公开(公告)号：EP1495365A4

公开(公告)日：2009-06-03

申请号：EP03723925

申请日：2003-04-01

Applicant: IBM

Inventor： PFEIFFER DIRK ,  ANGELOPOULOS MARIE ,  BABICH KATHERINA ,  BROCK PHILLIP ,  HUANG WU-SONG ,  MAHOROWALA ARPAN P ,  MEDEIROS DAVID R ,  SOORIYAKUMARAN RATNAM

IPC: G03F7/11 ,  G03F7/004 ,  G03F7/038 ,  G03F7/075 ,  G03F7/09 ,  H01L21/027 ,  G03F7/00 ,  G03F7/26 ,  H01L21/312

CPC classification number: H01L21/0276 ,  G03F7/0045 ,  G03F7/0757 ,  G03F7/091 ,  Y10S430/151

Abstract: Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions of the invention are advantagously useful with shorter wavelenght lithographic processes and/or have minimal residual acid content.

公开(公告)号：EP1716450A4

公开(公告)日：2007-06-27

申请号：EP04710274

申请日：2004-02-11

Applicant: IBM

Inventor： MOREAU WAYNE M ,  ANGELOPOULOS MARIE ,  HUANG WU-SONG ,  MEDEIROS DAVID R ,  PETRILLO KAREN E

IPC: G03C1/73 ,  G03F1/08 ,  G03F7/004 ,  G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/40

CPC classification number: G03F7/0045 ,  G03F1/78 ,  G03F7/0392 ,  G03F7/40 ,  Y10S430/143

Abstract: Resist compositions having good footing properties even on difficult substrates are obtained by using a combination of base additives including a room temperature solid base, and a liquid low vapor pressure base. The compositions are especially useful on metal substrates such as chromium-containing layers commonly used in mask-making.

Abstract translation: 抗蚀剂甚至在困难的基板良好的基础性质的组合物通过使用包括室温下为固体的基础上，和液体低蒸气压碱碱添加剂的组合获得。 该组合物的爱在金属衬底上是特别有用的：如在掩模制造常用的含铬层。

公开(公告)号：JP2005070776A

公开(公告)日：2005-03-17

申请号：JP2004237692

申请日：2004-08-17

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： BABICH KATHERINA ,  HUANG ELBERT ,  MAHOROWALA ARPAN P ,  MEDEIROS DAVID R ,  PFEIFFER DIRK ,  TEMPLE KAREN

IPC: G03F7/11 ,  G03F7/00 ,  G03F7/004 ,  G03F7/075 ,  G03F7/09 ,  H01L21/027 ,  H01L21/32 ,  H01L21/3205 ,  H01L21/3213

CPC classification number: G03F7/091 ,  G03F7/0045 ,  G03F7/0757 ,  H01L21/0274 ,  H01L21/32139 ,  Y10S430/106 ,  Y10S430/115 ,  Y10S430/143 ,  Y10S430/151

Abstract: PROBLEM TO BE SOLVED: To provide an antireflective hardmask composition and a method for using the antireflective hardmask composition for processing a semiconductor device.
SOLUTION: The antireflective hardmask composition for lithography is obtained. The antireflective hardmask composition contains a carbosilane polymer backbone comprising at least one kind of chromophore moiety and at least one kind of transparent moiety and a crosslinking component. The method for processing a semiconductor device is provided. The method comprises steps of: providing a material layer on a substrate; and forming an antireflective hardmask layer over the material layer. The antireflective hardmask layer contains a carbosilane polymer backbone comprising at least one kind of chromophore moiety and at least one kind of transparent moiety and a crosslinking component.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种抗反射硬掩模组​​合物和使用用于加工半导体器件的抗反射硬掩模组​​合物的方法。 解决方案：获得用于光刻的抗反射硬掩模组​​合物。 防反射硬质组合物含有包含至少一种发色团部分和至少一种透明部分和交联组分的碳硅烷聚合物主链。 提供了一种用于处理半导体器件的方法。 该方法包括以下步骤：在衬底上提供材料层; 以及在所述材料层上形成抗反射硬掩模层。 抗反射硬掩模层包含含有至少一种发色团部分和至少一种透明部分和交联组分的碳硅烷聚合物主链。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005055893A

公开(公告)日：2005-03-03

申请号：JP2004223337

申请日：2004-07-30

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： BABICH KATHERINA ,  MAHOROWALA ARPAN P ,  MEDEIROS DAVID R ,  PFEIFFER DIRK

IPC: G03F7/11 ,  G03C3/00 ,  G03F1/14 ,  G03F7/004 ,  G03F7/075 ,  G03F7/09 ,  G03F7/20 ,  H01L21/00 ,  H01L21/027 ,  H01L21/312 ,  H01L21/3213

CPC classification number: G03F7/091 ,  G03F7/0757 ,  H01L21/0274 ,  H01L21/0276 ,  H01L21/32139

