公开(公告)号：AU2003273924A1

公开(公告)日：2004-04-19

申请号：AU2003273924

申请日：2003-08-28

Applicant: IBM

Inventor： VARANASI PUSHKARA RAO ,  NISHIMURA YUKIO ,  KOBAYASHI EIICHI ,  KHOJASTEH MAHMOUD M ,  CHEN KUANG-JUNG

IPC: G03F7/039

Abstract: Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation and/or possibly other radiation and are developable to form resist structures of improved development characteristics and improved etch resistance are enabled by the use of resist compositions containing imaging polymer component comprising an acid-sensitive polymer having a monomeric unit with a pendant group containing a remote acid labile moiety.