公开(公告)号：JP2008153684A

公开(公告)日：2008-07-03

申请号：JP2008018552

申请日：2008-01-30

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： CHU JACK OON ,  COOLBAUGH DOUGLAS DUANE ,  DUNN JAMES STUART ,  GREENBERG DAVID ,  HARAME DAVID ,  JAGANNATHAN BASANTH ,  JOHNSON ROBB ALLEN ,  LANZEROTTI LOUIS ,  SCHONENBERG KATHRYN TURNER ,  WUTHRICH RYAN WAYNE

IPC: H01L21/331 ,  H01L21/205 ,  H01L29/737

CPC classification number: H01L29/66242 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/1004 ,  H01L29/161 ,  H01L29/7378

Abstract: PROBLEM TO BE SOLVED: To provide a method of forming a SiGe bipolar transistor substantially excluding dislocation defects present between an emitter and collector region.
SOLUTION: This forming method includes the steps of: (a) providing a structure including at least a bipolar device region, wherein the bipolar device region includes at least a first conductive type collector region 52 formed in a semiconductor substrate; (b) making a SiGe base region 54 deposit on the collector region, wherein carbon is continuously grown over the whole collector region and the whole SiGe base region during deposition; and (c) forming the emitter region 56 patterned on the SiGe base region.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种形成SiGe双极晶体管的方法，其基本上排除了发射极和集电极区域之间存在的位错缺陷。 该形成方法包括以下步骤：（a）提供包括至少双极器件区域的结构，其中双极器件区域至少包括形成在半导体衬底中的第一导电类型集电极区域52; （b）使SiGe基区54沉积在集电区上，其中在沉积期间碳在整个集电区和整个SiGe基区连续生长; 和（c）形成在SiGe基区上图案化的发射极区56。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：PL362710A1

公开(公告)日：2004-11-02

申请号：PL36271001

申请日：2001-11-23

Applicant: IBM

Inventor： CHU JACK OON ,  COOLBAUGH DOUGLAS DUANE ,  DUNN JAMES STUART ,  GREENBERG DAVID ,  HARAME DAVID ,  JAGANNATHAN BASANTH ,  JOHNSON ROBB ALLEN ,  LANZEROTTI LOUIS ,  SCHONENBERG KATHRYN TURNER ,  WUTHRICH RYAN WAYNE

IPC: H01L21/331 ,  H01L29/737

Abstract: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.

公开(公告)号：CZ20032066A3

公开(公告)日：2003-11-12

申请号：CZ20032066

申请日：2001-11-23

Applicant: IBM

Inventor： CHU JACK OON ,  COOLBAUGH DOUGLAS DUANE ,  DUNN JAMES STUART ,  GREENBERG DAVID ,  HARAME DAVID ,  JAGANNATHAN BASANTH ,  JOHNSON ROBB ALLEN ,  LANZEROTTI LOUIS ,  SCHONENBERG KATHRYN TURNER ,  WUTHRICH RYAN WAYNE

IPC: H01L21/331 ,  H01L29/737

Abstract: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.

公开(公告)号：PL203317B1

公开(公告)日：2009-09-30

申请号：PL36271001

申请日：2001-11-23

Applicant: IBM

Inventor： CHU JACK OON ,  COOLBAUGH DOUGLAS DUANE ,  DUNN JAMES STUART ,  GREENBERG DAVID ,  HARAME DAVID ,  JAGANNATHAN BASANTH ,  JOHNSON ROBB ALLEN ,  LANZEROTTI LOUIS ,  SCHONENBERG KATHRYN TURNER ,  WUTHRICH RYAN WAYNE

IPC: H01L21/331 ,  H01L29/737

公开(公告)号：HU0302872A2

公开(公告)日：2003-12-29

申请号：HU0302872

申请日：2001-11-23

Applicant: IBM

Inventor： CHU JACK OON ,  COOLBAUGH DOUGLAS DUANE ,  DUNN JAMES STUART ,  GREENBERG DAVID ,  HARAME DAVID ,  JAGANNATHAN BASANTH ,  JOHNSON ROBB ALLEN ,  LAUZEROTTI LUOIS ,  SCHONENBERG KATHRYN TURNER ,  WUTHRICH RYAN WAYNE

IPC: H01L21/331 ,  H01L29/737

Abstract: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.