公开(公告)号：CA1089113A

公开(公告)日：1980-11-04

申请号：CA298328

申请日：1978-03-02

Applicant: IBM

Inventor： FORNERIS JOHN L ,  HICKS WILLIAM W ,  KELLER JOHN H ,  MCKENNA CHARLES M ,  SEIRMARCO JAMES A

IPC: H01J37/20 ,  G01Q60/00 ,  H01J37/02 ,  H01J37/244 ,  H01J37/317 ,  H01L21/265

Abstract: ION IMPLANTATION APPARATUS FOR CONTROLLING THE SURFACE POTENTIAL OF A TARGET SURFACE In an ion beam apparatus a structure for controlling the surface potential of the target comprising an electron source adjacent to the beam for providing electrons to the beam and means between the target and source for inhibiting rectilinear radiations, i.e., electron and other particle and photon radiations between said source and said target. This prevents heating of the target by the electron source and cross-contamination between the source and the target. A further structure is provided for the measurement of the ion beam current while controlling said surface potential of the target which includes: walls adjacent to and electrically insulated from the target and surrounding the beam whereby the walls and target provide a Faraday Cage, means for introducing variable quantities or electrons into the beam within the Faraday Cage, means for measuring the target current, means for combining and measuring the target and wall currents to provide said ion beam current measurement and means for varying the quantities of introduced electrons to control the target current and thereby the target surface potential.

公开(公告)号：CA1088218A

公开(公告)日：1980-10-21

申请号：CA299581

申请日：1978-03-22

Applicant: IBM

Inventor： MCKENNA CHARLES M ,  MUELLER WOLFGANG F

IPC: H01J37/20 ,  H01J37/02 ,  H01J37/244 ,  H01J37/317 ,  H01L21/265 ,  H01J37/00

Abstract: ION IMPLANTATION APPARATUS WITH A COOLED STRUCTURE CONTROLLING THE SURFACE POTENTIAL OF A TARGET SURFACE In an ion beam apparatus a structure for controlling the surface potential of the target comprising an electron source adjacent to the beam for providing electrons to the beam and means between the target and source for inhibiting rectilinear radiations, i.e., electron and other particle and photon radiations between said source and said target. This prevents heating of the target by the electron source and cross-contamination between the source and the target. The apparatus further includes means for maintaining said shield means at a lower temperature than said target. A further structure is provided for the measurement of the ion beam current while controlling said surface potential of the target which includes: walls adjacent to and electrically insulated from the target and surrounding the beam whereby the walls and target provide a Faraday Cage, means for introducing variable quantities of electrons into the beam within the Faraday Cage, means for measuring the target current, means for combining and measuring the target and wall currents to provide said ion beam current measurement and means for varying the quantities of introduced electrons to control the target current and thereby the target surface potential. Likewise, this apparatus further includes means for maintaining said shielding means at a temperature lower than said target.

公开(公告)号：CA1111801A

公开(公告)日：1981-11-03

申请号：CA311728

申请日：1978-09-21

Applicant: IBM

Inventor： KELLER JOHN H ,  MCKENNA CHARLES M

IPC: H01J27/14 ,  H01J37/08 ,  H01J37/305 ,  H01L21/302 ,  C23C15/00

Abstract: NEGATIVE ION EXTRACTOR Process and apparatus for use in extracting negative ions from a plasma which is particularly useful in reactive ion etching of metals, silicon and oxides and nitrides of silicon in the manufacture of semiconductor devices. A magnetic field is employed in the apparatus and, herein, is created by a novel grid, through which negative ions pass to a surface, such as one to be etched, while free electrons are prevented from passing through the grid and out of the plasma. The novel process utilizes negative ions which have a large fraction in the atomic state.