公开(公告)号：EP2111637A4

公开(公告)日：2012-08-08

申请号：EP08728172

申请日：2008-01-24

Applicant: IBM

Inventor： BELYANSKY MICHAEL P ,  BONILLA GRISELDA ,  LIU XIAO HU ,  NGUYEN SON VAN ,  SHAW THOMAS M ,  SHOBHA HOSADURGA K ,  YANG DAEWON

IPC: H01L23/12 ,  H01L21/3105 ,  H01L21/318 ,  H01L21/768

CPC classification number: H01L21/02123 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/318 ,  H01L21/3185 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76834

公开(公告)号：WO2008091985A3

公开(公告)日：2008-10-02

申请号：PCT/US2008051870

申请日：2008-01-24

Applicant: IBM ,  BELYANSKY MICHAEL P ,  BONILLA GRISELDA ,  LIU XIAO HU ,  NGUYEN SON VAN ,  SHAW THOMAS M ,  SHOBHA HOSADURGA K ,  YANG DAEWON

Inventor： BELYANSKY MICHAEL P ,  BONILLA GRISELDA ,  LIU XIAO HU ,  NGUYEN SON VAN ,  SHAW THOMAS M ,  SHOBHA HOSADURGA K ,  YANG DAEWON

IPC: H01L23/12

CPC classification number: H01L21/02123 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/318 ,  H01L21/3185 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76834

Abstract: A dielectric cap (100) and related methods are disclosed. In one embodiment, the dielectric cap (100) includes a dielectric material (108) having an optical band gap (e.g., greater than about 3.0 electron-Volts) to substantially block ultraviolet radiation during a curing treatment, and including nitrogen with electron donor, double bond electrons. The dielectric cap (100) exhibits a high modulus and is stable under post ULK UV curing treatments for, for example, copper low k back-end-of-line (BEOL) nanoelectronic devices, leading to less film and device cracking and improved reliability.

Abstract translation: 公开了一种电介质帽（100）和相关方法。 在一个实施例中，电介质帽（100）包括具有光学带隙（例如，大于约3.0电子伏特）的介电材料（108）以在固化处理期间基本上阻挡紫外辐射，并且包括具有电子供体的氮， 双键电子。 电介质帽（100）表现出高模量，并且在例如铜低k线后端（BEOL）纳米电子器件的ULK UV固化处理下稳定，导致更少的膜和器件开裂以及更高的可靠性 。

公开(公告)号：SG155831A1

公开(公告)日：2009-10-29

申请号：SG2009007931

申请日：2009-02-04

Applicant: CHARTERED SEMICONDUCTOR MFG ,  SAMSUNG ELECTRONICS CO LTD ,  IBM

Inventor： WIDODO JOHNNY ,  HAK KIM JAE ,  BONILLA GRISELDA ,  MOLIS STEVEN E ,  RESTAINO DARRYL D ,  SHOBHA HOSADURGA K

Abstract: Methods of forming devices include forming a first electrically insulating layer having a metal interconnection therein, on a substrate and then forming a first electrically insulating barrier layer on an upper surface of the metal interconnection and on the first electrically insulating layer. The first electrically insulating barrier layer is exposed to a plasma that penetrates the first electrically insulating barrier and removes oxygen from an upper surface of the metal interconnection. The barrier layer may have a thickness in a range from about 5 A to about 50 A and the plasma may be a hydrogen-containing plasma that converts oxygen on the upper surface of the metal interconnection to water.