公开(公告)号：EP1546813A4

公开(公告)日：2006-08-30

申请号：EP03815294

申请日：2003-09-11

Applicant: IBM

Inventor： KHOJASTEH MAHMOUD M ,  WONG RANEE W ,  CHEN KUANG-JUNG ,  VARANASI PUSHKARA RAO ,  ALLEN ROBERT D ,  BROCK PHILLIP ,  HOULE FRANCES ,  SOORIYAKUMARAN RATNAM

IPC: G03F7/38 ,  G03F7/039 ,  G03F7/075 ,  G03F7/09

CPC classification number: G03F7/094 ,  G03F7/0397 ,  G03F7/0758 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115

Abstract: The silicon-containing resist compositions which have low silicon outgassing and high resolution lithographic performance, especially in bilayer or multilayer lithographic applications using 193 nm or shorter wavelength imaging radiation are enabled by the presence of an imaging polymer having silicon-containing, non-acid-labile pendant groups. The resist compositions of the invention are preferably further characterized by the substantial absence of silicon-containing acid-labile moieties.

公开(公告)号：EP1664923A4

公开(公告)日：2008-08-27

申请号：EP04753854

申请日：2004-06-02

Applicant: IBM

Inventor： LI WENJIE ,  VARANASI PUSHKARA RAO

IPC: G03C1/675 ,  C08F14/18 ,  C08F214/18 ,  G03C1/73 ,  G03C5/00 ,  G03F7/038

CPC classification number: C09D133/14 ,  C08F214/18 ,  C08F220/28 ,  C08F220/38 ,  C08K5/0025 ,  C09D133/16 ,  C09D145/00 ,  G03F7/0046 ,  G03F7/0382 ,  Y10S430/107 ,  Y10S430/108 ,  Y10S430/128

Abstract: A negative resist composition is disclosed, wherein the resist composition includes a polymer having at least one fluorosulfonamide monomer unit having one of the following two formulae: wherein: M is a polymerizable backbone moiety; Z is a linking moiety selected from the group consisting of -C(O)O-, -C(O)-, -OC(O)-, -O-C(O)-C(O)-O-, or alkyl; P is 0 or 1; R 1 is a linear or branched alkyl group of 1 to 20 carbons; R 2 is hydrogen, fluorine, a linear or branched alkyl group of 1 to 6 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 6 carbons; and n is an integer from 1 to 6. A method of forming a patterned material layer on a substrate is also disclosed, wherein the method includes applying the fluorosulfonamide-containing resist composition to the substrate to form a resist layer on the material layer; patternwise exposing the resist layer to imaging radiation; removing portions of the resist layer not exposed to the imaging radiation to create spaces in the resist layer corresponding to the pattern; and removing portions of the material layer at the spaces formed in the resist layer, thereby forming a patterned material layer.

公开(公告)号：EP2212905A4

公开(公告)日：2012-03-07

申请号：EP08852871

申请日：2008-11-11

Applicant: IBM

Inventor： HUANG WU-SONG ,  CHEN KUANG-JUNG ,  VARANASI PUSHKARA RAO ,  LI WAI-KIN

IPC: G03F7/00 ,  G03F7/039 ,  G03F7/40 ,  H01L21/00

CPC classification number: G03F7/0048 ,  G03F7/0035 ,  G03F7/0397 ,  G03F7/40

公开(公告)号：EP1820061A4

公开(公告)日：2010-09-22

申请号：EP05825085

申请日：2005-11-03

Applicant: IBM

Inventor： HUANG WU-SONG ,  BURNS SEAN ,  VARANASI PUSHKARA RAO

IPC: G03F7/11 ,  G03F7/004 ,  G03F7/09

CPC classification number: G03F7/091 ,  G03F7/0046 ,  G03F7/0752 ,  G03F7/2041

公开(公告)号：EP2389359A4

公开(公告)日：2012-06-13

申请号：EP10756762

申请日：2010-03-24

Applicant: IBM

Inventor： HUANG WU-SONG ,  POPOVA IRENE ,  VARANASI PUSHKARA RAO ,  VYKLICKY LIBOR

IPC: C07C409/22 ,  G03C1/00

CPC classification number: C08F212/34 ,  C08F212/32 ,  C08F220/22 ,  C08F220/26 ,  C08F220/28 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/091

公开(公告)号：EP1405140A4

公开(公告)日：2007-12-12

申请号：EP01996218

申请日：2001-12-13

Applicant: IBM

Inventor： LI WENJIE ,  VARANASI PUSHKARA RAO

IPC: C08F222/32 ,  G03F7/039 ,  H01L21/027 ,  G03C1/73 ,  G03F7/004 ,  G03F7/028

CPC classification number: G03F7/0395 ,  G03F7/0397

Abstract: Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation and/or possibly other radiation and are develop able to form resist structures of improved development characteristics and improved etch resistance are enabled by the use of resist compositions containing imaging polymer having a 2-cyano arylic monomer.

