公开(公告)号：EP1495365A4

公开(公告)日：2009-06-03

申请号：EP03723925

申请日：2003-04-01

Applicant: IBM

Inventor： PFEIFFER DIRK ,  ANGELOPOULOS MARIE ,  BABICH KATHERINA ,  BROCK PHILLIP ,  HUANG WU-SONG ,  MAHOROWALA ARPAN P ,  MEDEIROS DAVID R ,  SOORIYAKUMARAN RATNAM

IPC: G03F7/11 ,  G03F7/004 ,  G03F7/038 ,  G03F7/075 ,  G03F7/09 ,  H01L21/027 ,  G03F7/00 ,  G03F7/26 ,  H01L21/312

CPC classification number: H01L21/0276 ,  G03F7/0045 ,  G03F7/0757 ,  G03F7/091 ,  Y10S430/151

Abstract: Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions of the invention are advantagously useful with shorter wavelenght lithographic processes and/or have minimal residual acid content.

公开(公告)号：JP2005055893A

公开(公告)日：2005-03-03

申请号：JP2004223337

申请日：2004-07-30

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： BABICH KATHERINA ,  MAHOROWALA ARPAN P ,  MEDEIROS DAVID R ,  PFEIFFER DIRK

IPC: G03F7/11 ,  G03C3/00 ,  G03F1/14 ,  G03F7/004 ,  G03F7/075 ,  G03F7/09 ,  G03F7/20 ,  H01L21/00 ,  H01L21/027 ,  H01L21/312 ,  H01L21/3213

CPC classification number: G03F7/091 ,  G03F7/0757 ,  H01L21/0274 ,  H01L21/0276 ,  H01L21/32139

Abstract: PROBLEM TO BE SOLVED: To provide a composition and techniques for processing a semiconductor device, more particularly, to provide an antireflective hardmask composition in one aspect of the invention and to provide a method for processing a semiconductor device in another aspect.
SOLUTION: The composition contains a fully condensed polyhedral oligosilsesquioxane, {RSiO
1.5 }
n , wherein n equals 8; and at least one chromophore moiety and transparent moiety. The method comprises steps of: providing a material layer on a substrate; and forming an antireflective hardmask layer over the material layer. The antireflective hardmask layer comprises a fully condensed polyhedral oligosilsesquioxane, {RSiO
1.5 }
n , wherein n equals 8; and at least one chromophore moiety and transparent moiety.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 解决的问题：提供一种用于处理半导体器件的组合物和技术，更具体地，提供在本发明的一个方面中的抗反射硬掩模组​​合物，并提供另一方面的半导体器件的处理方法。 解决方案：组合物含有完全缩合的多面体寡聚倍半硅氧烷，其中n等于8; 和至少一个发色团部分和透明部分。 该方法包括以下步骤：在衬底上提供材料层; 以及在所述材料层上形成抗反射硬掩模层。 抗反射硬掩模层包括完全冷凝的多面体低聚倍半硅氧烷，其中n等于8; 和至少一个发色团部分和透明部分。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004111958A

公开(公告)日：2004-04-08

申请号：JP2003310664

申请日：2003-09-02

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： WISE RICHARD S ,  DESHPANDE SADANAND V ,  YAN WENDY ,  ALLEN SCOTT D ,  MAHOROWALA ARPAN P

IPC: H01L21/3065 ,  G03F7/09 ,  H01L21/308 ,  H01L21/311 ,  H01L21/768

CPC classification number: G03F7/091 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76802

Abstract: PROBLEM TO BE SOLVED: To provide a method of removing carbon from a TERA [tunable etch-resistant ARC: adjustable etch-resistant ARC (ARC represents an anti-reflection coating)] layer that is provided on a semiconductor substrate, or stripping the TERA layer.
SOLUTION: A TERA layer 26 is exposed to a plasma containing an effective dose of nitrogen, and optionally oxygen or fluorine. Moreover, the method is compatible with a fluorine based etching system. Thus, the method can be executed in the same system as other etching processes. For example, the method can be executed in the same system as that of plasma etching having fluorine of an oxide or nitride as a base. Moreover, this method includes the method of stripping the TERA layer 26 in situ, and etching an oxide layer 24 and etching a nitride layer 22 in the same etching system. In order to avoid that damages are caused to the oxide layer 24 or the nitride layer 22 below the TERA layer 26, and give good selectivity, execution is made with low ion energy.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2005115380A

