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公开(公告)号:JPH05224411A
公开(公告)日:1993-09-03
申请号:JP26846992
申请日:1992-10-07
Applicant: IBM
Inventor: KURISUTOFUAA JIYON NOOZU , SUTEIIBU SEIICHI MIURA , MERUBIN UOREN MONTOGOMERII , UEIN MAATEIN MOROO , RANDORUFU JIYOZEFU SUMISU
IPC: G03F7/022 , H01L21/027
Abstract: PURPOSE: To obtain a high sensitivity, high contrast, excellent durability to the etching of an unexposed zone and vertical side wall shape, by containing a sensitizing agent of a mixed ester of bis and trisalkanes with a specific sulfonic acid. CONSTITUTION: This positive resist is constituted of a mixture of 100 pts.wt. phenol-aldehyde resin with 18-100 pts.wt. dissolution suppressing agent. The dissolution suppressing agent is the mixed ester introduced by esterifying a mixture naphthoquinone diazide 4- and 5-sulfonic acid with a polyphenol. The polyphenol is expressed by a formula, (ph(OH)x )y CR4-y . In the formula, ph expresses benzen ring, (x) expresses integers of 1-3, (y) expresses 2 or 3, R expresses hydrogen, fluorine or the like. The dissolution suppressing agnet has >=80% esterified hydroxyl group and contains 10-90mol% 4-sulfonate ester and 90-10mol% 5-sulfonate ester.
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公开(公告)号:JPH04217251A
公开(公告)日:1992-08-07
申请号:JP3137491
申请日:1991-02-01
Applicant: IBM
Inventor: UIRIAMU ROSU BURANZUBOURUDO , KURISUTOFUAA JIYON NOOZU , MERUBIN UOREN MONGOMERII , UEIN MAATEIN MOROO , KEBIN MAIKURU UERUSHIYU
IPC: G03F7/004 , G03F7/029 , G03F7/039 , H01L21/027 , H01L21/30
Abstract: PURPOSE: To obtain the acid-sensitized photoresist composition comprising an acid generation photoinitiator and a polymer binder and/or a polymerizable compound and an acid responsive group and being accelerated in photochemical reaction velocity. CONSTITUTION: This acid-initiation photoresist composition to be used comprises the acid generation photoinitiator and the polymer binder and/or a matrix, the acid responsive group capable of patternizing the composition by an acid initiation chemical reaction, and a sufficient amount of a hydroxyaromatic compound for accelerating a reaction velocity of the photoresist composition during irradiation for image formation, and the photoreaction velocity is remarkably enhanced by adding this hydroxyaromatic compound to the photoresist composition in a amount of 1-5weight%.
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