公开(公告)号：JP2002091006A

公开(公告)日：2002-03-27

申请号：JP2001239023

申请日：2001-08-07

Applicant: IBM

Inventor： ITO HIROSHI ,  VARANASI PUSHKARA RAO

IPC: G03F7/004 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a resist composition which forms a resist structure having high resolution and excellent in etching resistance by imaging with radiation of 193 nm and development. SOLUTION: The acid catalyst type positive resist composition contains a combination of (a) an imaging polymer containing a monomer selected from the group comprising cycloolefins, acrylates and methacrylates, (b) a radiation sensitive acid generating agent and (c) a bulky anhydride additive. The imaging polymer is preferably a cycloolefin polymer.

公开(公告)号：JP2002062640A

公开(公告)日：2002-02-28

申请号：JP2001238985

申请日：2001-08-07

Applicant: IBM

Inventor： ITO HIROSHI ,  VARANASI PUSHKARA RAO

IPC: C08F232/08 ,  G03F7/004 ,  G03F7/033 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a resist composition which is imaged with 193 nm radiation and developed to form a resist structure having high resolution and excellent etching resistance. SOLUTION: The acid catalyst type positive type resist composition contains a combination of (a) an imaging polymer containing a monomer selected from the group comprising cycloolefins, acrylates and methacrylates, (b) a radiation sensitive acid generating agent and (c) a lactone additive. The lactone additive preferably contains at least 10 carbon atoms and more preferably contains at least one saturated alicyclic moiety. The imaging polymer is preferably a cycloolefin polymer.

公开(公告)号：JP2004012551A

公开(公告)日：2004-01-15

申请号：JP2002162110

申请日：2002-06-03

Applicant: JSR CORP ,  IBM

Inventor： NISHIMURA YUKIO ,  NISHIMURA ISAO ,  ITO HIROSHI ,  TOMAS I WOROU ,  VARANASI PUSHKARA RAO

IPC: G03F7/039 ,  C08F220/10 ,  C08F232/00 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition having high transparency to a radiation, excellent in basic properties as a resist, such as sensitivity, resolution, dry etching resistance and pattern shape and suitable for use as a chemically amplified resist. SOLUTION: The radiation-sensitive resin composition comprises (A) a resin which contains a repeating unit derived from α-perfluoroalkylacrylic esters typified by t-butyl α-trifluoromethylacrylate and a repeating unit derived from a norbornene compound typified by 5-ä2-hydroxy-2, 2-di(trifluoromethyl)ethyl}bicyclo[2.2.1]hept-2-ene or a compound of formula 7 as essential units and becomes alkali-soluble by the action of an acid and (B) a radiation-sensitive acid generator. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2004012545A

公开(公告)日：2004-01-15

申请号：JP2002162080

申请日：2002-06-03

Applicant: JSR CORP ,  JSR MICRO INC ,  IBM

Inventor： YAMAMOTO MASASHI ,  ISHII HIROYUKI ,  ISHIDA EIKO ,  NISHIMURA YUKIO ,  MARK SLEZAK ,  BRUNSVOLD WILLIAM R ,  CHEN KUANG-JUNG ,  VARANASI PUSHKARA RAO

IPC: G03F7/039 ,  C08F20/28 ,  G03F7/004 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition having high transparency to a radiation, excellent in basic physical properties as a resist, such as sensitivity, resolution and pattern shape, and useful particularly as a chemically amplified resist excellent in focus latitude. SOLUTION: The radiation-sensitive resin composition comprises (A) a mixture of alkali-insoluble or slightly alkali-soluble resins having separate repeating units protected with acid-dissociating protective groups and typified by repeating units derived from 2-methyl-2-adamantyl (meth)acrylate, 1-ethylcyclohexyl (meth)acrylate, etc., wherein the acid-dissociating protective group of at least one of the resins is different from that of the other, and (B) a radiation-sensitive acid generator. COPYRIGHT: (C)2004,JPO