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公开(公告)号:JP2000241827A
公开(公告)日:2000-09-08
申请号:JP3687899
申请日:1999-02-16
Applicant: IBM
Inventor: TERUKINA ASAO , IKEZAKI MITSURU , IIYORI HIDEO , HAYASHI KATSURO , FUJII YOSHIHARU , KURIHARA MIKIO , KIYOOKA FUMITOSHI
IPC: G09F9/00 , G02F1/13 , G02F1/1345
Abstract: PROBLEM TO BE SOLVED: To provide a liquid crystal display device having a COG (chip on glass) structure in which the width of the frame can be effectively decreased even in the COG structure. SOLUTION: In the liquid crystal display device having a COG structure, a common wiring 11 to connect plural chips 3 and a flexible printed circuit board(FPC) 8 are formed on a glass substrate 1. Pins 4-2 of the chips 3 to connect with the FPC and the common wiring 11 are connected on the glass substrate 1. The common wiring 11 and the FPC 8 are connected by using connecting terminals 7-1, 7-2 for the FPC which are disposed at least in one point on the common wiring 11.
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公开(公告)号:JP2002040481A
公开(公告)日:2002-02-06
申请号:JP2000222318
申请日:2000-07-24
Applicant: IBM
Inventor: TAKASUGI CHIKATOMO , IIYORI HIDEO
IPC: G02F1/1343 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/00 , G09F9/30 , H01L29/786
Abstract: PROBLEM TO BE SOLVED: To obtain a liquid crystal display device which can prevent wires from short-circuiting to each other. SOLUTION: A TFT(Thin Film Transistor) array substrate has a dummy signal line 36 as a short-circuit wire so as to prevent a short circuit due to electrostatic destruction to a gate line as a low-layer wire. The dummy signal line 36 is formed in the outer peripheral area 32 of the TFT array substrate. This dummy signal line 36 has a three-layered structure of a silicon lower layer, an ITO(Indium Tin Oxide) intermediate layer, and an aluminum(Al) upper layer from below. The silicon layer formed as one continuous wire as well as the Al layer are etched simultaneously when the Al layer is patterned, so that the silicon layer is electrically broken between gate lines. The dummy wire is broken after formed, so even if the dummy wire and >=2 gate lines are short-circuited, there is no short circuit between the gate lines.
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公开(公告)号:JPH04150010A
公开(公告)日:1992-05-22
申请号:JP26660690
申请日:1990-10-05
Applicant: IBM
Inventor: IIYORI HIDEO , TAKAYAMA SHINJI
Abstract: PURPOSE: To enable high-density recording while enlarging a magneto-optical effect, even on the short wavelength side and inducing magnetization vertically with respect to a film surface by sequentially laminating 1st, 2nd and 3rd magnetic layers of rare earth element-transition metal non-crystal film, having prescribed thickness from the light incident side. CONSTITUTION: 1st, 2nd and 3rd magnetic layers 1, 2 and 3 of rare earth element-transition metal non-crystal film are sequentially formed on a glass substrate 4. At such a time, the thickness of 1st and 2nd layers 1 and 2 is 1-20nm, the thickness of the 3rd layer 3 is 2nm or more. Further, the 2nd layer is expressed by the composition formula of (A1-a Ba )x (Fe1-b Cob )y Tz . Here, A is an element at least selected from among an element group composed of Nd and Gd, B is an element selected from among an element group composed of Tb, Dy and Gd, T is an element at least selected from among a transition metal element group for improving corrosion resistance, and the conditions of 0
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公开(公告)号:DE69115426D1
公开(公告)日:1996-01-25
申请号:DE69115426
申请日:1991-09-24
Applicant: IBM
Inventor: IIYORI HIDEO , TAKAYAMA SHINJI
Abstract: A magneto-optical medium (1) comprises first, second and third layers. The first layer has a thickness of not less than 1 nm and not more than 20 nm and is in the form of a rare earth-transition metal amorphous film including at least one rare earth element selected from a group consisting of Tb, Dy, and Gd and including at least one transition metal element selected from a group consisting of Fe and Co. The lecond layer (2) has a thickness of not less than 1 nm and not more than 20 nm and is in the form of either a rare earth-transition metal amorphous film including at least one rare earth element selected from a group consisting of ND and Pr and including at least one transition metal element selected from a group consisting of Fe and Co, or a crystalline film including at least one element selected from a group consisting of Fe and Co. The third layer (3) has a thickness of not less than 2 nm and is in the form of a rare earth-transition metal amorphous film including at least one rare earth element selected from a group consisting of Tb, Dy, and Gd and including at least one transition metal element selected from a group consisting of Fe and Co. The layers are laminated suceessively, with the second layer disposed between the first and third layers and with the first layer being the first to be penetrated by light. The medium has an advantageously large magneto-optical effect even at short wavelengths, reorients the magnetization in a direction perpendicular to the film surface, and permits high-density recording.
