公开(公告)号：DE69431866T2

公开(公告)日：2003-08-28

申请号：DE69431866

申请日：1994-10-28

Applicant: IBM

Inventor： ARLDT ROY LYNN ,  BOYKO CHRISTINA MARIE ,  CAYSON BURTRAN JOE ,  KOZLOWSKI RICHARD MICHAEL ,  KULESZA JOSEPH DUANE ,  LAUFFER JOHN MATTHEW ,  LIU PHILIP CHIHCHAU ,  MARKOVICH VOYA RISTA ,  MAHMOUD ISSA SAID ,  MUSKA JAMES FRANCIS ,  PAPATHOMAS KOSTAS ,  SABIA JOSEPH GENE

IPC: B32B7/04 ,  C08G59/40 ,  C08G73/00 ,  C08L63/00 ,  C09D163/00 ,  H01B1/20 ,  H01B1/22 ,  H01B1/24 ,  H05K1/09 ,  H05K1/11 ,  H05K1/16 ,  H05K3/00 ,  H05K3/40

公开(公告)号：DE69128208D1

公开(公告)日：1998-01-02

申请号：DE69128208

申请日：1991-03-05

Applicant: IBM

Inventor： LAUFFER JOHN MATTHEW ,  SCHUMACHER RICHARD ANTHONY

IPC: H01G4/33 ,  H05K1/16 ,  H05K3/42 ,  H05K3/46 ,  H01L23/538

Abstract: Disclosed is a multilayer circuit package (101) having a buried thin film capacitor (141). The circuit packages includes at least a power core (111a), a ground core (111b), a first signal core (121), a second signal core (131), and the integral, buried, thin film capacitor. The integral, buried, thin film capacitor (141) serves to capacitively couple the first and second signal cores. Structurally, the first signal core includes at least one first wire (123) that terminates in at least one first electrode (125), while the second signal core includes at least one second wire (133) that terminates in at least one second electrode (135). At least a portion of the first electrode overlays at least a portion of the second electrode and is separated therefrom by a thin film of a dielectric material (151). The first electrode, the second electrode, and the thin film of dielectric material define the integral buried capacitor. The thin film capacitor is prepared by thin film methods, with epitaxial deposition of the dielectric.

公开(公告)号：DE69431866D1

公开(公告)日：2003-01-23

申请号：DE69431866

申请日：1994-10-28

Applicant: IBM

Inventor： ARLDT ROY LYNN ,  BOYKO CHRISTINA MARIE ,  CAYSON BURTRAN JOE ,  KOZLOWSKI RICHARD MICHAEL ,  KULESZA JOSEPH DUANE ,  LAUFFER JOHN MATTHEW ,  LIU PHILIP CHIHCHAU ,  MARKOVICH VOYA RISTA ,  MAHMOUD ISSA SAID ,  MUSKA JAMES FRANCIS ,  PAPATHOMAS KOSTAS ,  SABIA JOSEPH GENE

IPC: B32B7/04 ,  C08G59/40 ,  C08G73/00 ,  C08L63/00 ,  C09D163/00 ,  H01B1/20 ,  H01B1/22 ,  H01B1/24 ,  H05K1/09 ,  H05K1/11 ,  H05K1/16 ,  H05K3/00 ,  H05K3/40

公开(公告)号：DE69434192T2

公开(公告)日：2005-12-08

申请号：DE69434192

申请日：1994-10-28

Applicant: IBM

Inventor： ARLDT ROY LYNN ,  BOYKO CHRISTINA MARIE ,  CAYSON BURTAN JOE ,  KOZLOWSKI RICHARD MICHAEL ,  KULESZA JOSEPH DUANE ,  LAUFFER JOHN MATTHEW ,  LIU PHILIP CHIHCHAU ,  MARKOVICH VOYA RISTA ,  MAHMOUD ISSA SAID ,  MUSKA JAMES FRANCIS ,  PAPATHOMAS KOSTAS ,  SABIA JOSEPH GENE

IPC: B32B7/04 ,  C08G59/40 ,  C08G73/00 ,  C08L63/00 ,  C09D163/00 ,  H01B1/20 ,  H01B1/22 ,  H01B1/24 ,  H05K1/09 ,  H05K1/11 ,  H05K1/16 ,  H05K3/00 ,  H05K3/40

