公开(公告)号：EP1586005A4

公开(公告)日：2009-05-13

申请号：EP02786917

申请日：2002-12-05

Applicant: IBM

Inventor： HUANG WU-SONG ,  LI WENJIE ,  MOREAU WAYNE ,  MEDEIROS DAVID E ,  PETRILLO KAREN E ,  LANG ROTBERT N ,  ANGELOPOULOS MARIE

IPC: G03F7/004 ,  G03F7/039 ,  G03F7/30

CPC classification number: G03F7/0045 ,  G03F7/0392

Abstract: The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well.

公开(公告)号：JP2005115380A

公开(公告)日：2005-04-28

申请号：JP2004291846

申请日：2004-10-04

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ANGELOPOULOS MARIE ,  HUANG WU-SONG ,  MAHOROWALA ARPAN P ,  MOREAU WAYNE ,  PFEIFFER DIRK ,  RATONAMU SOORIYAKUMARAN

IPC: G03F7/11 ,  G03F1/00 ,  G03F7/00 ,  G03F7/004 ,  G03F7/075 ,  G03F7/09 ,  G03F7/20 ,  H01L21/027

CPC classification number: G03F7/0754 ,  G03F7/0045 ,  G03F7/091 ,  Y10S430/106 ,  Y10S430/115

Abstract: PROBLEM TO BE SOLVED: To provide a new and improved polymer composition which can be used for photolithography and has similar etching properties to those of Si.
SOLUTION: An antireflection composition characterized in the presence of a Si-containing polymer having a pendant chromophore moiety is regarded as an antireflection coating/hard mask composition useful in lithographic processes. The composition provides significant optical characteristics, mechanical properties and etching selectivity and is applicable by a spin-on coating method. The composition is particularly useful in lithographic processes used to configure an underlay material layer on a substrate, in particular, a metal layer or a semiconductor layer.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供可用于光刻的新的和改进的聚合物组合物，并具有与Si相似的蚀刻性能。 解决方案：特征在于存在具有侧发色团部分的含Si聚合物的抗反射组合物被认为是可用于光刻工艺的抗反射涂层/硬掩模组合物。 该组合物提供显着的光学特性，机械性能和蚀刻选择性，并且可以通过旋涂法来应用。 该组合物在用于在衬底，特别是金属层或半导体层上构造衬底材料层的光刻工艺中特别有用。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2007219545A

公开(公告)日：2007-08-30

申请号：JP2007116438

申请日：2007-04-26

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： HUANG WU-SONG ,  LI WENJIE ,  MOREAU WAYNE ,  MEDEIROS DAVID E ,  PETRILLO KAREN E ,  LANG ROBERT N ,  ANGELOPOULOS MARIE

IPC: G03F7/039 ,  G03F7/004 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a resist composition comprising an acid-sensitive imaging polymer and a radiation-sensitive acid generator component.
SOLUTION: The resist composition contains (i) a first radiation-sensitive acid generator selected from the group consisting of dissolution inhibiting acid generators and (ii) a second radiation-sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group protected acidic group-functionalized radiation-sensitive acid generators, and enables formation of a highly sensitive resist suitable for use in EPL or EUV, soft X-ray and another low energy intensity lithographic imaging applications. The resist composition is useful in other lithography processes as well.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供包含酸敏感成像聚合物和辐射敏感酸产生剂组分的抗蚀剂组合物。 抗蚀剂组合物包含（i）选自溶解抑制酸发生剂的第一辐射敏感性酸产生剂和（ii）选自下组的第二辐射敏感性酸产生剂：未保护的酸性基团 - 官能化酸产生剂和酸不稳定基团保护的酸性官能化辐射敏感酸发生剂，并且能够形成适用于EPL或EUV，软X射线和另一种低能量光刻成像应用的高灵敏度抗蚀剂。 抗蚀剂组合物也用于其它光刻工艺。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：AT477517T

公开(公告)日：2010-08-15

申请号：AT02786917

申请日：2002-12-05

Applicant: IBM

Inventor： HUANG WU-SONG ,  LI WENJIE ,  MOREAU WAYNE ,  MEDEIROS DAVID ,  PETRILLO KAREN ,  LANG ROTBERT N ,  ANGELOPOULOS MARIE

