公开(公告)号：HU0302872A2

公开(公告)日：2003-12-29

申请号：HU0302872

申请日：2001-11-23

Applicant: IBM

Inventor： CHU JACK OON ,  COOLBAUGH DOUGLAS DUANE ,  DUNN JAMES STUART ,  GREENBERG DAVID ,  HARAME DAVID ,  JAGANNATHAN BASANTH ,  JOHNSON ROBB ALLEN ,  LAUZEROTTI LUOIS ,  SCHONENBERG KATHRYN TURNER ,  WUTHRICH RYAN WAYNE

IPC: H01L21/331 ,  H01L29/737

Abstract: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.