公开(公告)号：MY117343A

公开(公告)日：2004-06-30

申请号：MYPI9601295

申请日：1996-04-05

Applicant: IBM

Inventor： HANSEN JAMES JENS ,  LAUFFER JOHN MATTHEW ,  RUSSELL DAVID JOHN

IPC: H05K1/02 ,  H05K1/05 ,  H05K1/11 ,  H05K3/00 ,  H05K3/34 ,  H05K3/40 ,  H05K3/44 ,  H05K3/46

Abstract: A METAL CARRIER (11, 31) HAS A DIELECTRIC MATERIAL (12, 32) WITH A THICKNESS OF LESS THAN 0.1016 MM (0.004 INCH) AND ELECTRICAL VOLTAGE INSULATION CHARACTERISTICS OF AT LEAST 2500 VOLTS FORMED ON A SURFACE. A DONUT CONFIGURED LAND (38) DEFINES AT LEAST ONE VIA (33) OR OPENING FOR REMOVING DIELECTRIC MATERIAL SELECTIVELY. REFLOW SOLDER IS USED TO FORM ELECTRICAL INTERCONNECTIONS (23-28), AND THE VIAS PROVIDE THERMAL DISSIPATION SUFFICIENT TO CONFORM TO SAFETY REQUIREMENTS. (FIGURE 3)

公开(公告)号：DE69434192D1

公开(公告)日：2005-01-20

申请号：DE69434192

申请日：1994-10-28

Applicant: IBM

Inventor： ARLDT ROY LYNN ,  BOYKO CHRISTINA MARIE ,  CAYSON BURTAN JOE ,  KOZLOWSKI RICHARD MICHAEL ,  KULESZA JOSEPH DUANE ,  LAUFFER JOHN MATTHEW ,  LIU PHILIP CHIHCHAU ,  MARKOVICH VOYA RISTA ,  MAHMOUD ISSA SAID ,  MUSKA JAMES FRANCIS ,  PAPATHOMAS KOSTAS ,  SABIA JOSEPH GENE

IPC: B32B7/04 ,  C08G59/40 ,  C08G73/00 ,  C08L63/00 ,  C09D163/00 ,  H01B1/20 ,  H01B1/22 ,  H01B1/24 ,  H05K1/09 ,  H05K1/11 ,  H05K1/16 ,  H05K3/00 ,  H05K3/40

公开(公告)号：SG70983A1

公开(公告)日：2000-03-21

申请号：SG1996006625

申请日：1996-03-08

Applicant: IBM

Inventor： LAUFFER JOHN MATTHEW ,  RUSSELL DAVID JOHN ,  HANSEN JAMES JENS

IPC: H05K1/05 ,  H05K1/02 ,  H05K1/11 ,  H05K3/00 ,  H05K3/34 ,  H05K3/40 ,  H05K3/44 ,  H05K3/46

Abstract: A metal carrier has a dielectric material with a thickness of less than 0.004 inch and electrical voltage insulation characteristics of at least 2500 volts formed on a surface. A donut configured land defines at least one via or opening for removing dielectric material selectively. Reflow solder is used to form electrical interconnections, and the vias provide thermal dissipation sufficient to conform to safety requirements.

公开(公告)号：DE69128208T2

公开(公告)日：1998-05-28

申请号：DE69128208

申请日：1991-03-05

Applicant: IBM

Inventor： LAUFFER JOHN MATTHEW ,  SCHUMACHER RICHARD ANTHONY

IPC: H01G4/33 ,  H05K1/16 ,  H05K3/42 ,  H05K3/46 ,  H01L23/538

Abstract: Disclosed is a multilayer circuit package (101) having a buried thin film capacitor (141). The circuit packages includes at least a power core (111a), a ground core (111b), a first signal core (121), a second signal core (131), and the integral, buried, thin film capacitor. The integral, buried, thin film capacitor (141) serves to capacitively couple the first and second signal cores. Structurally, the first signal core includes at least one first wire (123) that terminates in at least one first electrode (125), while the second signal core includes at least one second wire (133) that terminates in at least one second electrode (135). At least a portion of the first electrode overlays at least a portion of the second electrode and is separated therefrom by a thin film of a dielectric material (151). The first electrode, the second electrode, and the thin film of dielectric material define the integral buried capacitor. The thin film capacitor is prepared by thin film methods, with epitaxial deposition of the dielectric.