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    DISPLAY DEVICES
    1.
    发明专利
    DISPLAY DEVICES 未知

    公开(公告)号：AU6334773A

    公开(公告)日：1975-06-12

    申请号：AU6334773

    申请日：1973-12-06

    Applicant: IBM

    Inventor： SEDGWICK THOMAS OLIVER ,  KAZAN BENJAMIN

    IPC: H05B33/14 ,  G09F13/22 ,  H01J29/10 ,  H01J29/14 ,  H01J31/08 ,  H01J31/12 ,  H01L31/14 ,  H05B33/12 ,  H01J31/18 ,  G09F13/20

    Abstract: Improved image storage and display devices of the type which includes a layer of phosphor material which is stimulated to emit light through photoluminescence. The intensity of emitted light is varied by applying an electric field to the phosphor layer. The field may be applied to the phosphor layer by sandwiching the layer between a layer of insulating material and a layer of electrically conductive material and subjecting the insulator to an electron beam. To alter the field strength at selected locations a writing electron beam is focussed on the insulator at these selected locations. In the alternative, the phosphor layer may be covered on one surface with insulation materials forming a charge trap and the phosphor and insulation layers sandwiched between sets of orthognal electrically conductive strips. Selective field alteration is accomplished by X-Y addressing an orthognal pair of conductive strips.

    2.
    发明专利
    未知

    公开(公告)号：DE3686453T2

    公开(公告)日：1993-03-18

    申请号：DE3686453

    申请日：1986-05-16

    Applicant: IBM

    Inventor： ABERNATHEY JOHN ROBERT ,  LASKY JEROME BRETT ,  NESBIT LARRY ALAN ,  SEDGWICK THOMAS OLIVER ,  STIFFLER SCOTT RICHARD

    IPC: H01L21/02 ,  H01L21/20 ,  H01L21/265 ,  H01L21/316 ,  H01L21/84 ,  H01L27/12 ,  H01L21/205 ,  H01L21/18 ,  H01L21/306

    Abstract: A method of forming a thin silicon layer (12A) upon which semiconductor devices may be constructed. An epitaxial layer (12A, 12B) is grown on a silicon substrate (10), and oxygen or nitrogen ions are implanted into the epitaxial layer in order to form a buried etch-stop layer (14) therein. An oxide layer (16A) is grown on the epitaxial layer, and is used to form a bond to a mechanical support wafer (100). The silicon substrate (10) is removed using grinding and/or HNA, the upper portions (12B) of the epitaxy are removed using EDP, EPP or KOH, and the etch-stop (14) is removed using a non-selective etch. The remaining portion of the epitaxy (12A) forms the thin silicon layer. Due to the uniformity of the implanted ions, the thin silicon layer has a very uniform thickness.

    3.
    发明专利
    未知

    公开(公告)号：DE3686453D1

    公开(公告)日：1992-09-24

    申请号：DE3686453

    申请日：1986-05-16

    Applicant: IBM

    Inventor： ABERNATHEY JOHN ROBERT ,  LASKY JEROME BRETT ,  NESBIT LARRY ALAN ,  SEDGWICK THOMAS OLIVER ,  STIFFLER SCOTT RICHARD

    IPC: H01L21/02 ,  H01L21/20 ,  H01L21/265 ,  H01L21/316 ,  H01L21/84 ,  H01L27/12 ,  H01L21/205 ,  H01L21/18 ,  H01L21/306

    Abstract: A method of forming a thin silicon layer (12A) upon which semiconductor devices may be constructed. An epitaxial layer (12A, 12B) is grown on a silicon substrate (10), and oxygen or nitrogen ions are implanted into the epitaxial layer in order to form a buried etch-stop layer (14) therein. An oxide layer (16A) is grown on the epitaxial layer, and is used to form a bond to a mechanical support wafer (100). The silicon substrate (10) is removed using grinding and/or HNA, the upper portions (12B) of the epitaxy are removed using EDP, EPP or KOH, and the etch-stop (14) is removed using a non-selective etch. The remaining portion of the epitaxy (12A) forms the thin silicon layer. Due to the uniformity of the implanted ions, the thin silicon layer has a very uniform thickness.

    4.
    发明专利
    未知

    公开(公告)号：DE2405830A1

    公开(公告)日：1974-09-26

    申请号：DE2405830

    申请日：1974-02-07

    Applicant: IBM

    Inventor： COWHER MELVYN EUGENE ,  SEDGWICK THOMAS OLIVER

    IPC: H05B33/12 ,  H01J9/20 ,  H01J29/10 ,  H01J29/18 ,  H01J31/08

    Abstract: A charge controlled viewing storage tube uses an insulating film to store charge and a field-effect layer adjacent a phosphor layer for its switching function. Such field-effect layer is now made easier to fabricate in large areas by making it in the form of tiny flakes that are sprinkled onto a phosphor during the latter's curing stage.

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