公开(公告)号：DE3161411D1

公开(公告)日：1983-12-22

申请号：DE3161411

申请日：1981-04-10

Applicant: IBM

Inventor： CORCORAN RICHARD ALAN ,  KEENAN WILLIAM ANDREW ,  MICHAELIDES DEMETRIOS ,  YUN BOB HONG

IPC: G01N27/00 ,  G01N27/04 ,  G01R31/26 ,  H01L21/66

公开(公告)号：DE2646300A1

公开(公告)日：1977-05-05

申请号：DE2646300

申请日：1976-10-14

Applicant: IBM

Inventor： KEENAN WILLIAM ANDREW ,  KROLL CHARLES THOMAS

IPC: H01L21/265 ,  H01L21/266 ,  H01L21/318 ,  H01L21/425 ,  H01L21/471

Abstract: The disclosure teaches the use of aluminum nitride as a mask for utilization of ion implantation in the formation of semiconductor configurations as well as an underlying material for use in semiconductor lift-off techniques in device formation and the deposition of metallization contact lines and interconnections.

公开(公告)号：DE2330515A1

公开(公告)日：1974-01-31

申请号：DE2330515

申请日：1973-06-15

Applicant: IBM

Inventor： KEENAN WILLIAM ANDREW ,  POPONIAK MICHAEL ROBERT ,  YEH TSU-HSING

IPC: H01L21/66 ,  G01N21/95 ,  G01R31/265 ,  G01R31/26

Abstract: An apparatus for detecting the presence of inclusions in semiconductor material having a polychromatic light source, a support for a semiconductor body, a light sensing means positioned to operate on light transmitted through the body from the light source, the sensing means including a substrate of the same type of semiconductor materials as the material of the semiconductor body, and having at least a PN junction in the substrate with means to backbias the junction, a means to indicate the relative amounts of light transmitted through the semiconductor body that is sensed by the sensing means.