公开(公告)日：2005-04-28

申请号：JP2004291846

申请日：2004-10-04

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ANGELOPOULOS MARIE ,  HUANG WU-SONG ,  MAHOROWALA ARPAN P ,  MOREAU WAYNE ,  PFEIFFER DIRK ,  RATONAMU SOORIYAKUMARAN

IPC: G03F7/11 ,  G03F1/00 ,  G03F7/00 ,  G03F7/004 ,  G03F7/075 ,  G03F7/09 ,  G03F7/20 ,  H01L21/027

CPC classification number: G03F7/0754 ,  G03F7/0045 ,  G03F7/091 ,  Y10S430/106 ,  Y10S430/115

Abstract: PROBLEM TO BE SOLVED: To provide a new and improved polymer composition which can be used for photolithography and has similar etching properties to those of Si.
SOLUTION: An antireflection composition characterized in the presence of a Si-containing polymer having a pendant chromophore moiety is regarded as an antireflection coating/hard mask composition useful in lithographic processes. The composition provides significant optical characteristics, mechanical properties and etching selectivity and is applicable by a spin-on coating method. The composition is particularly useful in lithographic processes used to configure an underlay material layer on a substrate, in particular, a metal layer or a semiconductor layer.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供可用于光刻的新的和改进的聚合物组合物，并具有与Si相似的蚀刻性能。 解决方案：特征在于存在具有侧发色团部分的含Si聚合物的抗反射组合物被认为是可用于光刻工艺的抗反射涂层/硬掩模组合物。 该组合物提供显着的光学特性，机械性能和蚀刻选择性，并且可以通过旋涂法来应用。 该组合物在用于在衬底，特别是金属层或半导体层上构造衬底材料层的光刻工艺中特别有用。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005070776A

公开(公告)日：2005-03-17

申请号：JP2004237692

申请日：2004-08-17

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： BABICH KATHERINA ,  HUANG ELBERT ,  MAHOROWALA ARPAN P ,  MEDEIROS DAVID R ,  PFEIFFER DIRK ,  TEMPLE KAREN

IPC: G03F7/11 ,  G03F7/00 ,  G03F7/004 ,  G03F7/075 ,  G03F7/09 ,  H01L21/027 ,  H01L21/32 ,  H01L21/3205 ,  H01L21/3213

CPC classification number: G03F7/091 ,  G03F7/0045 ,  G03F7/0757 ,  H01L21/0274 ,  H01L21/32139 ,  Y10S430/106 ,  Y10S430/115 ,  Y10S430/143 ,  Y10S430/151

Abstract: PROBLEM TO BE SOLVED: To provide an antireflective hardmask composition and a method for using the antireflective hardmask composition for processing a semiconductor device.
SOLUTION: The antireflective hardmask composition for lithography is obtained. The antireflective hardmask composition contains a carbosilane polymer backbone comprising at least one kind of chromophore moiety and at least one kind of transparent moiety and a crosslinking component. The method for processing a semiconductor device is provided. The method comprises steps of: providing a material layer on a substrate; and forming an antireflective hardmask layer over the material layer. The antireflective hardmask layer contains a carbosilane polymer backbone comprising at least one kind of chromophore moiety and at least one kind of transparent moiety and a crosslinking component.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种抗反射硬掩模组​​合物和使用用于加工半导体器件的抗反射硬掩模组​​合物的方法。 解决方案：获得用于光刻的抗反射硬掩模组​​合物。 防反射硬质组合物含有包含至少一种发色团部分和至少一种透明部分和交联组分的碳硅烷聚合物主链。 提供了一种用于处理半导体器件的方法。 该方法包括以下步骤：在衬底上提供材料层; 以及在所述材料层上形成抗反射硬掩模层。 抗反射硬掩模层包含含有至少一种发色团部分和至少一种透明部分和交联组分的碳硅烷聚合物主链。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：AU2003230825A1

公开(公告)日：2003-11-03

申请号：AU2003230825

申请日：2003-04-01

Applicant: IBM

Inventor： ANGELOPOULOS MARIE ,  BABICH KATHERINA ,  BROCK PHILLIP ,  HUANG WU-SONG ,  MAHOROWALA ARPAN P ,  MEDEIROS DAVID R ,  SOORIYAKUMARAN RATNAM ,  PFEIFFER DIRK

IPC: G03F7/11 ,  G03F7/004 ,  G03F7/038 ,  G03F7/075 ,  G03F7/09 ,  H01L21/027 ,  G03F7/00 ,  G03F7/26

Abstract: Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions of the invention are advantageously useful with shorter wavelength lithographic processes and/or have minimal residual acid content.