公开(公告)号：EP1495365A4

公开(公告)日：2009-06-03

申请号：EP03723925

申请日：2003-04-01

Applicant: IBM

Inventor： PFEIFFER DIRK ,  ANGELOPOULOS MARIE ,  BABICH KATHERINA ,  BROCK PHILLIP ,  HUANG WU-SONG ,  MAHOROWALA ARPAN P ,  MEDEIROS DAVID R ,  SOORIYAKUMARAN RATNAM

IPC: G03F7/11 ,  G03F7/004 ,  G03F7/038 ,  G03F7/075 ,  G03F7/09 ,  H01L21/027 ,  G03F7/00 ,  G03F7/26 ,  H01L21/312

CPC classification number: H01L21/0276 ,  G03F7/0045 ,  G03F7/0757 ,  G03F7/091 ,  Y10S430/151

Abstract: Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions of the invention are advantagously useful with shorter wavelenght lithographic processes and/or have minimal residual acid content.

公开(公告)号：EP1546813A4

公开(公告)日：2006-08-30

申请号：EP03815294

申请日：2003-09-11

Applicant: IBM

Inventor： KHOJASTEH MAHMOUD M ,  WONG RANEE W ,  CHEN KUANG-JUNG ,  VARANASI PUSHKARA RAO ,  ALLEN ROBERT D ,  BROCK PHILLIP ,  HOULE FRANCES ,  SOORIYAKUMARAN RATNAM

IPC: G03F7/38 ,  G03F7/039 ,  G03F7/075 ,  G03F7/09

CPC classification number: G03F7/094 ,  G03F7/0397 ,  G03F7/0758 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115

Abstract: The silicon-containing resist compositions which have low silicon outgassing and high resolution lithographic performance, especially in bilayer or multilayer lithographic applications using 193 nm or shorter wavelength imaging radiation are enabled by the presence of an imaging polymer having silicon-containing, non-acid-labile pendant groups. The resist compositions of the invention are preferably further characterized by the substantial absence of silicon-containing acid-labile moieties.

公开(公告)号：JP2004046098A

公开(公告)日：2004-02-12

申请号：JP2003128938

申请日：2003-05-07

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ALLEN ROBERT DAVID ,  GREGORY BUREITA ,  BROCK PHILLIP ,  DIPIETRO RICHARD A ,  FENZEL-ALEXANDER DEBRA ,  LARSON CARL ,  MEDEIROS DAVID ,  PFEIFFER DIRK ,  SOORIYAKUMARAN RATNAM ,  TRUONG HOA D ,  WALLRAFF GREGORY M

IPC: C08F20/22 ,  C08F220/28 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

CPC classification number: C08F220/22 ,  C08F220/28 ,  G03F7/0046 ,  G03F7/0382 ,  Y10S430/108

Abstract: PROBLEM TO BE SOLVED: To provide a photoresist composition containing a polymer having at least one methacrylate monomer and to provide a method of pattering a substrate using the photoresist composition. SOLUTION: The photoresist composition contains a methacrylate monomer of formula 1 where R 1 represents hydrogen (H), a linear or branched 1-20C alkyl group or a semi- or perfluorinated linear or branched 1-20C alkyl group; where R 2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF 3 ) group bonded to each carbon of the substituted aliphatic group or a substituted or unsubstituted aromatic group; and where R 3 represents hydrogen (H), methyl (CH 3 ), trifluoromethyl (CF 3 ), difluoromethyl (CHF 2 ) or fluoromethyl (CH 2 F). COPYRIGHT: (C)2004,JPO

公开(公告)号：AT456822T

公开(公告)日：2010-02-15

申请号：AT06778316

申请日：2006-08-21

Applicant: IBM

Inventor： ALLEN ROBERT ,  DIPIETRO RICHARD ,  TRUONG HOA ,  BROCK PHILLIP ,  SOORIYAKUMARAN RATNAM

IPC: G03F7/004 ,  C07J9/00 ,  C07J17/00 ,  G03F7/039

Abstract: A dissolution modification agent suitable for use in a photoresist composition including a polymer, a photoacid generator and casting solvent. The dissolution modification agent is insoluble in aqueous alkaline developer and inhibits dissolution of the polymer in the developer until acid is generated by the photoacid generator being exposed to actinic radiation, whereupon the dissolution modifying agent, at a suitable temperature, becomes soluble in the developer and allows the polymer to dissolve in the developer. The DMAs are glucosides, cholates, citrates and adamantanedicarboxylates protected with acid-labile ethoxyethyl, tetrahydrofuranyl, and angelicalactonyl groups.

