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    1.
    发明专利
    未知

    公开(公告)号：DE69411873T2

    公开(公告)日：1999-03-25

    申请号：DE69411873

    申请日：1994-11-24

    Applicant: IBM

    Inventor： BARNES MICHAEL SCOTT ,  KELLER JOHN HOWARD ,  LOGAN JOSEPH S ,  TOMPKINS ROBERT E ,  WESTERFIELD ROBERT PETER

    IPC: B23Q3/15 ,  H01L21/683 ,  H02N13/00 ,  H01L21/00

    Abstract: An electrostatic chuck has its electrodes biased with respect to the self-bias potential induced by the plasma on the wafer, thereby providing improved resistance to breakdown in spite of variation of the wafer potential during processing, further suppressing the formation of vacuum arcs between the back of the wafer being processed and the body of the chuck by the interposition of a conductive guard ring at the self-bias potential, thereby defining an equipotential area between the closest electrode and the wafer.

    3.
    发明专利
    未知

    公开(公告)号：DK153613C

    公开(公告)日：1988-12-12

    申请号：DK194178

    申请日：1978-05-03

    Applicant: IBM

    Inventor： FORNERIS JOHN LAWRENCE ,  HICKS WILLIAM WALLACE ,  KELLER JOHN HOWARD ,  MCKENNA CHARLES MICHAEL ,  SEIRMARCO JAMES ANTHONY

    IPC: H01J37/20 ,  G01Q60/00 ,  H01J37/02 ,  H01J37/244 ,  H01J37/317 ,  H01L21/265

    Abstract: In an ion beam apparatus a structure for controlling the surface potential of the target comprising an electron source adjacent to the beam for providing electrons to the beam and means between the target and source for inhibiting rectilinear radiations, i.e., electron and other particle and photon radiations between said source and said target. This prevents heating of the target by the electron source and cross-contamination between the source and the target. A further structure is provided for the measurement of the ion beam current while controlling said surface potential of the target which includes: walls adjacent to and electrically insulated from the target and surrounding the beam whereby the walls and target provide a Faraday Cage, means for introducing variable quantities of electrons into the beam within the Faraday Cage, means for measuring the target current, means for combining and measuring the target and wall currents to provide said ion beam current measurement and means for varying the quantities of introduced electrons to control the target current and thereby the target surface potential.

    4.
    发明专利
    未知

    公开(公告)号：DE69416288T2

    公开(公告)日：1999-08-19

    申请号：DE69416288

    申请日：1994-11-08

    Applicant: IBM

    Inventor： BARNES MICHAEL SCOTT ,  KELLER JOHN HOWARD ,  LOGAN JOSEPH SKINNER ,  RUCKEL RAYMOND ROBERT ,  TOMPKINS ROBERT ELI ,  WESTERFIELD JR ROBERT PETER

    IPC: B23Q3/15 ,  H01L21/00 ,  H01L21/683 ,  H02N13/00

    Abstract: An electrostatic chuck is made by a method in which the component parts are machined, then anodized to provide a hard insulating surface, and then assembled in a fixture, to provide a planar surface for wafer support that retains superior insulating properties; gas may be fed from the rim only, diffusing within interstices between the clamping surface and the wafer and maintaining a desired pressure by flowing radially through an impedance determined by the average spacing between clamping surface and wafer, thereby providing uniform pressure across the clamping surface without the use of elastomeric seals.

    5.
    发明专利
    未知

    公开(公告)号：DE69411873D1

    公开(公告)日：1998-08-27

    申请号：DE69411873

    申请日：1994-11-24

    Applicant: IBM

    Inventor： BARNES MICHAEL SCOTT ,  KELLER JOHN HOWARD ,  LOGAN JOSEPH S ,  TOMPKINS ROBERT E ,  WESTERFIELD ROBERT PETER

    IPC: B23Q3/15 ,  H01L21/683 ,  H02N13/00 ,  H01L21/00

    Abstract: An electrostatic chuck has its electrodes biased with respect to the self-bias potential induced by the plasma on the wafer, thereby providing improved resistance to breakdown in spite of variation of the wafer potential during processing, further suppressing the formation of vacuum arcs between the back of the wafer being processed and the body of the chuck by the interposition of a conductive guard ring at the self-bias potential, thereby defining an equipotential area between the closest electrode and the wafer.

    8.
    发明专利
    未知

    公开(公告)号：DE3879418T2

    公开(公告)日：1993-09-23

    申请号：DE3879418

    申请日：1988-10-25

    Applicant: IBM

    Inventor： KELLER JOHN HOWARD ,  SELWYN GARY STEWART ,  SINGH JOYTHI

    IPC: H01L21/302 ,  H01J37/32 ,  H01L21/3065

    Abstract: A plasma processing apparatus and process endpoint detection method comprising a plasma chamber for processing an item that has a first portion of a first material and a second portion of a second material, with the first and second materials having different work functions, and means for generating a plasma in the plasma chamber, with the plasma generating means including at least a pair of RF-power electrodes with one of them being excited by an RF excitation frequency. The apparatus further includes means for generating and ejecting electrons from said second material only when the second material is exposed to the plasma, and means for increasing the energies of these generated electrons and accelerating these electrons into the etching plasma with sufficient energy to generate secondary electrons in the plasma. The apparatus further includes means for receiving a plasma discharge voltage signal, means for filtering the discharge electrical voltage signal to remove the RF excitation frequency and any DC components therein, and means for amplifying the natural frequencies of excitation and decay of the plasma discharge voltage perturbation signal, to thereby detect the processing endpoint. In a preferred embodiment, the electron energy increasing and accelerating means comprises means for generating an electrode voltage sheath, and means for generating the electrons within this voltage sheath to thereby accelerate the electrons into the plasma. The electron generating means comprises means for directing a beam of photons in a selected energy range onto the item to be processed, which energy range is not sufficient to eject photoelectrons from the first material, but is high enough to generate photoelectrons from areas of exposed second material.

    10.
    发明专利
    未知

    公开(公告)号：BR8806481A

    公开(公告)日：1989-08-22

    申请号：BR8806481

    申请日：1988-12-08

    Applicant: IBM

    Inventor： KELLER JOHN HOWARD ,  SELWYN GARY STEWART ,  SINGH JOYTHI

    IPC: H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H05H1/24

    Abstract: A plasma processing apparatus and process endpoint detection method comprising a plasma chamber for processing an item that has a first portion of a first material and a second portion of a second material, with the first and second materials having different work functions, and means for generating a plasma in the plasma chamber, with the plasma generating means including at least a pair of RF-power electrodes with one of them being excited by an RF excitation frequency. The apparatus further includes means for generating and ejecting electrons from said second material only when the second material is exposed to the plasma, and means for increasing the energies of these generated electrons and accelerating these electrons into the etching plasma with sufficient energy to generate secondary electrons in the plasma. The apparatus further includes means for receiving a plasma discharge voltage signal, means for filtering the discharge electrical voltage signal to remove the RF excitation frequency and any DC components therein, and means for amplifying the natural frequencies of excitation and decay of the plasma discharge voltage perturbation signal, to thereby detect the processing endpoint. In a preferred embodiment, the electron energy increasing and accelerating means comprises means for generating an electrode voltage sheath, and means for generating the electrons within this voltage sheath to thereby accelerate the electrons into the plasma. The electron generating means comprises means for directing a beam of photons in a selected energy range onto the item to be processed, which energy range is not sufficient to eject photoelectrons from the first material, but is high enough to generate photoelectrons from areas of exposed second material.

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