LASER INDUCED CHEMICAL ETCHING OF METALS WITH EXCIMER LASERS

    公开(公告)号:DE3477022D1

    公开(公告)日:1989-04-13

    申请号:DE3477022

    申请日:1984-12-11

    Applicant: IBM

    Abstract: Disclosed is a method of etching a metallized substrate by excimer laser radiation. The substrate is exposed to a selected gas, e.g., a halogen gas, which spontaneously reacts with the metal forming a solid reaction product layer on the metal by a partial consumption of the metal. A beam of radiation from an excimer laser, e.g. XeF laser operating at a wavelength of 351 nm or XeCl laser at 308 nm or KrF laser at 248 nm or KrCi laser at 222 nm or ArF laser at 193 nm or F 2 laser at 157 nm, is applied to the reaction product in a desired pattern to vaporize the reaction product and thereby selectively etch the metal with a high resolution.

Patent Agency Ranking