CHEMICAL MECHANICAL POLISHING PROCESS METHOD

    公开(公告)号:JP2001077067A

    公开(公告)日:2001-03-23

    申请号:JP22834999

    申请日:1999-08-12

    Applicant: IBM SIEMENS AG

    Abstract: PROBLEM TO BE SOLVED: To enable a metal chemical mechanical polishing process to be quickly controlled in performance by a method wherein an indicator region on a wafer is checked, and a chemical mechanical polishing machine is regulated in operation corresponding to a check result. SOLUTION: An indicator region is capable of containing a macro block composed of a large number of blocks. In the above indicator region, a maximum line width is 20 μm at a given mask level, and a 90% maximum pattern factor is possible. A wafer is completely dished out through this preferable arrangement or checked by discriminating a block which partially becomes zero in thickness. A block 86 which is completely dished out is distinguished from not only a block 91 where a dish liner is not exposed but also a block 90 which is partially dished. A chemical mechanical polishing machine is controlled in operation corresponding to the check result.

    CHEMICAL MECHANICAL POLISHING DEVICE

    公开(公告)号:JP2001127025A

    公开(公告)日:2001-05-11

    申请号:JP2000273239

    申请日:2000-09-08

    Applicant: IBM

    Abstract: PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing(CMP) control system for controlling pressure distribution on the back face of a semiconductor wafer to be polished. SOLUTION: This system is provided with a CMP device having a carrier 14 for supporting a semiconductor wafer. The carrier 14 is provided with plural two-way function piezoelectric actuators 41 and 42. The actuators 41 and 42 detect pressure change across the semiconductor wafer, and the actuators 41 and 42 can be individually controlled. A controller connected with the actuators 41 and 42 control the actuators 41 and 42 to apply pressure distribution controlled across the semiconductor wafer by monitoring the detected pressure change.

    PIEZO-ACTUATED CMP CARRIER
    3.
    发明专利

    公开(公告)号:SG87156A1

    公开(公告)日:2002-03-19

    申请号:SG200004528

    申请日:2000-08-16

    Applicant: IBM

    Abstract: A chemical-mechanical polishing (CMP) control system controls distribution of pressure across the backside of a semiconductor wafer being polished. The system includes a CMP apparatus having a carrier for supporting a semiconductor wafer. The carrier includes a plurality of dual function piezoelectric actuators. The actuators sense pressure variations across the semiconductor wafer and are individually controllable. A control is connected to the actuators for monitoring sensed pressure variations and controlling the actuators to provide a controlled pressure distribution across the semiconductor wafer.

Patent Agency Ranking