公开(公告)号：EP2111637A4

公开(公告)日：2012-08-08

申请号：EP08728172

申请日：2008-01-24

Applicant: IBM

Inventor： BELYANSKY MICHAEL P ,  BONILLA GRISELDA ,  LIU XIAO HU ,  NGUYEN SON VAN ,  SHAW THOMAS M ,  SHOBHA HOSADURGA K ,  YANG DAEWON

IPC: H01L23/12 ,  H01L21/3105 ,  H01L21/318 ,  H01L21/768

CPC classification number: H01L21/02123 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/318 ,  H01L21/3185 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76834

公开(公告)号：EP1854131A4

公开(公告)日：2011-03-30

申请号：EP06849665

申请日：2006-01-12

Applicant: IBM

Inventor： DIMITRAKOPOULOS CHRISTOS D ,  GATES STEPHEN M ,  GRILL ALFRED ,  LANE MICHAEL W ,  LINIGER ERIC G ,  LIU XIAO HU ,  NGUYEN SON VAN ,  NEUMAYER DEBORAH A ,  SHAW THOMAS M

IPC: H01L21/20 ,  B05C11/00 ,  B32B3/26

CPC classification number: H01L21/76834 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  Y10T428/249953 ,  Y10T428/249969 ,  Y10T428/249979

公开(公告)号：JP2006216541A

公开(公告)日：2006-08-17

申请号：JP2006013182

申请日：2006-01-20

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： EDELSTEIN DANIEL C ,  GATES STEPHEN M ,  GRILL ALFRED ,  LANE MICHAEL ,  LIN QINGHUANG ,  MILLER ROBERT D ,  NEUMAYER DEBORAH A ,  NGUYEN SON VAN

IPC: H01B3/00 ,  C23C16/42 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To provide a low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures. SOLUTION: The low-k dielectric material includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si-CH 3 functional groups, and another fraction of the C atoms are bonded as Si-R-Si, wherein R is phenyl, -[CH 2 ] n -, (n is greater than or equal to 1), HC=CH, C=CH 2 , C≡C or a [S] n linkage, (n is as defined above). COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供具有增加的内聚强度的低k电介质材料，用于包括互连和感测结构的电子结构中。 解决方案：低k电介质材料包括Si，C，O和H的原子，其中C原子的一部分键合为Si-CH 3 S / S官能团，另一部分 的C原子键合为Si-R-Si，其中R是苯基， - （n大于或等于1） ，HC = CH，C = CH 2 ，C≡C或[S] n 键，（n如上所定义）。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：WO2007089223A3

公开(公告)日：2007-11-01

申请号：PCT/US2006001154

申请日：2006-01-12

Applicant: IBM ,  DIMITRAKOPOULOS CHRISTOS D ,  GATES STEPHEN M ,  GRILL ALFRED ,  LANE MICHAEL W ,  LINIGER ERIC G ,  LIU XIAO HU ,  NGUYEN SON VAN ,  NEUMAYER DEBORAH A ,  SHAW THOMAS M

Inventor： DIMITRAKOPOULOS CHRISTOS D ,  GATES STEPHEN M ,  GRILL ALFRED ,  LANE MICHAEL W ,  LINIGER ERIC G ,  LIU XIAO HU ,  NGUYEN SON VAN ,  NEUMAYER DEBORAH A ,  SHAW THOMAS M

IPC: H01L21/20 ,  B05C11/00 ,  B32B3/26

CPC classification number: H01L21/76834 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  Y10T428/249953 ,  Y10T428/249969 ,  Y10T428/249979

Abstract: A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than 46 MPa.

