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    HIGH SENSITIVITY RESIST COMPOSITIONS FOR ELECTRON-BASED LITHOGRAPHY
    1.
    发明公开
    HIGH SENSITIVITY RESIST COMPOSITIONS FOR ELECTRON-BASED LITHOGRAPHY 有权
    E E E EN E E E E E E E E E E E

    公开(公告)号：EP1586005A4

    公开(公告)日：2009-05-13

    申请号：EP02786917

    申请日：2002-12-05

    Applicant: IBM

    Inventor： HUANG WU-SONG ,  LI WENJIE ,  MOREAU WAYNE ,  MEDEIROS DAVID E ,  PETRILLO KAREN E ,  LANG ROTBERT N ,  ANGELOPOULOS MARIE

    IPC: G03F7/004 ,  G03F7/039 ,  G03F7/30

    CPC classification number: G03F7/0045 ,  G03F7/0392

    Abstract: The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well.

    High sensitivity resist composition for electron-based lithography
    2.
    发明专利
    High sensitivity resist composition for electron-based lithography 有权
    用于电子光刻的高灵敏度组合物

    公开(公告)号：JP2007219545A

    公开(公告)日：2007-08-30

    申请号：JP2007116438

    申请日：2007-04-26

    Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

    Inventor： HUANG WU-SONG ,  LI WENJIE ,  MOREAU WAYNE ,  MEDEIROS DAVID E ,  PETRILLO KAREN E ,  LANG ROBERT N ,  ANGELOPOULOS MARIE

    IPC: G03F7/039 ,  G03F7/004 ,  H01L21/027

    Abstract: PROBLEM TO BE SOLVED: To provide a resist composition comprising an acid-sensitive imaging polymer and a radiation-sensitive acid generator component.
    SOLUTION: The resist composition contains (i) a first radiation-sensitive acid generator selected from the group consisting of dissolution inhibiting acid generators and (ii) a second radiation-sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group protected acidic group-functionalized radiation-sensitive acid generators, and enables formation of a highly sensitive resist suitable for use in EPL or EUV, soft X-ray and another low energy intensity lithographic imaging applications. The resist composition is useful in other lithography processes as well.
    COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：提供包含酸敏感成像聚合物和辐射敏感酸产生剂组分的抗蚀剂组合物。 抗蚀剂组合物包含（i）选自溶解抑制酸发生剂的第一辐射敏感性酸产生剂和（ii）选自下组的第二辐射敏感性酸产生剂：未保护的酸性基团 - 官能化酸产生剂和酸不稳定基团保护的酸性官能化辐射敏感酸发生剂，并且能够形成适用于EPL或EUV，软X射线和另一种低能量光刻成像应用的高灵敏度抗蚀剂。 抗蚀剂组合物也用于其它光刻工艺。 版权所有（C）2007，JPO＆INPIT

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