公开(公告)号：JPH10163590A

公开(公告)日：1998-06-19

申请号：JP29070397

申请日：1997-10-23

Applicant: IBM

Inventor： SAAYANARAYANA KAJA ,  ERIC D PERFECT ,  CHANDRICA PRAZADO ,  KIM H LEFING ,  PAUL A TOTTA

IPC: H05K1/09 ,  H01L23/14 ,  H05K3/24 ,  H05K3/34

Abstract: PROBLEM TO BE SOLVED: To allow wave front of a flat surface and formation of a plurality of small voids to be hardly affected by enhancing reliability, even after reflow of a plural number of times by depositing Ni-Au-Ni-Au layer on a base metallization of electroplated copper. SOLUTION: Mutual connecting metallurgy stack 41 of a substrate 40 suitably contains a chromium layer 42, a copper layer 43, a nickel layer 44, a gold layer 45, a nickel layer 46 and another gold layer 47. The layer 47 is formed by covering the layer 46 by gold plating. In such a structure, the layer 46 is sandwiched between the electrolytic gold layer 45 and the layer 47 to promote diffusing process and hence nickel and gold are mixed in a satisfactory shape necessary for connecting chips. The layer 45 protect the lower nickel 44, and hence damage of pit by solvent or removing material is limited to the upper layer 46.

公开(公告)号：JP2000091271A

公开(公告)日：2000-03-31

申请号：JP14860499

申请日：1999-05-27

Applicant: IBM

Inventor： DEHAVEN PATRICK W ,  GOLDSMITH CHARLES C ,  HURD JEFFERY L ,  SAAYANARAYANA KAJA ,  MICHAEL S REGARE ,  FRED D PERFECT

IPC: H01L21/28 ,  C25D5/50 ,  C25D7/00 ,  H01L21/288 ,  H01L21/3205 ,  H01L23/52 ,  H05K1/09 ,  H05K3/22

Abstract: PROBLEM TO BE SOLVED: To obtain a method for manufacturing an electronic circuit by controlling growth of particle structures of a thin film after deposited on a substrate. SOLUTION: The present invention provides a method for depositingly forming a metallic thin film having different micro-structures on a substrate. The method, which controls particle growth in the micro-structures, includes steps of (a) depositingly forming the metallic thin film having the micro- structures of fine particles on the substrate, and (b) heating the metallic thin film at 70-100 deg.C for at least 5 minutes to change the fine particle micro- structures to stable micro-structures of large particles. A result of X-ray diffraction of an electroplated copper thin film having micro-structures of large particles is illustrated.