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    NEGATIVE RESIST COMPOSITION WITH FLUOROSULFONAMIDE-CONTAINING POLYMER
    2.
    发明公开
    NEGATIVE RESIST COMPOSITION WITH FLUOROSULFONAMIDE-CONTAINING POLYMER 审中-公开
    负性成分与聚合物FLUORSULFONAMIDHALTIGEM

    公开(公告)号：EP1664923A4

    公开(公告)日：2008-08-27

    申请号：EP04753854

    申请日：2004-06-02

    Applicant: IBM

    Inventor： LI WENJIE ,  VARANASI PUSHKARA RAO

    IPC: G03C1/675 ,  C08F14/18 ,  C08F214/18 ,  G03C1/73 ,  G03C5/00 ,  G03F7/038

    CPC classification number: C09D133/14 ,  C08F214/18 ,  C08F220/28 ,  C08F220/38 ,  C08K5/0025 ,  C09D133/16 ,  C09D145/00 ,  G03F7/0046 ,  G03F7/0382 ,  Y10S430/107 ,  Y10S430/108 ,  Y10S430/128

    Abstract: A negative resist composition is disclosed, wherein the resist composition includes a polymer having at least one fluorosulfonamide monomer unit having one of the following two formulae: wherein: M is a polymerizable backbone moiety; Z is a linking moiety selected from the group consisting of -C(O)O-, -C(O)-, -OC(O)-, -O-C(O)-C(O)-O-, or alkyl; P is 0 or 1; R 1 is a linear or branched alkyl group of 1 to 20 carbons; R 2 is hydrogen, fluorine, a linear or branched alkyl group of 1 to 6 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 6 carbons; and n is an integer from 1 to 6. A method of forming a patterned material layer on a substrate is also disclosed, wherein the method includes applying the fluorosulfonamide-containing resist composition to the substrate to form a resist layer on the material layer; patternwise exposing the resist layer to imaging radiation; removing portions of the resist layer not exposed to the imaging radiation to create spaces in the resist layer corresponding to the pattern; and removing portions of the material layer at the spaces formed in the resist layer, thereby forming a patterned material layer.

    HIGH SENSITIVITY RESIST COMPOSITIONS FOR ELECTRON-BASED LITHOGRAPHY
    4.
    发明公开
    HIGH SENSITIVITY RESIST COMPOSITIONS FOR ELECTRON-BASED LITHOGRAPHY 有权
    E E E EN E E E E E E E E E E E

    公开(公告)号：EP1586005A4

    公开(公告)日：2009-05-13

    申请号：EP02786917

    申请日：2002-12-05

    Applicant: IBM

    Inventor： HUANG WU-SONG ,  LI WENJIE ,  MOREAU WAYNE ,  MEDEIROS DAVID E ,  PETRILLO KAREN E ,  LANG ROTBERT N ,  ANGELOPOULOS MARIE

    IPC: G03F7/004 ,  G03F7/039 ,  G03F7/30

    CPC classification number: G03F7/0045 ,  G03F7/0392

    Abstract: The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well.

    Positive photoresist composition containing polymer containing fluorosulfonamido group, and its usage
    5.
    发明专利
    Positive photoresist composition containing polymer containing fluorosulfonamido group, and its usage 有权
    含有氟聚酰胺基团的聚合物的正性光电组合物及其用途

    公开(公告)号：JP2005196209A

    公开(公告)日：2005-07-21

    申请号：JP2005000960

    申请日：2005-01-05

    Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

    Inventor： LI WENJIE ,  VARANASI PUSHKARA R

    IPC: C08F220/18 ,  C08F220/28 ,  C08F220/38 ,  C08F232/04 ,  G03C1/76 ,  G03F7/004 ,  G03F7/039 ,  G03F7/20 ,  H01L21/027

    CPC classification number: G03F7/0397 ,  G03F7/0046 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/111

