公开(公告)号：EP2047506A4

公开(公告)日：2012-04-25

申请号：EP07783916

申请日：2007-05-18

Applicant: IBM

Inventor： STANDAERT THEODORUS E ,  DAVIS PEGEEN M ,  FITZSIMMONS JOHN A ,  GRECO STEPHEN E ,  KO TZE-MAN ,  LUSTIG NAFTALI E ,  NICHOLSON LEE M ,  SANKARAN SUJATHA

IPC: H01L21/4763 ,  H01L21/768

CPC classification number: H01L21/76808 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76846 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：WO2008016740A3

公开(公告)日：2008-06-26

申请号：PCT/US2007069219

申请日：2007-05-18

Applicant: IBM ,  STANDAERT THEODORUS E ,  DAVIS PEGEEN M ,  FITZSIMMONS JOHN A ,  GRECO STEPHEN E ,  KO TZE-MAN ,  LUSTIG NAFTALI E ,  NICHOLSON LEE M ,  SANKARAN SUJATHA

Inventor： STANDAERT THEODORUS E ,  DAVIS PEGEEN M ,  FITZSIMMONS JOHN A ,  GRECO STEPHEN E ,  KO TZE-MAN ,  LUSTIG NAFTALI E ,  NICHOLSON LEE M ,  SANKARAN SUJATHA

IPC: H01L21/4763

CPC classification number: H01L21/76808 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76846 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming an interconnect structure in an inter-layer dielectric (ILD) material, the method include the steps of creating one or more via openings in the ILD material; forming a first liner covering at least one of the one or more via openings; creating one or more trench openings on top of at least one of the one or more via openings covered by the first liner; and forming a second liner covering the trenching openings and at least part of the first liner. An interconnect structure formed by the method is also provided.

Abstract translation: 一种在层间电介质（ILD）材料中形成互连结构的方法，所述方法包括以下步骤：在所述ILD材料中形成一个或多个通孔开口; 形成覆盖所述一个或多个通孔开口中的至少一个的第一衬里; 在由所述第一衬里覆盖的所述一个或多个通孔开口中的至少一个的顶部上创建一个或多个沟槽开口; 以及形成覆盖沟槽开口和第一衬里的至少一部分的第二衬里。 还提供了由该方法形成的互连结构。