conductively coupled to and provided in relatively close proximity to the anode to form a constricted chamber region (43) between anode and baffle plate. With the constricted chamber open to the RIE chamber through aperture means (41) in the baffle plate, the total surface area of the anode is increased, such that when the system is biased to operate in an RIE mode an increase in the generation of neutral etching species is effected. Various aperture arrangements may be employed to provide different patterns of neutral etching species generation, in accordance with the peculiar characteristics of the system employed.

公开(公告)号：DE3568513D1

公开(公告)日：1989-04-06

申请号：DE3568513

申请日：1985-04-17

Applicant: IBM

Inventor： CHEN LEE ,  HENDRICKS CHARLES JOSEPH ,  MATHAD GANGADHARA SWAMI ,  POLONCIC STANLEY JOHN

IPC: H01L21/302 ,  H01J37/32 ,  H01L21/00 ,  H01L21/3065 ,  H01L21/306

公开(公告)号：DE3679854D1

公开(公告)日：1991-07-25

申请号：DE3679854

申请日：1986-04-21

Applicant: IBM

Inventor： DESILETS BRIAN HENRY ,  GUNTHER THOMAS ANTHONY ,  HENDRICKS CHARLES JOSEPH ,  KELLER JOHN HOWARD

IPC: H01L21/302 ,  C23F4/00 ,  H01J37/32 ,  H01L21/3065