公开(公告)号：JP2001267565A

公开(公告)日：2001-09-28

申请号：JP2001017484

申请日：2001-01-25

Applicant: IBM

Inventor： BOYD DIANE CATHERINE ,  HANAFI HUSSEIN IBRAHIM ,  IEONG MEIKEI ,  NATZLE WESLEY CHARLES

IPC: H01L29/43 ,  H01L21/28 ,  H01L21/302 ,  H01L21/336 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L21/306

Abstract: PROBLEM TO BE SOLVED: To provide a metal oxide film semiconductor field effect type(MOSFET) device, which has a gate insulator of high permittivity (permittivity higher than 7), low overlap capacity (at most 0.35 fF/μm) and a channel length shorter than the gate length as defined by lithography. SOLUTION: This method contains a damascene treatment process and a chemical oxide removal(COR) process. In the COR process, a large tape is formed on a pad oxide layer. When the pad oxide layer is combined with the gate insulator of high permittivity, low overlap capacity, short channel length and superior device characteristic can be realized, as compared with an MOSFET device which is formed by using a normal complementary metal oxide film semiconductor(CMOS) method.

公开(公告)号：JP2001244460A

公开(公告)日：2001-09-07

申请号：JP2001007903

申请日：2001-01-16

Applicant: IBM

Inventor： BOYD DIANE CATHERINE ,  HANAFI HUSSEIN I ,  NATZLE WESLEY CHARLES

IPC: H01L21/28 ,  H01L21/265 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/088 ,  H01L27/092 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a technique for manufacturing a MOSFET device of 0.05 μm or smaller in size having a super halo doping profile, which provides an excellent short channel characteristic. SOLUTION: This technique utilizes a damascene gate process to obtain a MOSFET structure wherein the thickness of an oxide on source/drain regions is not related to the thickness of a gate oxide and a disposable spacer technique to form a super halo doping profile.