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公开(公告)号：JPH10223529A
公开(公告)日：1998-08-21
申请号：JP719198
申请日：1998-01-19
Applicant: IBM
Inventor： GORDON MICHAEL STUART , KENDALL RODNEY ARTHUR , PINCKNEY DAVID JOHN , SPEIDELL JAMES LOUIS
Abstract: PROBLEM TO BE SOLVED: To provide a method of lessening contamination of a mask in the electron beam lithography. SOLUTION: This method comprises doping at least one plane 110, 120 of an Si membrane mask 100 with B to reduce the electrical resistance of the mask, applying a voltage 135 on both planes of the mask to create an electric field piercing the mask, thereby heating it, computing the shape distortion of each pattern in the mask caused by heating to compensate for the proximity of other shape located near each pattern, and correcting the shape of each pattern. This method is equally applicable to an electron beam system and/or an ion beam system or to a stencil mask and a diffusion mask.
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公开(公告)号：JPS62262000A
公开(公告)日：1987-11-14
申请号：JP7765687
申请日：1987-04-01
Applicant: IBM
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公开(公告)号：DE69206087D1
公开(公告)日：1995-12-21
申请号：DE69206087
申请日：1992-08-14
Applicant: IBM
Inventor： CUOMO JEROME JOHN , GUARNIERI CHARLES RICHARD , HOENIG BRUCE ALBERT , SEKI HAKIME , SPEIDELL JAMES LOUIS , WHITEHAIR STANELY JOSEPH
Abstract: Optical elements, and methods for fabricating them, are described wherein each element includes a free standing (self supporting) polycrystalline continuous thin film of diamond (101) combined with a non-hydrogenated amorphous diamond like carbon (DLC) film having a high percentage of sp bonding (104). These elements may be designed to have optically smooth surfaces, have wide optical transmission ranges (for example, be transparent across the infrared portion of the spectrum), and exhibit exceptional durability characteristics. Optical instruments that include such elements are also described, along with the derivative benefits, such as improved operating performance and lower maintenance requirements, realized using the novel optical elements. In particular, a polarization Michaelson interferometer (PMI) is taught which is operative over the entire range from far infrared into the visible portion of the spectrum without requiring the exchange of beam splitters or beam polarizers. These performance benefits are achieved as a result of the transmission characteristics of the novel optical elements associated with the PMI.
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公开(公告)号：DE3785292T2
公开(公告)日：1993-10-28
申请号：DE3785292
申请日：1987-09-18
Applicant: IBM
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公开(公告)号：DE69611053D1
公开(公告)日：2001-01-04
申请号：DE69611053
申请日：1996-04-09
Applicant: IBM
Inventor： COLGAN EVAN GEORGE , HARPER JAMES MICKELL EDWIN , KAUFMAN FRANK BENJAMIN , MANNI MARGARET PAGGY , MELCHER ROBERT LEE , SPEIDELL JAMES LOUIS
IPC: G02F1/1335 , G02F1/1339 , G02F1/1343 , G02F1/136 , G02F1/1362 , G02F1/1368
Abstract: A reflective spatial light modulator array is described incorporating liquid crystal devices, mirrors, a semiconductor substrate, electrical circuits, and a reflector/absorber layer for blocking light. The invention overcomes the problem of shielding light from semiconductor devices, high optical throughput and contrast, pixel storage capacitance to hold the voltage across the liquid crystal device and precise control of the liquid crystal device thickness without spacers obscuring the mirrors.
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Patent Agency Ranking
公开(公告)号：DE3785292D1
公开(公告)日：1993-05-13
申请号：DE3785292
申请日：1987-09-18
Applicant: IBM
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公开(公告)号：DE69611053T2
公开(公告)日：2001-05-10
申请号：DE69611053
申请日：1996-04-09
Applicant: IBM
Inventor： COLGAN EVAN GEORGE , HARPER JAMES MICKELL EDWIN , KAUFMAN FRANK BENJAMIN , MANNI MARGARET PAGGY , MELCHER ROBERT LEE , SPEIDELL JAMES LOUIS
IPC: G02F1/1335 , G02F1/1339 , G02F1/1343 , G02F1/136 , G02F1/1362 , G02F1/1368
Abstract: A reflective spatial light modulator array is described incorporating liquid crystal devices, mirrors, a semiconductor substrate, electrical circuits, and a reflector/absorber layer for blocking light. The invention overcomes the problem of shielding light from semiconductor devices, high optical throughput and contrast, pixel storage capacitance to hold the voltage across the liquid crystal device and precise control of the liquid crystal device thickness without spacers obscuring the mirrors.
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公开(公告)号：GB2364439B
公开(公告)日：2004-09-15
申请号：GB0100661
申请日：2001-01-11
Applicant: IBM
Inventor： CORDES MICHAEL JAMES , CORDES STEVEN ALAN , GHOSHAL UTTAM SHYAMALINDU , ROBINSON ERROL WAYNE , SPEIDELL JAMES LOUIS
Abstract: Method and apparatus for thermal management of an integrated circuit. A semiconductor device includes an integrated circuit and an integrated thermoelectric cooler formed on a common substrate. A semiconductor device is fabricated by forming an integrated circuit on a front side of the substrate and forming an integrated thermoelectric cooler on a back side of the substrate. A first thermal sink of semiconductor material capable of absorbing heat from the integrated circuit is formed on the back side of the substrate. N-type thermoelectric elements are formed on contacts formed on the first thermal sink. P-type thermoelectric elements are formed on contacts formed on a second thermal sink of semiconductor material capable of dissipating heat. The p-type and n-type thermoelectric elements are bonded to the contacts on the first and second thermal sinks, respectively, by a flip-chip soldering process. Using this method, semiconductor devices including an integrated circuit and integrated modules of thermoelectric elements are formed having cooling capacities corresponding to heat dissipated from different portions of the integrated circuit. As a result, substantially uniform temperature distribution across the integrated circuit can be achieved.
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公开(公告)号：GB2364439A
公开(公告)日：2002-01-23
申请号：GB0100661
申请日：2001-01-11
Applicant: IBM
Inventor： CORDES MICHAEL JAMES , CORDES STEVEN ALAN , GHOSHAL UTTAM SHYAMALINDU , ROBINSON ERROL WAYNE , SPEIDELL JAMES LOUIS
Abstract: A semiconductor device is fabricated by forming an integrated circuit 309 on a front side of a substrate 303 and forming an integrated thermoelectric cooler 310 on a back side of the substrate. A first thermal sink 314 of semiconductor material capable of absorbing heat from the integrated circuit is formed on the back side of the substrate. N- type thermoelectric elements 328,330 are formed on contacts formed on the first thermal sink. P-type thermoelectric elements 358,360 are formed on contacts formed on a second thermal sink 339 of semiconductor material capable of dissipating heat. The p-type and n-type thermoelectric elements are bonded to the contacts on the first and second thermal sinks, respectively, by a flip-chip soldering process. Using this method, semiconductor devices including an integrated circuit and integrated modules of thermoelectric elements are formed having cooling capacities corresponding to heat dissipated from different portions of the integrated circuit. As a result, substantially uniform temperature distribution across the integrated circuit can be achieved.
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