    Abstract: PROBLEM TO BE SOLVED: To provide a positive photoresist composition that exhibits excellent solubility in an aqueous base developer, and its usage.
    SOLUTION: The positive photoresist composition contains a radiation sensitive acid generator and a polymer, wherein this polymer can contain a first repeating unit derived from a sulfonamide monomer containing a fluorosulfonamido functional group and a second repeating unit that can contain an acid-labile pendant moiety. This positive photoresist composition can further contain at least one selected from a solvent, a quenching agent and a surfactant. A pattern formed photoresist layer produced from this positive photoresist composition is formed on a substrate, this positive photoresist layer is exposed with an irradiation pattern for imaging, and parts exposed with the irradiation pattern for imaging in the positive photoresist layer are removed, whereby the corresponding pattern formed substrate can be exposed and is prepared for subsequent processing of semiconductor device production.
    COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题：提供在碱性显影剂水溶液中表现出优异的溶解性的正性光致抗蚀剂组合物及其用途。 解决方案：正性光致抗蚀剂组合物含有辐射敏感性酸产生剂和聚合物，其中该聚合物可以含有源自含有氟磺酰氨基官能团的磺酰胺单体的第一重复单元和可含有酸不稳定性的第二重复单元 吊坠部分。 该正性光致抗蚀剂组合物可以进一步含有选自溶剂，猝灭剂和表面活性剂中的至少一种。 由该正性光致抗蚀剂组合物形成的图案形成的光致抗蚀剂层形成在基板上，利用用于成像的照射图案曝光该正性光致抗蚀剂层，除去在正性光致抗蚀剂层中用于成像的照射图案的部分， 图案形成的基板可以被曝光并且准备用于半导体器件生产的后续处理。 版权所有（C）2005，JPO＆NCIPI

    WET DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITION AND METHOD FOR USE THEREOF
    6.
    发明申请
    WET DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITION AND METHOD FOR USE THEREOF 审中-公开
    可湿性底漆抗反射涂料组合物及其使用方法

    公开(公告)号：WO2007121456A3

    公开(公告)日：2008-03-27

    申请号：PCT/US2007066841

    申请日：2007-04-18

    Applicant: IBM ,  CHEN KUANG-JUNG ,  KHOJASTEH MAHMOUD ,  KWONG RANEE WAI-LING ,  LAWSON MARGARET C ,  LI WENJIE ,  PATEL KAUSHAL S ,  VARANASI PUSHKARA R

    Inventor： CHEN KUANG-JUNG ,  KHOJASTEH MAHMOUD ,  KWONG RANEE WAI-LING ,  LAWSON MARGARET C ,  LI WENJIE ,  PATEL KAUSHAL S ,  VARANASI PUSHKARA R

    IPC: G03C1/00

    CPC classification number: G03F7/091 ,  C08F220/28 ,  C08F222/40 ,  C08F232/08 ,  Y10S430/151

    Abstract: The present invention discloses an antireflective coating composition for applying between a substrate surface and a positive photoresist composition. The antireflective coating composition is developable in an aqueous alkaline developer. The antireflective coating composition comprises a polymer, which comprises at least one monomer unit containing one or more moieties selected from the group consisting of a lactone, maleimide, and an N-alkyl maleimide; and at least one monomer unit containing one or more absorbing moieties. The polymer does not comprise an acid labile group. The present invention also discloses a method of forming and transferring a relief image by using the inventive antireflective coating composition in photolithography.

    Abstract translation: 本发明公开了一种用于在基材表面和正性光致抗蚀剂组合物之间施加的抗反射涂料组合物。 抗反射涂料组合物可在含水碱性显影剂中显影。 抗反射涂料组合物包括聚合物，其包含至少一种含有一个或多个选自内酯，马来酰亚胺和N-烷基马来酰亚胺的部分的单体单元; 和含有一个或多个吸收部分的至少一个单体单元。 聚合物不包含酸不稳定基团。 本发明还公开了一种通过在光刻中使用本发明的抗反射涂料组合物来形成和转印浮雕图像的方法。

    High sensitivity resist composition for electron-based lithography
    8.
    发明专利
    High sensitivity resist composition for electron-based lithography 有权
    用于电子光刻的高灵敏度组合物

    公开(公告)号：JP2007219545A

    公开(公告)日：2007-08-30

    申请号：JP2007116438

    申请日：2007-04-26

    Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

    Inventor： HUANG WU-SONG ,  LI WENJIE ,  MOREAU WAYNE ,  MEDEIROS DAVID E ,  PETRILLO KAREN E ,  LANG ROBERT N ,  ANGELOPOULOS MARIE

    IPC: G03F7/039 ,  G03F7/004 ,  H01L21/027

    Abstract: PROBLEM TO BE SOLVED: To provide a resist composition comprising an acid-sensitive imaging polymer and a radiation-sensitive acid generator component.
    SOLUTION: The resist composition contains (i) a first radiation-sensitive acid generator selected from the group consisting of dissolution inhibiting acid generators and (ii) a second radiation-sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group protected acidic group-functionalized radiation-sensitive acid generators, and enables formation of a highly sensitive resist suitable for use in EPL or EUV, soft X-ray and another low energy intensity lithographic imaging applications. The resist composition is useful in other lithography processes as well.
    COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：提供包含酸敏感成像聚合物和辐射敏感酸产生剂组分的抗蚀剂组合物。 抗蚀剂组合物包含（i）选自溶解抑制酸发生剂的第一辐射敏感性酸产生剂和（ii）选自下组的第二辐射敏感性酸产生剂：未保护的酸性基团 - 官能化酸产生剂和酸不稳定基团保护的酸性官能化辐射敏感酸发生剂，并且能够形成适用于EPL或EUV，软X射线和另一种低能量光刻成像应用的高灵敏度抗蚀剂。 抗蚀剂组合物也用于其它光刻工艺。 版权所有（C）2007，JPO＆INPIT