Abstract: PROBLEM TO BE SOLVED: To provide a composition and techniques for processing a semiconductor device, more particularly, to provide an antireflective hardmask composition in one aspect of the invention and to provide a method for processing a semiconductor device in another aspect.
SOLUTION: The composition contains a fully condensed polyhedral oligosilsesquioxane, {RSiO
1.5 }
n , wherein n equals 8; and at least one chromophore moiety and transparent moiety. The method comprises steps of: providing a material layer on a substrate; and forming an antireflective hardmask layer over the material layer. The antireflective hardmask layer comprises a fully condensed polyhedral oligosilsesquioxane, {RSiO
1.5 }
n , wherein n equals 8; and at least one chromophore moiety and transparent moiety.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 解决的问题：提供一种用于处理半导体器件的组合物和技术，更具体地，提供在本发明的一个方面中的抗反射硬掩模组​​合物，并提供另一方面的半导体器件的处理方法。 解决方案：组合物含有完全缩合的多面体寡聚倍半硅氧烷，其中n等于8; 和至少一个发色团部分和透明部分。 该方法包括以下步骤：在衬底上提供材料层; 以及在所述材料层上形成抗反射硬掩模层。 抗反射硬掩模层包括完全冷凝的多面体低聚倍半硅氧烷，其中n等于8; 和至少一个发色团部分和透明部分。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005018063A

公开(公告)日：2005-01-20

申请号：JP2004183531

申请日：2004-06-22

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： MEDEIROS DAVID R ,  HUANG WU-SONG ,  WALLRAFF GREGORY M ,  HINSBERG BILL ,  HOULE FRANCES

IPC: G03F7/039 ,  G03F7/00 ,  G03F7/20 ,  G03F7/26 ,  G03F7/38 ,  G03F7/40 ,  H01L21/027

CPC classification number: G03F7/265 ,  G03F7/38

Abstract: PROBLEM TO BE SOLVED: To provide a lithographic imaging method for use in the manufacture of an integrated circuit composed of patterned structure or other similarly patterned structures of very high resolution, the patterned structure having especially a feature with a half pitch of about 50 nm or less.
SOLUTION: Lithographic imaging of a 50 nm (or less) half-pitch feature in a chemically amplified resist (usually used in the manufacture of an integrated circuit) is made possible by the use of reduced temperature post-exposure processing and a low activation energy chemically amplified resist. The post-exposure processing preferably involves ambient to moderately elevated temperature and the presence of a deprotection reaction-dependent co-reactant (e.g. water).
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供一种平版印刷成像方法，用于制造由图案化结构或其它具有非常高分辨率的类似图案化结构组成的集成电路，该图案化结构特别地具有半间距为约 50nm以下。 解决方案：化学放大型抗蚀剂（通常用于制造集成电路）中的50nm（或更少）半间距特征的平版印刷成像可以通过使用降低温度的曝光后处理和 低活化能化学放大抗蚀剂。 曝光后处理优选包括环境温度至适度升高的温度和脱保护反应依赖性共反应物（例如水）的存在。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2002053613A

公开(公告)日：2002-02-19

申请号：JP2001180444

申请日：2001-06-14

Applicant: IBM

Inventor： AVIRAM ARI ,  C RICHARD GUARNIERI ,  HUANG WU-SONG ,  KWONG RANEE W ,  MEDEIROS DAVID R

IPC: C08F8/42 ,  C08F12/22 ,  C08F257/02 ,  C08L51/00 ,  C08L51/08 ,  G03F7/038 ,  G03F7/039 ,  G03F7/075 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065

Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive composition having improved dry etching resistance. SOLUTION: This composition comprising a polymer having at least one kind of silicon, germanium and tin, and a protective group grafted on the skeleton of the polymer is useful as a resist, has a sensitivity to the radiation for forming an image, and exhibits an enhanced resistance to reactive ion etching.

公开(公告)号：WO2004053594A3

公开(公告)日：2005-11-24

申请号：PCT/US0239048

申请日：2002-12-05

Applicant: IBM ,  HUANG WU-SONG ,  LI WENJIE ,  MOREAU WAYNE ,  MEDEIROS DAVID R ,  PETRILLO KAREN E ,  LANG ROTBERT N ,  ANGELOPOULOS MARIE

Inventor： HUANG WU-SONG ,  LI WENJIE ,  MOREAU WAYNE ,  MEDEIROS DAVID R ,  PETRILLO KAREN E ,  LANG ROTBERT N ,  ANGELOPOULOS MARIE

IPC: G03F7/004 ,  G03F7/039 ,  G03F7/30

CPC classification number: G03F7/0045 ,  G03F7/0392

Abstract: The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well.

