Direct-coupled trigger circuit
    1.
    发明授权
    Direct-coupled trigger circuit 失效
    直接耦合触发电路

    公开(公告)号:US3610959A

    公开(公告)日:1971-10-05

    申请号:US3610959D

    申请日:1969-06-16

    Applicant: IBM

    Inventor: PALMIERI JOHN A

    CPC classification number: H03K3/037

    Abstract: A symmetrical direct-coupled trigger circuit comprising first and second interconnected stages, each including current switch logic means. In the first stage, a plurality of current switches have selected respective collector output lines and emitter output lines interconnected to provide logic signals at a pair of nodes; the nodes are connected to the second stage so that accompanying signal propogation is held to two stages of delay.

    Read only memory and method of using same
    2.
    发明授权
    Read only memory and method of using same 失效
    只读存储器和使用它的方法

    公开(公告)号:US3678475A

    公开(公告)日:1972-07-18

    申请号:US3678475D

    申请日:1971-02-01

    Applicant: IBM

    CPC classification number: G11C17/08

    Abstract: A method and apparatus for storing in a read only memory a matrix having one or more rows each with a majority of '''' 1'''' bits. There is formed the complement of each of those rows having a majority of '''' 1'''' bits to form a new matrix wherein no row has a majority of '''' 1'''' bits. The new matrix is stored in a read only memory. Upon reading out one or more rows of the matrix the bits of the complemented rows are reinverted.

    Abstract translation: 一种用于在只读存储器中存储具有一行或多行具有多数“1”位的矩阵的方法和装置。 形成具有大多数“1”位的那些行中的每一行的互补以形成其中没有行具有多数“1”位的新矩阵。 新矩阵存储在只读存储器中。 在读取矩阵的一行或多行时,补码行的位被重新转换。

    MASTER IMAGE CHIP ORGANIZATION TECHNIQUE OR METHOD

    公开(公告)号:CA1133146A

    公开(公告)日:1982-10-05

    申请号:CA337643

    申请日:1979-10-15

    Applicant: IBM

    Abstract: MASTER IMAGE CHIP ORGANIZATION TECHNIQUE OR METHOD Semiconductor chips are optimally structured to facilitate the maximum number of devices and circuits, and to facilitate fabrication of a wide variety of large scale integrated part numbers. Essentially, none of the semiconductor surface is dedicated for signal and power wiring channels. A master image wiring structure is provided which resides over the semiconductor surface and beneath a power surface. This master image wiring structure makes it possible to personalize the power and signal wiring for a multiple power surface structure. The combined master image structure provides a means for optimally allocating semiconductor area for devices, functional units (micro and macro) and signal and power wiring to facilitate improved density and performance. FI9-78-014

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