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公开(公告)号:MY131057A
公开(公告)日:2007-07-31
申请号:MYPI9101732
申请日:1991-09-25
Applicant: IBM
Inventor: IIYORI HIDEO , TAKAYAMA SHINJI
Abstract: MAGNETO-OPTICAL RECORDING MEDIA WITH HIGH KERR ROTATION AT SHORT WAVELENGTH HAVE BEEN INVENTED IN THE FORM OF THE TRIPLE-LAYERED STRUCTURE. FILMS WITH HIGH KERR ROTATION AT SHORT WAVELENGTH, BUT IN-PLANE ANISOTROPY, HAVE TO BE SANDWICHED BETWEEN (Tb, Dy) - (Fe, Co) AMORPHOUS FILMS WITH HIGH PERPENDICULAR ANISOTROPY. FURTHERMORE, IT HAS BEEN FOUND THAT THE THICKNESS FOR EACH LAYER IS CRITICAL. THE FIRST LAYER, WHICH A LASER BEAM PENETRATES FIRST, SHOULD BE THIN ENOUGH FOR THE LASER BEAM TO PENETRATE, BUT THICK ENOUGH TO GIVE STRONG EXCHANGE COUPLING TO THE SECOND LAYER. THE SECOND LAYER SHOULD BE THIN ENOUGH TO RECEIVE A STRONG EXCHANGE COUPLING FROM BOTH SIDE FILMS, BUT THICK ENOUGH TO GIVE HIGH KERR ROTATION. THE THIRD LAYER SHOULD BE THICK ENOUGH TO GIVE A STRONG EXCHANGE COUPLING TO THE SECOND LAYER. BY THIS TRIPLE-LAYERED APPROACH, THE INVENTORS HAVE SUCCEEDED IN MAKING FUTURE MAGNETO-OPTICAL MEDIA SUITABLE FOR HIGH RECORDING DENSITY.(FIG. 1)
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公开(公告)号:CA2051603C
公开(公告)日:1995-09-12
申请号:CA2051603
申请日:1991-09-17
Applicant: IBM
Inventor: IIYORI HIDEO , TAKAYAMA SHINJI
Abstract: A magneto-optical recording media is disclosed with high kerr rotation angle at short wavelengths in the form of a triple-layered structure. A film with a high Kerr rotation angle at a short wavelength is sandwiched between magneto-optical recording films with a high perpendicular magnetic anisotropy. The respective thickness of each layer is optimized to produce a triple-layered structure suitable for high recording density magneto-optical media.
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公开(公告)号:CA2051603A1
公开(公告)日:1992-04-06
申请号:CA2051603
申请日:1991-09-17
Applicant: IBM
Inventor: IIYORI HIDEO , TAKAYAMA SHINJI
Abstract: A magneto-optical medium (1) comprises first, second and third layers. The first layer has a thickness of not less than 1 nm and not more than 20 nm and is in the form of a rare earth-transition metal amorphous film including at least one rare earth element selected from a group consisting of Tb, Dy, and Gd and including at least one transition metal element selected from a group consisting of Fe and Co. The lecond layer (2) has a thickness of not less than 1 nm and not more than 20 nm and is in the form of either a rare earth-transition metal amorphous film including at least one rare earth element selected from a group consisting of ND and Pr and including at least one transition metal element selected from a group consisting of Fe and Co, or a crystalline film including at least one element selected from a group consisting of Fe and Co. The third layer (3) has a thickness of not less than 2 nm and is in the form of a rare earth-transition metal amorphous film including at least one rare earth element selected from a group consisting of Tb, Dy, and Gd and including at least one transition metal element selected from a group consisting of Fe and Co. The layers are laminated suceessively, with the second layer disposed between the first and third layers and with the first layer being the first to be penetrated by light. The medium has an advantageously large magneto-optical effect even at short wavelengths, reorients the magnetization in a direction perpendicular to the film surface, and permits high-density recording.
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