Abstract:
An error detection system of n inputs is adaptable for fabrication in large scale integrated circuit form. An integrated circuit logic array provides a parity check in response to digital signals received via X and Y decoders. Reduction in the number of array cells and the X and Y driving decoder circuits is obtained by interconnecting even parity subgroups and odd parity subgroups of lines from the X and Y decoders to provide even master parity lines and odd master parity lines. A logic array having less than 2n operative cells compares the signals on the master lines and generates an error parity signal.
Abstract:
A method of making a monolithic integrated semiconductor structure that has a plurality of functionally isolated individual cells that are electrically interconnected. Each of the cells is an object of mirror image cell that is vertically, horizontally and diagonally displaced from the object cell. The plurality of cells provide a memory array with electrical components of each memory cell composed of active and passive semiconductor devices. Other importance aspects of the structure include underpass connections and active devices in a common portion of the structure which are electrically interconnected at the same node potential by means of a highly doped buried region within the common portion of the structure.
Abstract:
A monolithic integrated semiconductor structure is described that has a plurality of functionally isolated individual cells that are electrically interconnected. Each of the cells is an object or mirror image cell that is vertically, horizontally and diagonally displaced from the object cell. The plurality of cells provide a memory array with electrical components of each memory cell composed of active and passive semiconductor devices. Other important aspects of the structure include underpass connections and active devices in a common portion of the structure which are electrically interconnected at the same node potential by means of a highly doped buried region within the common portion of the structure. In particular, a sophisticated packaging scheme for containing such a highly complex array of memory cells is disclosed.
Abstract:
A monolithic circuit bit partitioned computer system for processing M bits of data comprising a substrate for providing electrical interconnection paths to a plurality of M monolithic circuit modules. Each of the M modules includes distinct decoder means, memory means, elemental quasi-arithmetic means and control circuitry, and each of the M modules are uniquely associated with the distinct ones of the M bits of data for collectively and universally processing the M bits of data.
Abstract:
894,248. Electric selective signalling systems. INTERNATIONAL BUSINESS MACHINES CORPORATION. Feb. 9, 1961 [Feb. 10, 1960], No. 4816/61. Class 40 (1). [Also in Group XL (b)] A system for automatically detecting, indicating and replacing a faulty component in logical circuits and for changing the logical function performed by the circuits includes a plurality of amplifiers 1-4, Fig. 5a, which are normally maintained in one signal translating condition, and a plurality of switching elements such as photo-contacts, which couple individual outputs of amplifiers 1-4 to individual inputs of the amplifiers, and are responsive to selectable patterns of applied control effects, e.g. illumination, to modify the signal translating condition of selected ones of amplifiers 1-4. Each amplifier 1-4 may form part of a NOR circuit, as shown in Fig. 2b, in which the transistor is normally biased to a non-conducting condition, but the negative bias is reduced and the transistor rendered conducting if one of the photocontacts # is illuminated. The NOR circuits may be interconnected to perform any logical function as desired by selectively illuminating the photo-contacts, for example by means of a pattern of holes or transparent areas in a card. film or tape. In Fig. 5a, amplifiers 1, 2, 3 are connected in a closed loop to form an oscillator whose output is taken from amplifier 3 on line 46 which is connected to line 49 through an illuminated photo-contact. If one of amplifiers 1, 2, 3 becomes faulty there is no input to amplifier 55, relay 57 operates to close contacts 58 and a pulse is transmitted to a pattern-shifting mechanism 43 which then advances card 29 in the direction shown by arrow 66 so that a fresh pattern of holes is selected, the function performed by amplifiers 1-4 being the same but with the faulty component replaced by another. For example, if amplifier 1 was faulty, amplifiers 2, 3, 4 may be connected in a closed loop, the output being taken from amplifier 4 on lines 45, 49. The system not only provides automatic replacement of faulty components, but may also indicate which component is faulty, e.g. by displaying a number on the side of the card showing which amplifier is not connected in the circuit. It is stated that the system may be used as a substitute for a plugboard in a computer, for example for controlling the arithmetic unit functions.
Abstract:
A read only memory having the capability of being written into once after manufacture. The cells of the memory are capable of being fused or permanently altered by directing a fusing current to the selected cells. The cell is a monolithic semiconductor device comprising a diode to be biased in a forward direction and a diode to be biased in the reverse direction structured so as to form back-to-back diodes. The reverse diode has a lower reverse breakdown voltage than the forward diode, and a metal connection, unconnected to any remaining circuit elements contacts the semiconductor device between diode junctions. The fusing current causes a metal-semiconductor alloy to form and short out the reverse diode.
Abstract:
1,207,084. Bi-stable circuits. INTERNATIONAL BUSINESS MACHINES CORP. 30 Jan., 1969 [6 March, 1968], No. 5522/69. Heading H3T. Each time a bi-stable T1-T2 is switched on by a pulsed power supply V c it reassumes that state it had before switching off, by virtue of internally stored charge whose rate of discharge is made low in relation to the pulsing frequency by arranging semi-conductor switching means such as diodes D1, D2 to confine the discharge to a relatively high impedance path. For example, if T 1 is on, and T2 off when the supply V c goes off, the diodes D1, D2 become non- conductive, transistor T2 can be disregarded since it was off, and transistor T1 can be regarded as a series combination of base-collector diode and capacitance (12, 13, Fig. 2, not shown) and emitter-base diode and capacitance (14, 15). The relatively high voltage which was at T2 collector 4 before switch-off can only discharge through the e-b diode (14) from the capacitance (15). The impedance of the diode (14) rises non-linearly and by a substantial amount when the voltage (at 4) has fallen to about 0À8 volts, and this order of voltage is therefore available when the power switches on again to ensure correct resetting of the bi-stable. The collector voltages in the embodiment swing between 0À05V and 0À75 volts approximately. An emitter coupled pair of transistors (T3, T4, Fig. 3, not shown) having a current source transistor (T5) perform read and write functions, the control pulse applied (at 20) to the current source transistor being preferably coincident with a power supply turn-on pulse. An OR-gate (Fig. 4, not shown) ensures that the power turn-on pulses V c are produced when either normal timing pulses are received (at 44) during normal regeneration, or a control pulse is received (at 46) from a logic decode matrix. T1 and T2 may be multiemitter transistors.
Abstract:
A monolithic integrated memory arrangement comprising, in combination, a plurality of individual memory cells, functionally isolated and electrically interconnected, in which each of said memory cells is object or corresponding to another memory cell mirroring mirror image, in vertical, horizontal and diagonal direction. (Machine-translation by Google Translate, not legally binding)