公开(公告)号：JPH05224411A

公开(公告)日：1993-09-03

申请号：JP26846992

申请日：1992-10-07

Applicant: IBM

Inventor： KURISUTOFUAA JIYON NOOZU ,  SUTEIIBU SEIICHI MIURA ,  MERUBIN UOREN MONTOGOMERII ,  UEIN MAATEIN MOROO ,  RANDORUFU JIYOZEFU SUMISU

IPC: G03F7/022 ,  H01L21/027

Abstract: PURPOSE: To obtain a high sensitivity, high contrast, excellent durability to the etching of an unexposed zone and vertical side wall shape, by containing a sensitizing agent of a mixed ester of bis and trisalkanes with a specific sulfonic acid. CONSTITUTION: This positive resist is constituted of a mixture of 100 pts.wt. phenol-aldehyde resin with 18-100 pts.wt. dissolution suppressing agent. The dissolution suppressing agent is the mixed ester introduced by esterifying a mixture naphthoquinone diazide 4- and 5-sulfonic acid with a polyphenol. The polyphenol is expressed by a formula, (ph(OH)x )y CR4-y . In the formula, ph expresses benzen ring, (x) expresses integers of 1-3, (y) expresses 2 or 3, R expresses hydrogen, fluorine or the like. The dissolution suppressing agnet has >=80% esterified hydroxyl group and contains 10-90mol% 4-sulfonate ester and 90-10mol% 5-sulfonate ester.

公开(公告)号：JPH05249680A

公开(公告)日：1993-09-28

申请号：JP20784692

申请日：1992-08-04

Applicant: IBM

Inventor： ROBAATO DEIBITSUDO AREN ,  UIRIAMU ROSU BURANZUBOURUDO ,  BAATON JIESHII KAAPENTAA ,  UIRIAMU DEIINAN HINZUBAAGU ,  JIYOZEFU RATOORE ,  MAIKURU JIYOOJI MAKUMASUTAA ,  MERUBIN UOREN MONTOGOMERII ,  UEIN MAATEIN MOROO ,  ROOGAN ROIDO SHINPUSON ,  ROBAATO JIEIMUZU TOUEIGU ,  GUREGORII MAIKURU UOORURAFU

IPC: G03F7/004 ,  C08F2/50 ,  G03F7/039 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE: To obtain a positive photoresist and to provide a photolithographic method using the photoresist. CONSTITUTION: This photoresist contains a polymer practically insoluble in water and base and unstable to light and a photo-acid generating agent capable of forming a strong acid. The photo-acid generating agent is sulfonate ester derived from N-hydroxyamide or N-hydroxyimide. This photoresist further contains a proper photosensitizer.

公开(公告)号：JPH04328747A

公开(公告)日：1992-11-17

申请号：JP33464691

申请日：1991-12-18

Applicant: IBM

Inventor： KASURIIN MARII KOONETSUTO ,  JIYOOJI JIYOZEFU HEFUERON ,  MERUBIN UOREN MONTOGOMERII ,  UEIN MAATEIN MOROO

IPC: G03F7/004 ,  G03F7/022 ,  G03F7/16 ,  H01L21/027

Abstract: PURPOSE: To more uniformly coat the top of a substrate having a uniform of ununiform pattern by preparing a specified radiation sensitive compsn. and spin-coating the top of a semiconductive wafer with the compsn. CONSTITUTION: This radiation sensitive compsn. is composed of at least one of novolak resin and a polyvinylphenol copolymer, a radiation sensitive component selected from among diazoquinone, polyolefin sulfone and an acid generating agent and an ethyl-3-ethoxypropionate(EEP) solvent. The top of a substrate is spin-coated with the compsn. and the resultant film is dried until the solvent content of the film is reduced to