公开(公告)号：SG100658A1

公开(公告)日：2003-12-26

申请号：SG200101933

申请日：2001-03-26

Applicant: IBM

Inventor： ARNE W BALLANTINE ,  JOHN J ELLIS-MONAGHAN ,  TOSHIHARU FURUKAWA ,  GLENN R MILLER ,  JAMES ALBERT SLINKMAN ,  JEFFERY D GILBERT

IPC: H01L21/22 ,  C21D1/04 ,  H01L21/225 ,  H01L21/26 ,  H01L21/265 ,  H01L21/324 ,  H01L21/326 ,  H01L21/00

Abstract: A method for forming a desired junction profile in a semiconductor device. At least one dopant is introduced into a semiconductor substrate. The at least one dopant is diffused in the semiconductor substrate through annealing the semiconductor substrate and the at least one dopant while simultaneously exposing the semiconductor substrate to an electric field.