公开(公告)号：EP1745515A4

公开(公告)日：2009-04-01

申请号：EP04822011

申请日：2004-04-22

Applicant: IBM

Inventor： FREEMAN GREGORY G ,  RIEH JAE-SUNG ,  SHERIDAN DAVID C ,  ST ONGE STEPHEN A ,  STRICKER ANDREAS D ,  VOLDMAN STEVEN H

IPC: H01L29/00 ,  H01L21/331 ,  H01L21/332 ,  H01L29/08 ,  H01L29/737 ,  H01L29/74 ,  H01L29/861 ,  H01L29/872 ,  H01L29/93

CPC classification number: H01L29/66363 ,  H01L29/0821 ,  H01L29/0834 ,  H01L29/66242 ,  H01L29/7378 ,  H01L29/74 ,  H01L29/861 ,  H01L29/872 ,  H01L29/93

Abstract: Disclosed is a method of forming a semiconductor structure that includes a discontinuous non-planar sub-collector having a different polarity than the underlying substrate. In addition, this structure includes an active area (collector) above the sub-collector, a base above the active area, and an emitter above the base. The distance between the discontinuous portions of the discontinuous sub-collector tunes the performance characteristics of the semiconductor structure. The performance characteristics that are tunable include breakdown voltage, unity current gain cutoff frequency, unity power gain cutoff frequency, transit frequency, current density, capacitance range, noise injection, minority carrier injection and trigger and holding voltage.