公开(公告)号：GB2494231B

公开(公告)日：2016-05-04

申请号：GB201208932

申请日：2012-05-21

Applicant: IBM

Inventor： JENG-BANG YAU ,  MICHAEL GORDON ,  KENNETH PARKER RODBELL

IPC: H01L31/119 ,  H01L21/265 ,  H01L21/3115 ,  H01L21/74 ,  H01L21/762 ,  H01L21/84 ,  H01L27/12

Abstract: A semiconductor device includes a first field effect transistor (FET) located on a substrate; and a second FET located on the substrate, the second FET comprising a first buried oxide (BOX) region located underneath a channel region of the second FET, wherein the first BOX region of the second FET is configured to cause the second FET to have a higher radiation sensitivity that the first FET.

公开(公告)号：GB2599523B

公开(公告)日：2022-12-28

申请号：GB202117805

申请日：2020-04-06

Applicant: IBM

Inventor： ALEXANDER REZNICEK ,  JENG-BANG YAU ,  BAHMAN HEKMATSHOARTABARI

IPC: G01N27/414 ,  H01L29/73

Abstract: A biosensor includes a bulk silicon substrate and a vertical bipolar junction transistor (BJT) formed on at least a portion of the substrate. The BJT includes an emitter region, a collector region and an epitaxially grown intrinsic base region between the emitter and collector regions. The biosensor further includes a sensing structure formed on at least a portion of two vertical surfaces of the intrinsic base region of the BJT. The sensing structure includes a channel/trench opening, exposing the intrinsic base region on at least first and second opposing sides thereof, and at least one dielectric layer formed in the channel/trench opening and contacting at least a portion of the intrinsic base region, the dielectric layer being configured to respond to charges in biological molecules.

公开(公告)号：GB2543420B

公开(公告)日：2020-01-01

申请号：GB201616634

申请日：2016-09-30

Applicant: IBM

Inventor： KENNETH PARKER RODBELL ,  MICHAEL GORDON ,  JENG-BANG YAU ,  TAK HUNG NING

IPC: H01L31/115 ,  G01T1/02 ,  H01L27/12 ,  H01L29/735 ,  H01L31/11 ,  H01L31/18

Abstract: An integrated radiation sensor for detecting the presence of an environmental material and/or condition includes a sensing structure and first and second lateral bipolar junction transistors (BJTs) having opposite polarities. The first lateral BJT has a base that is electrically coupled to the sensing structure and is configured to generate an output signal indicative of a change in stored charge in the sensing structure. The second lateral BJT is configured to amplify the output signal of the first bipolar junction transistor. The first and second lateral BJTs, the sensing structure, and the substrate on which they are formed comprise a monolithic structure.

公开(公告)号：GB2600623A

公开(公告)日：2022-05-04

申请号：GB202201520

申请日：2020-06-17

Applicant: IBM

Inventor： ERIC PETER LEWANDOWSKI ,  JAE-WOONG NAH ,  JENG-BANG YAU ,  PETER JEROME SORCE

IPC: H01L21/60 ,  H01L23/485 ,  H01L23/498 ,  H01L27/18

Abstract: A method for forming a solder bump (122) includes preparing a transfer mold (100) having a solder pillar (112) extending from a mold substrate (102) and through a first photoresist layer (104) and having a shape partially defined by a second photoresist layer (108) that is removed prior to transfer of the solder; providing a device substrate (114) having a wettable pad (120); placing the transfer mold (100) and the device substrate (114) into aligned contact such that the solder pillar (112) is in contact with the wettable pad (120); forming a metallic bond between the solder pillar (112) and the wettable pad (120), e.g. by a cold welding process or a reflow process; and removing the mold substrate (102) and the first photoresist layer (104). The mold substrate (102) and the transfer mold (100) may be flexible. The transfer mold may comprise at least one of: a wetting layer over the mold substrate (402), in which case a pillar (112) including aluminum may be deposited and reflowed; a seed layer over the mold substrate (402); and a non-wetting layer over the second photoresist layer (408). The device substrate (114, 502) may comprise a through hole (118, 504) and may be an interposer made of silicon, glass and/or organic substrate material. The method may further comprise attaching the interposer (114, 502) to a qubit semiconductor device (a superconducting chip) (300, 516), wherein the qubit semiconductor device (300, 516) comprises a Josephson junction (304, 518), and wherein the attaching of the interposer (114, 502) to the qubit semiconductor device (300, 516) includes aligning the hole (118, 504) through the interposer (114, 502) with the Josephson junction (304, 518) to provide a path for accessing the Josephson junction (304, 518), in particular to make adjustments to its design frequency. The solder pillar (122) may be one of a plurality of solder pillars that are formed around the hole (118) between the qubit semiconductor device (300) and the interposer (114) for providing an amount of thermal isolation of the Josephson junction (304), forming a circular wall (200A, 200B) around the qubits and between the interposer (114) and the superconducting chip (300), wherein the circular wall (200A, 200B) may include at least one gap (202) therethrough. The solder pillar (512) may be one of a plurality of solder pillars (512) of the transfer mold, including a first solder pillar (512) having a first diameter and a second solder pillar (512) having a second diameter, the first diameter being larger than the second diameter. The device substrate (602) may comprise a semiconductor substrate comprising a deep recess (604), wherein a circuit component (608) may be comprised in the deep recess (604). The preparing of the transfer mold (100) may comprise: patterning the first and second photoresist layers (104, 108) to define a recess (110) that extends through the first and second photoresist layers (104, 108); and using injection molded soldering (IMS) to fill the recess (110) with solder to form the solder pillar (112). Alternatively, the preparing of the transfer mold may comprise: patterning the first and second photoresist layers (404, 408) to define a recess (410) that extends through the first and second photoresist layers (404, 408); forming a seed layer, wherein at least a portion of the seed layer is provided in the recess (410); and using electroplating to fill the recess (410) with solder and form the solder pillar. The pillars (112) may also be 3-D metal posts formed by copper plating or copper stud bumps.

