公开(公告)号：SE366864B

公开(公告)日：1974-05-06

申请号：SE1253370

申请日：1970-09-15

Applicant: IBM

Inventor： CASTRUCCI P ,  GATES H ,  HENLE R ,  PRICER W ,  MORTON R ,  MASON J ,  NORTH W

IPC: F22B21/06 ,  G11C17/06 ,  G11C17/14 ,  G11C17/16 ,  H01L23/525 ,  H01L27/00 ,  H01L27/102 ,  G11C17/00

Abstract: A read only memory having the capability of being written into once after manufacture. The cells of the memory are capable of being fused or permanently altered by directing a fusing current to the selected cells. The cell is a monolithic semiconductor device comprising a diode to be biased in a forward direction and a diode to be biased in the reverse direction structured so as to form back-to-back diodes. The reverse diode has a lower reverse breakdown voltage than the forward diode, and a metal connection, unconnected to any remaining circuit elements contacts the semiconductor device between diode junctions. The fusing current causes a metal-semiconductor alloy to form and short out the reverse diode.

公开(公告)号：CA935919A

公开(公告)日：1973-10-23

申请号：CA158250

申请日：1972-12-05

Applicant: IBM

Inventor： MORTON R ,  PRICER W ,  GATES H ,  HENLE R ,  NORTH W ,  CASTRUCCI P ,  MASON J