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    Method of direct electrodeposition on semiconductor
    2.
    发明专利
    Method of direct electrodeposition on semiconductor 审中-公开
    直接电沉积在半导体上的方法

    公开(公告)号：JP2011225991A

    公开(公告)日：2011-11-10

    申请号：JP2011082976

    申请日：2011-04-04

    Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

    Inventor： SHAO XIAOYAN ,  KOSBAR LAURA L

    IPC: C25D7/12 ,  C25D21/12 ,  H01L21/288 ,  H01L31/04

    CPC classification number: C25D7/123 ,  C25D3/12 ,  C25D3/562 ,  C25D5/024 ,  C25D5/18 ,  H01L31/022425 ,  Y02E10/50

    Abstract: PROBLEM TO BE SOLVED: To provide a method of electrodeposition directly on a semiconductor.SOLUTION: There is provided the method of electrodeposition of a metal or metal alloy on at least one surface of a semiconductor material. The method provides full coverage of an electrodeposited metallic film on the at least one surface of the semiconductor material. The method includes providing a semiconductor material. A metallic film is applied to at least one surface of the semiconductor material by an electrodeposition process. The electrodeposition process employed uses current waveforms that apply a low current density initially, and after a predetermined period of time, the current density is changed to a high current density.

    Abstract translation: 要解决的问题：提供直接电沉积在半导体上的方法。 解决方案：提供了在半导体材料的至少一个表面上电沉积金属或金属合金的方法。 该方法提供半导体材料的至少一个表面上的电沉积金属膜的完全覆盖。 该方法包括提供半导体材料。 通过电沉积工艺将金属膜施加到半导体材料的至少一个表面。 使用的电沉积工艺使用最初施加低电流密度的电流波形，并且在预定时间段之后，将电流密度改变为高电流密度。 版权所有（C）2012，JPO＆INPIT

    FORMATION OF CARBON AND SEMICONDUCTOR NANOMATERIALS USING MOLECULAR ASSEMBLIES
    3.
    发明申请
    FORMATION OF CARBON AND SEMICONDUCTOR NANOMATERIALS USING MOLECULAR ASSEMBLIES 审中-公开
    使用分子组装法制备碳和半导体纳米材料

    公开(公告)号：WO2008066947A2

    公开(公告)日：2008-06-05

    申请号：PCT/US2007068196

    申请日：2007-05-04

    Applicant: IBM ,  AFZALI-ARDAKANI ALI ,  KAGAN CHERIE R ,  KOSBAR LAURA L

    Inventor： AFZALI-ARDAKANI ALI ,  KAGAN CHERIE R ,  KOSBAR LAURA L

    IPC: H01L21/336

    CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C30B25/00 ,  C30B29/02 ,  C30B29/60 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/78681 ,  H01L29/78684 ,  Y10S977/762 ,  Y10S977/84 ,  Y10S977/89 ,  Y10S977/932 ,  Y10S977/936 ,  Y10S977/938

    Abstract: The invention is directed to a method of forming carbon nanomaterials or semiconductor nanomaterials. The method comprises providing a substrate and attaching a molecular precursor to the substrate. The molecular precursor includes a surface binding group for attachment to the substrate and a binding group for attachment of metal-containing species. The metal-containing species is selected from a metal cation, metal compound, or metal or metal-oxide nanoparticle to form a metallized molecular precursor. The metallized molecular precursor is then subjected to a heat treatment to provide a catalytic site from which the carbon nanomaterials or semiconductor nanomaterials form. The heating of the metallized molecular precursor is conducted under conditions suitable for chemical vapor deposition of the carbon nanomaterials or semiconductor nanomaterials.

    Abstract translation: 本发明涉及形成碳纳米材料或半导体纳米材料的方法。 该方法包括提供基底并将分子前体附着到基底上。 分子前体包括用于连接到底物的表面结合基团和用于附着含金属的物质的结合基团。 含金属的物质选自金属阳离子，金属化合物或金属或金属氧化物纳米颗粒，以形成金属化的分子前体。 然后对金属化分子前体进行热处理以提供形成碳纳米材料或半导体纳米材料的催化部位。 金属化分子前体的加热在适于碳纳米材料或半导体纳米材料的化学气相沉积的条件下进行。

    STRUCTURES FABRICATED WITH CROSS-LINKED BIOBASED MATERIALS
    9.
    发明专利
    STRUCTURES FABRICATED WITH CROSS-LINKED BIOBASED MATERIALS 未知

    公开(公告)号：MY119902A

    公开(公告)日：2005-08-30

    申请号：MYPI9603557

    申请日：1996-08-27

    Applicant: IBM

    Inventor： AFZALI-ARDAKANI ALI ,  GELORME JEFFREY D ,  KOSBAR LAURA L

    IPC: H05K1/03

    Abstract: BIOBASED CROSS-LINKED COMPOSITIONS, METHODS OF FABRICATION AND STRUCTURES, IN PARTICULAR BIOBASED PRINTED WIRING BOARDS USING THE COMPOSITIONS AND METHODS OF MAKING THE STRUCTURES ARE DESCRIBED. BIOBASED MATERIALS SUCH AS LIGNIN, CROP OILS, WOOD RESINS, TANNINS, AND POLYSACCHARIDES AND COMBINATIONS THEREOF ARE CROSS-LINKED, PREFERABLY USING HEAT, A CROSS-LINKING AGENT, AND AN INITIATOR. THE MATERIALS FABRICATED HAVE SUITABLE PROPERTIES FOR PRINTED WIRING BOARDS WHICH ARE MADE BY IMPREGNATING A FIBERGLASS OR BIOBASED CLOTH WITH AN ADMIXTURE OF THE BIOBASED MATERIAL, CROSS-LINKING AGENT AND INITIATOR WHICH IS PROCESSED BY CONVENTIONAL METHODS TO PRODUCE A PRINTED WIRING BOARD.

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