公开(公告)号：GB2543420A

公开(公告)日：2017-04-19

申请号：GB201616634

申请日：2016-09-30

Applicant: IBM

Inventor： KENNETH PARKER RODBELL ,  MICHAEL GORDON ,  JENG-BANG YAU ,  TAK HUNG NING

IPC: H01L31/115 ,  G01T1/02 ,  H01L27/12 ,  H01L29/735 ,  H01L31/11 ,  H01L31/18

Abstract: A monolithic integrated radiation sensor or dosimeter (and manufacturing method) to detect environmental radiation (e.g ionizing radiation, neutrons) includes a sensing structure (e.g SOI insulating buried oxide layer, BOX 22) and first and second lateral bipolar junction transistors (BJT, LBJT) of opposite polarity (i.e NPN and PNP BJT devices). The first lateral BJT 30 (Q1) acts as the radiation sensor; its base 33 electrically coupled to the sensing structure 22 (e.g BOX 22 or upper oxide 132 fig 5) and produces an output signal as the stored charge changes within sensing structure. The second lateral BJT acts as an amplifier whilst the polarity is such that the ionizing effect is minimized. At least one of the lateral BJTs has an inverted (base) configuration (122 fig 2). The base of the second LBJT amplifier is electrically connected to an output of the first sensing lateral BJT (e.g base/collector). The doping concentration of the base of the second LBJT is higher (e.g by a factor of ten) than that of the base. The output of the first sensing BJT is configured to pass current directly into the base of the second lateral BJT, and the output (collector) of the second BJT corresponds to the output of the second amplifying BJT device. The integrated radiation sensor may include a neutron conversion layer within the buried oxide layer or an oxide layer on top of the LBJT sensor base.

公开(公告)号：IL298457A

公开(公告)日：2023-01-01

申请号：IL29845722

申请日：2022-11-21

Applicant: IBM CORP ,  ERIC PETER LEWANDOWSKI ,  JENG BANG YAU ,  ERIC ZHANG ,  BUCKNELL C WEBB

Inventor： ERIC PETER LEWANDOWSKI ,  JENG-BANG YAU ,  ERIC ZHANG ,  BUCKNELL C WEBB

IPC: G06N10/40

Abstract: Techniques regarding selectively tuning the operating frequency of superconducting Josephson junction resonators are provided. For example, one or more embodiments described herein can comprise a method that can include chemically altering a Josephson junction of a Josephson junction resonator via a plasma treatment. The method can also comprise selectively tuning an operating frequency of the Josephson junction resonator based on a property of the plasma treatment.

公开(公告)号：GB2599523A

公开(公告)日：2022-04-06

申请号：GB202117805

申请日：2020-04-06

Applicant: IBM

Inventor： ALEXANDER REZNICEK ,  JENG-BANG YAU ,  BAHMAN HEKMATSHOARTABARI

IPC: G01N27/414 ,  H01L29/73

Abstract: A biosensor includes a bulk silicon substrate and a vertical bipolar junction transistor (BJT) formed on at least a portion of the substrate. The BJT includes an emitter region, a collector region and an epitaxially grown intrinsic base region between the emitter and collector regions. The biosensor further includes a sensing structure formed on at least a portion of two vertical surfaces of the intrinsic base region of the BJT. The sensing structure includes a channel/trench opening, exposing the intrinsic base region on at least first and second opposing sides thereof, and at least one dielectric layer formed in the channel/trench opening and contacting at least a portion of the intrinsic base region, the dielectric layer being configured to respond to charges in biological molecules.