公开(公告)号：WO0247176A2

公开(公告)日：2002-06-13

申请号：PCT/GB0105188

申请日：2001-11-23

Applicant: IBM ,  IBM UK

Inventor： GHOSHAL UTTAM SHYAMALINDU ,  ROBINSON ERROL WAYNE

IPC: H01L23/38 ,  H01L35/16 ,  H01L35/18 ,  H01L35/30 ,  H01L35/32 ,  H01L35/34

CPC classification number: H01L35/30 ,  H01L35/16 ,  H01L35/32

Abstract: A thermoelectric device with improved efficiency is provided. In one embodiment, the thermoelectric device includes a first thermoelement and a second thermoelement electrically coupled to the first thermoelement. An array of first tips are in close physical proximity to, but not necessarily in physical contact with, the first thermoelement at a first set of discrete points. An array of second tips are in close physical proximity to, but not necessarily in physical contact with, the second thermoelement at a second set of discrete points. The arrays of first and second tips are constructed from metal, thus reducing parasitic resistances.

Abstract translation: 提供了一种提高效率的热电装置。 在一个实施例中，热电装置包括电耦合到第一热电偶的第一热电偶和第二热电元件。 在第一组离散点处，第一尖端的阵列与第一热电偶紧密物理上接近但不一定与物理接触。 在第二组离散点处，第二尖端的阵列与第二热电元件接近物理接近但不一定与物理接触。 第一和第二尖端的阵列由金属构成，从而减少寄生电阻。

公开(公告)号：AU2082102A

公开(公告)日：2002-06-18

申请号：AU2082102

申请日：2001-11-23

Applicant: IBM

Inventor： ROBINSON ERROL WAYNE

IPC: H01L23/38 ,  H01L35/16 ,  H01L35/18 ,  H01L35/30 ,  H01L35/32 ,  H01L35/34

Abstract: A thermoelectric device with improved efficiency is provided. In one embodiment, the thermoelectric device includes a first thermoelement and a second thermoelement electrically coupled to the first thermoelement. An array of first tips are in close physical proximity to, but not necessarily in physical contact with, the first thermoelement at a first set of discrete points. An array of second tips are in close physical proximity to, but not necessarily in physical contact with, the second thermoelement at a second set of discrete points. The first and second conical are constructed entirely from metal, thus reducing parasitic resistances.

公开(公告)号：CA2427426C

公开(公告)日：2008-02-19

申请号：CA2427426

申请日：2001-11-23

Applicant: IBM

Inventor： GHOSHAL UTTAM SHYAMALINDU ,  ROBINSON ERROL WAYNE

IPC: H01L23/38 ,  H01L35/04 ,  H01L35/16 ,  H01L35/18 ,  H01L35/30 ,  H01L35/32 ,  H01L35/34

Abstract: A thermoelectric device with improved efficiency is provided. In one embodiment, the thermoelectric device includes a first thermoelement and a second thermoelement electrically coupled to the first thermoelement. An array of first tips are in close physical proximity to, but not necessarily in physical contact with, the first thermoelement at a first set of discrete points. An array of second tips are in close physical proximity to, but not necessarily in physical contact with, the second thermoelement at a second set of discrete points. The arrays of first and second tips are constructed from metal, thus reducing parasitic resistances.

公开(公告)号：CA2427426A1

公开(公告)日：2002-06-13

申请号：CA2427426

申请日：2001-11-23

Applicant: IBM

Inventor： GHOSHAL UTTAM SHYAMALINDU ,  ROBINSON ERROL WAYNE

IPC: H01L23/38 ,  H01L35/16 ,  H01L35/18 ,  H01L35/30 ,  H01L35/32 ,  H01L35/34 ,  H01L35/04

Abstract: A thermoelectric device with improved efficiency is provided. In one embodiment, the thermoelectric device includes a first thermoelement and a second thermoelement electrically coupled to the first thermoelement. An array of first tips are in close physical proximity to, but not necessarily in physical contact with, the first thermoelement at a first set of discrete points. An array of second tips are in close physical proximity to, but not necessarily in physical contact with, the second thermoelement at a second set of discrete points. The arrays of first and second tips are constructed from metal, thus reducing parasitic resistances.

公开(公告)号：GB2364439B

公开(公告)日：2004-09-15

申请号：GB0100661

申请日：2001-01-11

Applicant: IBM

Inventor： CORDES MICHAEL JAMES ,  CORDES STEVEN ALAN ,  GHOSHAL UTTAM SHYAMALINDU ,  ROBINSON ERROL WAYNE ,  SPEIDELL JAMES LOUIS

IPC: H01L23/38 ,  H01L35/28 ,  H01L35/32 ,  H01L35/34

Abstract: Method and apparatus for thermal management of an integrated circuit. A semiconductor device includes an integrated circuit and an integrated thermoelectric cooler formed on a common substrate. A semiconductor device is fabricated by forming an integrated circuit on a front side of the substrate and forming an integrated thermoelectric cooler on a back side of the substrate. A first thermal sink of semiconductor material capable of absorbing heat from the integrated circuit is formed on the back side of the substrate. N-type thermoelectric elements are formed on contacts formed on the first thermal sink. P-type thermoelectric elements are formed on contacts formed on a second thermal sink of semiconductor material capable of dissipating heat. The p-type and n-type thermoelectric elements are bonded to the contacts on the first and second thermal sinks, respectively, by a flip-chip soldering process. Using this method, semiconductor devices including an integrated circuit and integrated modules of thermoelectric elements are formed having cooling capacities corresponding to heat dissipated from different portions of the integrated circuit. As a result, substantially uniform temperature distribution across the integrated circuit can be achieved.

公开(公告)号：GB2364439A

公开(公告)日：2002-01-23

申请号：GB0100661

申请日：2001-01-11

Applicant: IBM

Inventor： CORDES MICHAEL JAMES ,  CORDES STEVEN ALAN ,  GHOSHAL UTTAM SHYAMALINDU ,  ROBINSON ERROL WAYNE ,  SPEIDELL JAMES LOUIS

IPC: H01L23/38 ,  H01L35/28 ,  H01L35/32 ,  H01L35/34

Abstract: A semiconductor device is fabricated by forming an integrated circuit 309 on a front side of a substrate 303 and forming an integrated thermoelectric cooler 310 on a back side of the substrate. A first thermal sink 314 of semiconductor material capable of absorbing heat from the integrated circuit is formed on the back side of the substrate. N- type thermoelectric elements 328,330 are formed on contacts formed on the first thermal sink. P-type thermoelectric elements 358,360 are formed on contacts formed on a second thermal sink 339 of semiconductor material capable of dissipating heat. The p-type and n-type thermoelectric elements are bonded to the contacts on the first and second thermal sinks, respectively, by a flip-chip soldering process. Using this method, semiconductor devices including an integrated circuit and integrated modules of thermoelectric elements are formed having cooling capacities corresponding to heat dissipated from different portions of the integrated circuit. As a result, substantially uniform temperature distribution across the integrated circuit can be achieved.