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公开(公告)号:MY124964A
公开(公告)日:2006-07-31
申请号:MYPI20004901
申请日:2000-10-18
Applicant: IBM
Inventor: DOUGLAS D COOLBAUGH , DAVID L HARAME , JAMES S DUNN , PETER J GEISS , PETER B GRAY , KATHRYN T SCHONENBERG , STEPHEN A ST ONGE , SESHADRI SUBBANNA
IPC: H01L21/328 , H01L21/762 , H01L21/8238 , H01L21/763 , H01L21/8222 , H01L21/8248 , H01L21/8249 , H01L27/06
Abstract: A METHOD FOR FORMING A BICMOS INTEGRATED CIRCUIT IS PROVIDED WHICH COMPRISES THE STEPS OF: (A) FORMING A FIRST PORTION OF A BIPOLAR DEVICE IN FIRST REGIONS OF A SUBSTRATE; (B) FORMING A FIRST PROTECTIVE LAYER OVER SAID FIRST REGIONS TO PROTECT SAID FIRST PORTION OF SAID BIPOLAR DEVICES: (C) FORMING FIELD EFFECT TRANSISTOR DEVICES IN SECOND REGIONS OF SAID SUBSTRATE; (D) FORMING A SECOND PROTECTIVE LAYER OVER SAID SECOND REGIONS OF SAID SUBSTRATE TO PROTECT SAID FIELD EFFECT TRANSISTOR DEVICES; (E) REMOVING SAID FIRST PROTECTIVE LAYER; (F) FORMING A SECOND PORTION OF SAID BIPOLAR DEVICES IN SAID FIRST REGIONS OF SAID SUBSTRATE; AND (G) REMOVING SAID SECOND PROTECTIVE LAYER.(FIG 1)