公开(公告)号：JPH11315479A

公开(公告)日：1999-11-16

申请号：JP5221999

申请日：1999-03-01

Applicant: IBM

Inventor： BERND K APPERT ,  LAWRENCE R BRAMBERG ,  WILLIAM T FOTONY ,  ROSS D HARVENS ,  ROBERT M JAPPU ,  PAPATHOMAS KOSTAS ,  YAN OBUJIMATO ,  MARK D POLIKS ,  AMARUJITO S RAAI

IPC: B32B5/02 ,  B29B11/16 ,  B29B15/10 ,  D06M15/41 ,  D06M101/00 ,  H01L23/00 ,  H01L23/08 ,  H01L23/14 ,  H05K1/03

Abstract: PROBLEM TO BE SOLVED: To obtain a textile/resin composite material with high electrical insulation suitable for electronic packages by coating a cloth member having a specified maximum thickness and containing particles at low levels with a specific curable resin material. SOLUTION: This textile material having an insulation resistance of as high as about 1,000,000 Ω or greater after subjecting to HAST test is obtained by coating a woven fabric made of glass fiber strand, having a specified maximum thickness and containing =145 deg.C in glass transition temperature such as phenolic resin followed by at least partially curing the resin material.

公开(公告)号：DE69431866T2

公开(公告)日：2003-08-28

申请号：DE69431866

申请日：1994-10-28

Applicant: IBM

Inventor： ARLDT ROY LYNN ,  BOYKO CHRISTINA MARIE ,  CAYSON BURTRAN JOE ,  KOZLOWSKI RICHARD MICHAEL ,  KULESZA JOSEPH DUANE ,  LAUFFER JOHN MATTHEW ,  LIU PHILIP CHIHCHAU ,  MARKOVICH VOYA RISTA ,  MAHMOUD ISSA SAID ,  MUSKA JAMES FRANCIS ,  PAPATHOMAS KOSTAS ,  SABIA JOSEPH GENE

IPC: B32B7/04 ,  C08G59/40 ,  C08G73/00 ,  C08L63/00 ,  C09D163/00 ,  H01B1/20 ,  H01B1/22 ,  H01B1/24 ,  H05K1/09 ,  H05K1/11 ,  H05K1/16 ,  H05K3/00 ,  H05K3/40

公开(公告)号：DE69434192D1

公开(公告)日：2005-01-20

申请号：DE69434192

申请日：1994-10-28

Applicant: IBM

Inventor： ARLDT ROY LYNN ,  BOYKO CHRISTINA MARIE ,  CAYSON BURTAN JOE ,  KOZLOWSKI RICHARD MICHAEL ,  KULESZA JOSEPH DUANE ,  LAUFFER JOHN MATTHEW ,  LIU PHILIP CHIHCHAU ,  MARKOVICH VOYA RISTA ,  MAHMOUD ISSA SAID ,  MUSKA JAMES FRANCIS ,  PAPATHOMAS KOSTAS ,  SABIA JOSEPH GENE

IPC: B32B7/04 ,  C08G59/40 ,  C08G73/00 ,  C08L63/00 ,  C09D163/00 ,  H01B1/20 ,  H01B1/22 ,  H01B1/24 ,  H05K1/09 ,  H05K1/11 ,  H05K1/16 ,  H05K3/00 ,  H05K3/40

公开(公告)号：DE69431866D1

公开(公告)日：2003-01-23

申请号：DE69431866

申请日：1994-10-28

Applicant: IBM

Inventor： ARLDT ROY LYNN ,  BOYKO CHRISTINA MARIE ,  CAYSON BURTRAN JOE ,  KOZLOWSKI RICHARD MICHAEL ,  KULESZA JOSEPH DUANE ,  LAUFFER JOHN MATTHEW ,  LIU PHILIP CHIHCHAU ,  MARKOVICH VOYA RISTA ,  MAHMOUD ISSA SAID ,  MUSKA JAMES FRANCIS ,  PAPATHOMAS KOSTAS ,  SABIA JOSEPH GENE