    HIGH SENSITIVITY RESIST COMPOSITIONS FOR ELECTRON-BASED LITHOGRAPHY
    9.
    发明申请
    HIGH SENSITIVITY RESIST COMPOSITIONS FOR ELECTRON-BASED LITHOGRAPHY 审中-公开
    用于电子光刻的高灵敏度组合物

    公开(公告)号：WO2004053594A3

    公开(公告)日：2005-11-24

    申请号：PCT/US0239048

    申请日：2002-12-05

    Applicant: IBM ,  HUANG WU-SONG ,  LI WENJIE ,  MOREAU WAYNE ,  MEDEIROS DAVID R ,  PETRILLO KAREN E ,  LANG ROTBERT N ,  ANGELOPOULOS MARIE

    Inventor： HUANG WU-SONG ,  LI WENJIE ,  MOREAU WAYNE ,  MEDEIROS DAVID R ,  PETRILLO KAREN E ,  LANG ROTBERT N ,  ANGELOPOULOS MARIE

    IPC: G03F7/004 ,  G03F7/039 ,  G03F7/30

    CPC classification number: G03F7/0045 ,  G03F7/0392

    Abstract: The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well.

    Abstract translation: 具有酸敏感成像聚合物和辐射敏感性酸产生剂组分的抗蚀剂组合物包含：（i）选自溶解抑制酸产生剂的第一辐射敏感性酸产生剂，和（ii）选择的第二辐射敏感酸产生剂 由不受保护的酸性官能化酸产生剂和酸不稳定基团保护的酸性官能化辐射敏感酸发生剂组成的组; 能够形成适用于EPL，EUV，软X射线和其他低能量光刻成像应用的高灵敏度抗蚀剂。 抗蚀剂组合物也可用于其它平版印刷工艺。

    AROMATIC FLUORINE-FREE PHOTOACID GENERATORS AND PHOTORESIST COMPOSITIONS CONTAINING THE SAME
    10.
    发明申请
    AROMATIC FLUORINE-FREE PHOTOACID GENERATORS AND PHOTORESIST COMPOSITIONS CONTAINING THE SAME 审中-公开
    芳香无氟光纤发生器和含有它的光电组合物

    公开(公告)号：WO2009091704A2

    公开(公告)日：2009-07-23

    申请号：PCT/US2009030792

    申请日：2009-01-13

    Applicant: IBM ,  LI WENJIE ,  HUANG WU-SONG S ,  VARANASI PUSHKARA R ,  LIU SEN ,  POPOVA IRENE Y

    Inventor： LI WENJIE ,  HUANG WU-SONG S ,  VARANASI PUSHKARA R ,  LIU SEN ,  POPOVA IRENE Y

    IPC: G03F7/004 ,  C07C317/14 ,  G03F7/26

    CPC classification number: C07C309/59 ,  C07C25/18 ,  C07C309/40 ,  C07C381/12 ,  G03F7/0045 ,  G03F7/0397

    Abstract: Fluorine-free photoacid generators and photoresist compositions containing fluorine-free photoacid generators are enabled as alternatives to PFOS/PFAS photoacid generator-containing photoresists. The photoacid generators are characterized by the presence of a fluorine-free aromatic sulfonate anionic component having one or more electron withdrawing groups. The photoacid generators preferably contain a fluorine-free onium cationic component, more preferably a sulfonium cationic component. The photoresist compositions preferably contain an acid sensitive imaging polymer having a lactone functionality. The compositions are especially useful for forming material patterns using 193nm (ArF) imaging radiation.

    Abstract translation: 含有无氟光致酸发生剂的无氟光致酸发生剂和光致抗蚀剂组合物可用作具有PFOS / PFAS光致酸产生剂的光致抗蚀剂的替代品。 光酸产生剂的特征在于存在具有一个或多个吸电子基团的无氟芳族磺酸盐阴离子组分。 光酸产生剂优选含有无氟鎓阳离子成分，更优选含有阳离子锍组分。 光致抗蚀剂组合物优选含有具有内酯官能度的酸敏感成像聚合物。 组合物特别适用于使用193nm（ArF）成像辐射形成材料图案。

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