公开(公告)号：AU549136B2

公开(公告)日：1986-01-16

申请号：AU6298280

申请日：1980-10-06

Applicant: IBM

Inventor： AVIRAM ARI ,  HOFER DONALD C ,  KAURMAN FRANK B ,  KRAMER STEVEN R ,  SHAW JANE M

IPC: G03C1/00 ,  G03C5/16 ,  G03F7/26 ,  G03C1/727

公开(公告)号：CA1161685A

公开(公告)日：1984-02-07

申请号：CA358898

申请日：1980-08-25

Applicant: IBM

Inventor： AVIRAM ARI ,  HOFER DONALD C ,  KAUFMAN FRANK B ,  KRAMER STEVEN R

IPC: G03F7/004 ,  G03C1/675 ,  G03C5/00 ,  G03C5/16 ,  G03F7/038 ,  H01L21/027 ,  H01L21/302 ,  G03C1/495

Abstract: new class of X-ray resists are described. The resists are donor polymer-doped halocarbon acceptor transfer complexes. They are prepared from known polymeric backbones such as polyvinylchloride, polyglutamic acid, polyvinylbenzylchloride, polyepichlorohydrin, poly(.alpha.halophosphazenes), polyacrylic chloride, polystyrene and the like, and donor molecules such as tetrathiafulvalenes, tetraselenafulvalenes, dithiadiselenafulvalene, ferrocenes, phenothiazines, pyrazoline and an amine having the general formula R-NH2 where R can be selected from alkyl and aryl groups. A lithographic method is also described.

公开(公告)号：AU539639B2

公开(公告)日：1984-10-11

申请号：AU6298180

申请日：1980-10-06

Applicant: IBM

Inventor： AVIRAM ARI ,  HATZAKIS MICHAEL ,  KAUFMAN FRANK B ,  KRAMER STEVEN R ,  HOFER DONALD C ,  JONES FLETCHER

IPC: G03D7/00 ,  G03C1/727

公开(公告)号：CA1163671A

公开(公告)日：1984-03-13

申请号：CA358901

申请日：1980-08-25

Applicant: IBM

Inventor： AVIRAM ARI ,  HATZAKIS MICHAEL ,  JONES FLETCHER ,  KAUFMAN FRANK B ,  KRAMER STEVEN R ,  HOFER DONALD C

IPC: G03D7/00

Abstract: A new class of E-beam resists is described. The resists are donor polymer-doped halocarbon acceptor transfer complexes. They are prepared from known polymeric backbones such as polyvinylchloride, polyglutamic acid, polyvinylbenzylchloxide, polyepichlorohydrin, poly(ahalophosphazenes), polyacrylic chloride, polystyrene and the like; and donor molecules such as tetrathiafulvalenes, tetraselenafulvalenes, dithiadiselenafulvalene, ferrocenes, phenothiazines, pyrazoline and an amine having the general formula R-NH2 where R can be selected from alkyl and aryl groups. A lithographic method is also described.

公开(公告)号：CA1175990A

公开(公告)日：1984-10-09

申请号：CA358894

申请日：1980-08-25

Applicant: IBM

Inventor： AVIRAM ARI ,  KAUFMAN FRANK B ,  KRAMER STEVEN R ,  SHAW JANE M ,  HOFER DONALD C

IPC: G03C1/00 ,  G03C5/16 ,  G03F7/26

Abstract: A new class of phot resists is described. The resists are donor polymer-doped halcarbon acceptor transfer complexes. They are prepared from know polymeric backbones such as polyvinylchloride, polyglutamic acid, polyvinylbenzylchloxide, polyepichlorohydrin, poly(.alpha.halophosphazenes), polyacrylic chloride, polystyrene and the like; and donor molecules such as tetrathiafulvalenes, tetraselenafulvalenes, dithiadiselenafulvalene, ferrocenes, phenothiazines, pyrazoline and an amine having the general formula R-NH2 where R can be selected from alkyl and aryl groups. A lithographic method is also described.