IPC: G03F7/004 ,  G03F7/039 ,  G03F7/30

公开(公告)号：WO2004053594A3

公开(公告)日：2005-11-24

申请号：PCT/US0239048

申请日：2002-12-05

Applicant: IBM ,  HUANG WU-SONG ,  LI WENJIE ,  MOREAU WAYNE ,  MEDEIROS DAVID R ,  PETRILLO KAREN E ,  LANG ROTBERT N ,  ANGELOPOULOS MARIE

Inventor： HUANG WU-SONG ,  LI WENJIE ,  MOREAU WAYNE ,  MEDEIROS DAVID R ,  PETRILLO KAREN E ,  LANG ROTBERT N ,  ANGELOPOULOS MARIE

IPC: G03F7/004 ,  G03F7/039 ,  G03F7/30

CPC classification number: G03F7/0045 ,  G03F7/0392

Abstract: The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well.

Abstract translation: 具有酸敏感成像聚合物和辐射敏感性酸产生剂组分的抗蚀剂组合物包含：（i）选自溶解抑制酸产生剂的第一辐射敏感性酸产生剂，和（ii）选择的第二辐射敏感酸产生剂 由不受保护的酸性官能化酸产生剂和酸不稳定基团保护的酸性官能化辐射敏感酸发生剂组成的组; 能够形成适用于EPL，EUV，软X射线和其他低能量光刻成像应用的高灵敏度抗蚀剂。 抗蚀剂组合物也可用于其它平版印刷工艺。

公开(公告)号：WO0223598A3

公开(公告)日：2002-06-13

申请号：PCT/US0142148

申请日：2001-09-14

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： LU ZHIJIAN ,  MOREAU WAYNE ,  CHEN KUANG JUNG ,  MACK GEORGE

IPC: C11D1/14 ,  C11D11/00 ,  G03F7/30 ,  G03F7/32 ,  G03F7/40

CPC classification number: C11D11/0047 ,  C11D1/146 ,  G03F7/3021 ,  G03F7/32 ,  G03F7/322 ,  G03F7/40

Abstract: Post-development defects in the manufacture of semiconductor devices through the use of surfactants, suchas ammonium lauryl sulfate, incorporated in the rinse water or the developer for the resist. The surfactants effectively remove resist defects in or around the resist pattern without attacking the resist itself.

Abstract translation: 通过使用表面活性剂制造半导体器件的后期缺陷，例如掺入漂洗水中的月桂基硫酸铵或用于抗蚀剂的显影剂。 表面活性剂有效去除抗蚀剂图案内或周围的抗蚀剂缺陷，而不会侵蚀抗蚀剂本身。

公开(公告)号：DE60237318D1

公开(公告)日：2010-09-23

申请号：DE60237318

申请日：2002-12-05

Applicant: IBM

Inventor： HUANG WU-SONG ,  LI WENJIE ,  MOREAU WAYNE ,  MEDEIROS DAVID E ,  PETRILLO KAREN E ,  LANG ROTBERT N ,  ANGELOPOULOS MARIE

IPC: G03F7/004 ,  G03F7/039 ,  G03F7/30

公开(公告)号：AU2002351269A1

公开(公告)日：2004-06-30

申请号：AU2002351269

申请日：2002-12-05

Applicant: IBM

Inventor： HUANG WU-SONG ,  LI WENJIE ,  MOREAU WAYNE ,  MEDEIROS DAVID E ,  PETRILLO KAREN E ,  LANG ROTBERT N ,  ANGELOPOULOS MARIE

IPC: G03F7/004 ,  G03F7/039 ,  G03F7/30

公开(公告)号：DE3683464D1

公开(公告)日：1992-02-27

申请号：DE3683464

申请日：1986-10-07

Applicant: IBM

Inventor： CHION KAOLIN ,  CHOW MING-FEA ,  MOREAU WAYNE ,  SNYDER NANCY WARD

IPC: G03C1/72 ,  G03F7/004 ,  G03F7/022 ,  G03F7/023 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

Abstract: The dissolution rate in alkaline developer solutions of image-wise exposed photoresist systems based on diazoquinone sensitized polyamic acid is reduced to prepare relief images of fine line resolution by reducing the acidity of the polyamic acid prior to exposure.