IPC: B32B7/04 ,  C08G59/40 ,  C08G73/00 ,  C08L63/00 ,  C09D163/00 ,  H01B1/20 ,  H01B1/22 ,  H01B1/24 ,  H05K1/09 ,  H05K1/11 ,  H05K1/16 ,  H05K3/00 ,  H05K3/40

公开(公告)号：DE69222905D1

公开(公告)日：1997-12-04

申请号：DE69222905

申请日：1992-07-14

Applicant: IBM

Inventor： CHRISTIE FREDERICK R ,  PAPATHOMAS KOSTAS ,  WANG DAVID W

IPC: C08G18/76 ,  C08G73/06 ,  C08L79/04 ,  C09J175/00 ,  C09J175/04 ,  H01L21/56 ,  H01L21/60 ,  H01L23/29 ,  C08G73/00

Abstract: Compositions containing bisphenol M-dicyanate, prepolymer thereof, or mixtures thereof, and 4,4'-ethylidene bisphenoldicyanate, prepolymer thereof or mixtures thereof; and filler having maximum particle size of 20 microns and being substantially free of alpha particle emissions. The compositions are useful in forming interconnection structures between an integrated semiconductor device (1) and a carrier substrate (2).

公开(公告)号：DE69112157T2

公开(公告)日：1996-04-18

申请号：DE69112157

申请日：1991-06-08

Applicant: IBM

Inventor： CIBULSKY MICHAEL J ,  PAPATHOMAS KOSTAS ,  SCHMITT GEORGE P

IPC: C08G59/18 ,  C08G59/40 ,  C08J3/24 ,  C08J5/24 ,  H05K3/02

Abstract: A dicyandiamide crosslinked epoxy prepreg substantially free from dicyandiamide crystals is obtained by subjecting an epoxy composition containing dicyandiamide to elevated temperature to thereby form a substantially prereacted product, adding solvents if desired, desolvating, and then thermally advancing the prereacted product to the desired state of crosslinking to thereby form the prepreg.

公开(公告)号：DE69434192T2

公开(公告)日：2005-12-08

申请号：DE69434192

申请日：1994-10-28

Applicant: IBM

Inventor： ARLDT ROY LYNN ,  BOYKO CHRISTINA MARIE ,  CAYSON BURTAN JOE ,  KOZLOWSKI RICHARD MICHAEL ,  KULESZA JOSEPH DUANE ,  LAUFFER JOHN MATTHEW ,  LIU PHILIP CHIHCHAU ,  MARKOVICH VOYA RISTA ,  MAHMOUD ISSA SAID ,  MUSKA JAMES FRANCIS ,  PAPATHOMAS KOSTAS ,  SABIA JOSEPH GENE

IPC: B32B7/04 ,  C08G59/40 ,  C08G73/00 ,  C08L63/00 ,  C09D163/00 ,  H01B1/20 ,  H01B1/22 ,  H01B1/24 ,  H05K1/09 ,  H05K1/11 ,  H05K1/16 ,  H05K3/00 ,  H05K3/40

公开(公告)号：DE69112157D1

公开(公告)日：1995-09-21

申请号：DE69112157

申请日：1991-06-08

Applicant: IBM

Inventor： CIBULSKY MICHAEL J ,  PAPATHOMAS KOSTAS ,  SCHMITT GEORGE P

IPC: C08G59/18 ,  C08G59/40 ,  C08J3/24 ,  C08J5/24 ,  H05K3/02

Abstract: A dicyandiamide crosslinked epoxy prepreg substantially free from dicyandiamide crystals is obtained by subjecting an epoxy composition containing dicyandiamide to elevated temperature to thereby form a substantially prereacted product, adding solvents if desired, desolvating, and then thermally advancing the prereacted product to the desired state of crosslinking to thereby form the prepreg.