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公开(公告)号：JP2003266396A
公开(公告)日：2003-09-24
申请号：JP2003006130
申请日：2003-01-14
Applicant: IBM
Inventor： COHEN GUY MOSHE , CORDES STEVEN ALAN , ROSNER JOANNA , TREWHELLA JEANNINE MADELYN
Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing micro-structures, such as micro-electromechanical structures (MEMS) or silicon optical benches. SOLUTION: The method includes using a single mask to pattern a plurality of cavity areas to be etched on a substrate in different etching steps, and then selectively choosing the cavity areas for etching. In a preferred embodiment, the method includes patterning a substrate to identify a plurality of cavity areas to be etched on the substrate and filling at least one of the cavity areas with a distinctive filler material. The filler material is chemically distinctive in the sense that it can be etched selectively with respect to the other filling materials 203, 205, 206, 207. The methods of the invention produce micro- structures with more accurate cavity areas by minimizing overlay error and avoiding the need for lithography over extreme topography. COPYRIGHT: (C)2003,JPO
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公开(公告)号：GB2364439B
公开(公告)日：2004-09-15
申请号：GB0100661
申请日：2001-01-11
Applicant: IBM
Inventor： CORDES MICHAEL JAMES , CORDES STEVEN ALAN , GHOSHAL UTTAM SHYAMALINDU , ROBINSON ERROL WAYNE , SPEIDELL JAMES LOUIS
Abstract: Method and apparatus for thermal management of an integrated circuit. A semiconductor device includes an integrated circuit and an integrated thermoelectric cooler formed on a common substrate. A semiconductor device is fabricated by forming an integrated circuit on a front side of the substrate and forming an integrated thermoelectric cooler on a back side of the substrate. A first thermal sink of semiconductor material capable of absorbing heat from the integrated circuit is formed on the back side of the substrate. N-type thermoelectric elements are formed on contacts formed on the first thermal sink. P-type thermoelectric elements are formed on contacts formed on a second thermal sink of semiconductor material capable of dissipating heat. The p-type and n-type thermoelectric elements are bonded to the contacts on the first and second thermal sinks, respectively, by a flip-chip soldering process. Using this method, semiconductor devices including an integrated circuit and integrated modules of thermoelectric elements are formed having cooling capacities corresponding to heat dissipated from different portions of the integrated circuit. As a result, substantially uniform temperature distribution across the integrated circuit can be achieved.
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公开(公告)号：GB2364439A
公开(公告)日：2002-01-23
申请号：GB0100661
申请日：2001-01-11
Applicant: IBM
Inventor： CORDES MICHAEL JAMES , CORDES STEVEN ALAN , GHOSHAL UTTAM SHYAMALINDU , ROBINSON ERROL WAYNE , SPEIDELL JAMES LOUIS
Abstract: A semiconductor device is fabricated by forming an integrated circuit 309 on a front side of a substrate 303 and forming an integrated thermoelectric cooler 310 on a back side of the substrate. A first thermal sink 314 of semiconductor material capable of absorbing heat from the integrated circuit is formed on the back side of the substrate. N- type thermoelectric elements 328,330 are formed on contacts formed on the first thermal sink. P-type thermoelectric elements 358,360 are formed on contacts formed on a second thermal sink 339 of semiconductor material capable of dissipating heat. The p-type and n-type thermoelectric elements are bonded to the contacts on the first and second thermal sinks, respectively, by a flip-chip soldering process. Using this method, semiconductor devices including an integrated circuit and integrated modules of thermoelectric elements are formed having cooling capacities corresponding to heat dissipated from different portions of the integrated circuit. As a result, substantially uniform temperature distribution across the integrated circuit can be achieved.
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