Abstract:
A stacked via structure for reducing vertical stiffness includes: a plurality of stacked vias, each via disposed on a disc-like structure. The disc-like structure includes a plated through hole landing supporting the plurality of stacked vias. The plated through hole landing includes a compliant center zone; and spring-like stiffness-reducing connectors for connecting the compliant center zone of the plated through hole landing.
Abstract:
A METAL CARRIER (11, 31) HAS A DIELECTRIC MATERIAL (12, 32) WITH A THICKNESS OF LESS THAN 0.1016 MM (0.004 INCH) AND ELECTRICAL VOLTAGE INSULATION CHARACTERISTICS OF AT LEAST 2500 VOLTS FORMED ON A SURFACE. A DONUT CONFIGURED LAND (38) DEFINES AT LEAST ONE VIA (33) OR OPENING FOR REMOVING DIELECTRIC MATERIAL SELECTIVELY. REFLOW SOLDER IS USED TO FORM ELECTRICAL INTERCONNECTIONS (23-28), AND THE VIAS PROVIDE THERMAL DISSIPATION SUFFICIENT TO CONFORM TO SAFETY REQUIREMENTS. (FIGURE 3)
Abstract:
A metal carrier has a dielectric material with a thickness of less than 0.004 inch and electrical voltage insulation characteristics of at least 2500 volts formed on a surface. A donut configured land defines at least one via or opening for removing dielectric material selectively. Reflow solder is used to form electrical interconnections, and the vias provide thermal dissipation sufficient to conform to safety requirements.
Abstract:
A semiconductor package and method for preparing same to obtain improved die adhesion to organic chip carriers has been developed. A copper die bond pad is coated with a passivation material and attached to an organic card with the same passivation material. A semiconductor die may be adhered to the coated die bond pad with either the same passivation material or a common die bond adhesive. Alternatively, the passivation material is coated only on the portion of the die bond pad where the die is attached, and common die bond adhesive attaches the die bond pad to the organic card.