Abstract translation: 具有酸敏感成像聚合物和辐射敏感性酸产生剂组分的抗蚀剂组合物包含：（i）选自溶解抑制酸产生剂的第一辐射敏感性酸产生剂，和（ii）选择的第二辐射敏感酸产生剂 由不受保护的酸性官能化酸产生剂和酸不稳定基团保护的酸性官能化辐射敏感酸发生剂组成的组; 能够形成适用于EPL，EUV，软X射线和其他低能量光刻成像应用的高灵敏度抗蚀剂。 抗蚀剂组合物也可用于其它平版印刷工艺。

公开(公告)号：JP2007036291A

公开(公告)日：2007-02-08

申请号：JP2006290010

申请日：2006-10-25

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： GRILL ALFRED ,  MEDEIROS DAVID R ,  PATEL VISHNUBHAI V

IPC: H01L21/312 ,  H01L21/768 ,  C23C16/40 ,  H01L21/316 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/02126 ,  C23C16/401 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31633 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a thermally stable low dielectric constant material having a low internal stress and a dielectric constant of not higher than 2.8. SOLUTION: A low dielectric constant material has a matrix made of Si, C, O, and H; a plurality of nanometre-scale holes, and a dielectric constant of not higher than 2.8. The low dielectric constant material has an FTIR spectrum which is divided into two peaks in absorption band of Si-O between 1,000 cm -1 and 1,100 cm -1 , and has not absorption peak of Si-H between 2,150 cm -1 and 2,250 cm -1 . COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供具有低内应力和介电常数不高于2.8的热稳定性低介电常数材料。

解决方案：低介电常数材料具有由Si，C，O和H制成的基体; 多个纳米级孔，介电常数不高于2.8。 低介电常数材料具有FTIR光谱，其在1000cm -1 SP1 -1和-100cm -1 之间的Si-O的吸收带中被分成两个峰，并且没有 2,150厘米 -1 和2,250厘米 -1之间的Si-H的吸收峰。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2003309308A

公开(公告)日：2003-10-31

申请号：JP2003062285

申请日：2003-03-07

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーション

Inventor： DEHAVEN PATRICK W ,  MEDEIROS DAVID R ,  MITZI DAVID B

IPC: H01L51/05 ,  C23C2/00 ,  H01L21/00 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786 ,  H01L51/00 ,  H01L51/30 ,  H01L51/40

CPC classification number: H01L51/0003 ,  H01L51/0002 ,  H01L51/0025 ,  H01L51/0077 ,  H01L51/0512 ,  Y10T428/1471

Abstract: PROBLEM TO BE SOLVED: To provide an inexpensive organic/inorganic hybrid material for melting processing which can be used for various use, including a light emission layer and a charge transfer layer of a flat panel display, a non-linear light/ photoconductive device, a chemical sensor, and an organic/inorganic light emitting diode, and a channel layer of an organic/inorganic thin film transistor and an organic/inorganic field-effect transistor. SOLUTION: The method, which is for manufacturing the organic/inorganic hybrid material for melting processing and which contains a step for maintaining the solid organic/inorganic hybrid material, at a temperature higher than the melting point of the organic/inorganic hybrid material but lower than its decomposition temperature, for a period of time sufficient to form a uniformly melt article and the step after that which cools down the uniformly melt article at ambient temperature, with sufficient conditions to generate the organic/ inorganic hybrid material for melting processing, is provided. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：为了提供可用于各种用途的廉价有机/无机混合材料用于熔融加工，包括平板显示器的发光层和电荷转移层，非线性光/ 光电导装置，化学传感器和有机/无机发光二极管，以及有机/无机薄膜晶体管和有机/无机场效应晶体管的沟道层。 解决方案：在高于有机/无机混合物的熔点的温度下，制造用于熔融加工的有机/无机混合材料的方法，其含有保持固体有机/无机混合材料的步骤 材料，但低于其分解温度，持续一段时间足以形成均匀熔化的制品，以及随后的步骤，其在环境温度下冷却均匀熔融制品，具有足够的条件以产生用于熔融加工的有机/无机混合材料 ，被提供。 版权所有（C）2004，JPO

公开(公告)号：WO2005088393A8

公开(公告)日：2006-09-14

申请号：PCT/US2004004144

申请日：2004-02-11

Applicant: IBM ,  MOREAU WAYNE M ,  ANGELOPOULOS MARIE ,  HUANG WU-SONG ,  MEDEIROS DAVID R ,  PETRILLO KAREN E

Inventor： MOREAU WAYNE M ,  ANGELOPOULOS MARIE ,  HUANG WU-SONG ,  MEDEIROS DAVID R ,  PETRILLO KAREN E

IPC: G03C1/73 ,  G03F1/08 ,  G03F7/004 ,  G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/40

CPC classification number: G03F7/0045 ,  G03F1/78 ,  G03F7/0392 ,  G03F7/40 ,  Y10S430/143

Abstract: Resist compositions having good footing properties even on difficult substrates are obtained by using a combination of base additives including a room temperature solid base, and a liquid low vapor pressure base. The compositions are especially useful on metal substrates such as chromium-containing layers commonly used in mask-making.

Abstract translation: 通过使用包括室温固体碱和液体低蒸气压基料的基础添加剂的组合，可获得即使在困难的基材上也具有良好基础性能的抗蚀剂组合物。 该组合物在通常用于掩模制造的金属基材如含铬层上特别有用。