公开(公告)号：DE69013693T2

公开(公告)日：1995-05-04

申请号：DE69013693

申请日：1990-10-15

Applicant: IBM

Inventor： BAUM THOMAS ,  BROCK PHILLIP ,  DAWSON DANIEL

IPC: C07F1/12 ,  C07F1/00

Abstract: Dialkyl gold(III) beta -diketonates are synthesized in a two-step, one-pot process using a gold trihalide, an alkyl lithium compound and a beta -diketone.

公开(公告)号：AT474249T

公开(公告)日：2010-07-15

申请号：AT06735757

申请日：2006-02-22

Applicant: IBM

Inventor： ALLEN ROBERT ,  BROCK PHILLIP ,  GIL DARIO ,  HINSBERG WILLIAM ,  LARSON CARL ,  SUNDBERG LINDA ,  WALLRAFF GREGORY

IPC: G03F7/11 ,  G03F7/20

Abstract: A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises at least one solvent and a polymer which has a dissolution rate of at least 3000 Å/second in aqueous alkaline developer. The polymer contains a hexafluoroalcohol monomer unit comprising one of the following two structures: wherein n is an integer. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.

公开(公告)号：AU2003303304A1

公开(公告)日：2004-08-23

申请号：AU2003303304

申请日：2003-09-11

Applicant: IBM

Inventor： WONG RANEE W ,  CHEN KUANG-JUNG ,  VARANASI PUSHKARA RAO ,  ALLEN ROBERT D ,  BROCK PHILLIP ,  HOULE FRANCES ,  SOORIYAKUMARAN RATNAM ,  KHOJASTEH MAHMOUD M

IPC: G03F7/039 ,  G03F7/075 ,  G03F7/09 ,  G03F7/38

Abstract: The silicon-containing resist compositions which have low silicon outgassing and high resolution lithographic performance, especially in bilayer or multilayer lithographic applications using 193 nm or shorter wavelength imaging radiation are enabled by the presence of an imaging polymer having silicon-containing, non-acid-labile pendant groups. The resist compositions of the invention are preferably further characterized by the substantial absence of silicon-containing acid-labile moieties.

公开(公告)号：AU2003230825A1

公开(公告)日：2003-11-03

申请号：AU2003230825

申请日：2003-04-01

Applicant: IBM

Inventor： ANGELOPOULOS MARIE ,  BABICH KATHERINA ,  BROCK PHILLIP ,  HUANG WU-SONG ,  MAHOROWALA ARPAN P ,  MEDEIROS DAVID R ,  SOORIYAKUMARAN RATNAM ,  PFEIFFER DIRK

IPC: G03F7/11 ,  G03F7/004 ,  G03F7/038 ,  G03F7/075 ,  G03F7/09 ,  H01L21/027 ,  G03F7/00 ,  G03F7/26

Abstract: Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions of the invention are advantageously useful with shorter wavelength lithographic processes and/or have minimal residual acid content.

公开(公告)号：DE69013693D1

公开(公告)日：1994-12-01

申请号：DE69013693

申请日：1990-10-15

Applicant: IBM

Inventor： BAUM THOMAS ,  BROCK PHILLIP ,  DAWSON DANIEL

IPC: C07F1/12 ,  C07F1/00

Abstract: Dialkyl gold(III) beta -diketonates are synthesized in a two-step, one-pot process using a gold trihalide, an alkyl lithium compound and a beta -diketone.