公开(公告)号：AT403937T

公开(公告)日：2008-08-15

申请号：AT04707026

申请日：2004-01-30

Applicant: IBM

Inventor： RAINEY BETH ,  NOWAK EDWARD ,  ALLER INGO ,  KEINERT JOACHIM ,  LUDWIG THOMAS

IPC: H01L21/84 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786

Abstract: The present invention provides a FinFET device that has a first fin and a second fin. Each fin has a channel region and source and drain regions that extend from the channel region. The fins have different heights. The invention has a gate conductor positioned adjacent the fins. The gate conductor runs perpendicular to the fins and crosses the channel region of each of the first fin and second fin. The fins are parallel to one another. The ratio of the height of the first fin to the height of the second fin comprises a ratio of one to 2/3. The ratio is used to tune the performance of the transistor and determines the total channel width of the transistor.

公开(公告)号：AT500610T

公开(公告)日：2011-03-15

申请号：AT03736783

申请日：2003-06-03

Applicant: IBM

Inventor： FRIED DAVID M ,  NOWAK EDWARD ,  RAINEY BETH ,  SADANA DEVENDRA

IPC: H01L21/336 ,  H01L27/088 ,  H01L21/265 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/786

Abstract: The present invention thus provides a device structure and method for forming fin Field Effect Transistors (FETs) that overcomes many of the disadvantages of the prior art. Specifically, the device structure and method provides the ability to form finFET devices from bulk semiconductor wafers while providing improved wafer to wafer device uniformity. Specifically, the method facilitates the formation of finFET devices from bulk semiconductor wafers with improved fin height control. Additionally, the method provides the ability to form finFETs from bulk semiconductor while providing isolation between fins and between the source and drain region of individual finFETs. Finally, the method can also provide for the optimization of fin width. The device structure and methods of the present invention thus provide the advantages of uniform finFET fabrication while using cost effect bulk wafers.