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    HIGH SENSITIVITY RESIST COMPOSITIONS FOR ELECTRON-BASED LITHOGRAPHY
    1.
    发明公开
    HIGH SENSITIVITY RESIST COMPOSITIONS FOR ELECTRON-BASED LITHOGRAPHY 有权
    E E E EN E E E E E E E E E E E

    公开(公告)号：EP1586005A4

    公开(公告)日：2009-05-13

    申请号：EP02786917

    申请日：2002-12-05

    Applicant: IBM

    Inventor： HUANG WU-SONG ,  LI WENJIE ,  MOREAU WAYNE ,  MEDEIROS DAVID E ,  PETRILLO KAREN E ,  LANG ROTBERT N ,  ANGELOPOULOS MARIE

    IPC: G03F7/004 ,  G03F7/039 ,  G03F7/30

    CPC classification number: G03F7/0045 ,  G03F7/0392

    Abstract: The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well.

    HIGH SENSITIVITY RESIST COMPOSITIONS FOR ELECTRON-BASED LITHOGRAPHY
    2.
    发明申请
    HIGH SENSITIVITY RESIST COMPOSITIONS FOR ELECTRON-BASED LITHOGRAPHY 审中-公开
    用于电子光刻的高灵敏度组合物

    公开(公告)号：WO2004053594A3

    公开(公告)日：2005-11-24

    申请号：PCT/US0239048

    申请日：2002-12-05

    Applicant: IBM ,  HUANG WU-SONG ,  LI WENJIE ,  MOREAU WAYNE ,  MEDEIROS DAVID R ,  PETRILLO KAREN E ,  LANG ROTBERT N ,  ANGELOPOULOS MARIE

    Inventor： HUANG WU-SONG ,  LI WENJIE ,  MOREAU WAYNE ,  MEDEIROS DAVID R ,  PETRILLO KAREN E ,  LANG ROTBERT N ,  ANGELOPOULOS MARIE

    IPC: G03F7/004 ,  G03F7/039 ,  G03F7/30

    CPC classification number: G03F7/0045 ,  G03F7/0392

    Abstract: The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well.

    Abstract translation: 具有酸敏感成像聚合物和辐射敏感性酸产生剂组分的抗蚀剂组合物包含：（i）选自溶解抑制酸产生剂的第一辐射敏感性酸产生剂，和（ii）选择的第二辐射敏感酸产生剂 由不受保护的酸性官能化酸产生剂和酸不稳定基团保护的酸性官能化辐射敏感酸发生剂组成的组; 能够形成适用于EPL，EUV，软X射线和其他低能量光刻成像应用的高灵敏度抗蚀剂。 抗蚀剂组合物也可用于其它平版印刷工艺。

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