公开(公告)号：US3731375A

公开(公告)日：1973-05-08

申请号：US3731375D

申请日：1970-04-16

Applicant: IBM

Inventor： AGUSTA B ,  BARDELL P ,  CASTRUCCI P ,  HENLE R ,  PECORATO R

IPC: G11C11/411 ,  H03K3/286 ,  H03K3/288 ,  B01J17/00 ,  H01L1/16

CPC classification number: H03K3/286 ,  G11C11/4113 ,  H03K3/288 ,  Y10S438/917

Abstract: A method of making a monolithic integrated semiconductor structure that has a plurality of functionally isolated individual cells that are electrically interconnected. Each of the cells is an object of mirror image cell that is vertically, horizontally and diagonally displaced from the object cell. The plurality of cells provide a memory array with electrical components of each memory cell composed of active and passive semiconductor devices. Other importance aspects of the structure include underpass connections and active devices in a common portion of the structure which are electrically interconnected at the same node potential by means of a highly doped buried region within the common portion of the structure.

Abstract translation: 一种制造单片集成半导体结构的方法，其具有电互连的多个功能隔离的单个电池。 每个单元是从对象单元垂直，水平和对角地移位的镜像单元的对象。 多个单元提供具有由有源和无源半导体器件组成的每个存储单元的电气部件的存储器阵列。 该结构的其他重要方面包括在结构的公共部分中的地下通道连接和有源器件，其通过在结构的公共部分内的高掺杂掩埋区在相同的节点电位电互连。