Abstract translation: 描述了一种用于形成具有受控双轴应力的超低介电常数层的方法，其包括通过PECVD和旋涂涂覆之一形成含有Si，C，O和H的层并且在包含非常低浓度 的氧气和水每个小于10ppm。 还通过使用介电常数不超过2.8的方法来描述材料。 本发明克服了形成低双轴应力小于46MPa的薄膜的问题。

公开(公告)号：JP2011211175A

公开(公告)日：2011-10-20

申请号：JP2011044902

申请日：2011-03-02

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： NGUYEN SON VAN ,  GRILL ALFRED ,  GATES STEPHEN M ,  VO TUAN ANH ,  DIMITRAKOPOULOS CHRISTOS ,  NEUMAYER DEBORAH ANN ,  DAMON B FARMER

IPC: H01L29/78 ,  H01L21/28 ,  H01L29/786

CPC classification number: H01L29/1606 ,  H01L29/7781 ,  H01L29/78 ,  H01L29/7831

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor structure and electronic device, formed in high density, and having smaller structural dimensions and a more exact shape.SOLUTION: Semiconductor structures and electronic devices include at least one layer of an interfacial dielectric material located on an upper surface of a carbon-based material. The at least one layer of interfacial dielectric material has a short-range crystallographic bonding structure, typically hexagonal, that is the same as that of the carbon-based material and, as such, the at least one layer of interfacial dielectric material does not change the electronic structure of the carbon-based material. The presence of the at least one layer of interfacial dielectric material having the same short-range crystallographic bonding structure as that of the carbon-based material improves the interfacial bonding between the carbon-based material and any overlying material layer, including a dielectric material, a conductive material or a combination of a dielectric material and a conductive material. The improved interfacial bonding in turn facilitates formation of devices including a carbon-based material.

Abstract translation: 要解决的问题：提供一种形成为高密度且具有较小结构尺寸和更精确形状的半导体结构和电子器件。解决方案：半导体结构和电子器件包括至少一层界面介电材料，位于 碳基材料的上表面。 所述至少一层界面介电材料具有与碳基材料相同的短程结晶结合结构，通常是六边形，因此至少一层界面介电材料不会改变 碳基材料的电子结构。 具有与碳基材料相同的短程结晶结合结构的至少一层界面介电材料的存在改善了碳基材料和任何覆盖材料层（包括介电材料）之间的界面结合， 导电材料或介电材料和导电材料的组合。 改进的界面结合又有助于形成包括碳基材料的装置。

公开(公告)号：JP2009044162A

公开(公告)日：2009-02-26

申请号：JP2008224431

申请日：2008-09-02

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： GATES STEPHEN M ,  DIMITRAKOPOULOS CHRISTOS D ,  GRILL ALFRED ,  NGUYEN SON VAN

IPC: H01L21/312 ,  H01L21/768 ,  C23C16/00 ,  C23C16/40 ,  C23C16/56 ,  H01B3/46 ,  H01L21/31 ,  H01L21/316 ,  H01L23/522 ,  H01L23/532 ,  H01L23/58

CPC classification number: H01L21/02126 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31633 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a dielectric material containing elements of Si, C, O and H, having specific mechanical property values (tensile stress, elastic modulus, hardness, cohesive force, and crack speed in water) which provide stable ultralow-k film without deterioration arising from steam or integration processing. SOLUTION: The dielectric materials 34, 38 and 44 have dielectric constants of approximately 2.8 or less, tensile stress of less than 45 Mpa, elastic modulus of somewhere between 2 and 15 GPa, hardness between around 0.2 to 2 GPa. Additionally, an electronic device structure containing the dielectric materials and various methods for producing them are disclosed. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供含有Si，C，O和H元素的电介质材料，其具有特定的机械性能值（拉伸应力，弹性模量，硬度，内聚力和水中的裂纹速度），其提供稳定的 超低k电影没有蒸汽或整合处理的劣化。 电介质材料34,38和44具有约2.8或更小的介电常数，小于45Mpa的拉伸应力，2至15GPa之间的弹性模量，约0.2至2GPa之间的硬度。 另外，公开了包含电介质材料的电子器件结构及其制造方法。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JPH10135326A

公开(公告)日：1998-05-22

申请号：JP27283597

申请日：1997-10-06

Applicant: IBM ,  SIEMENS AG

Inventor： GAMBINO JEFFREY PETER ,  NGUYEN SON VAN ,  STENGL REINHARD

IPC: H01L21/28 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To increase the densities of borophosphate-silicate glass and an oxide existing on the glass before forming a pattern, by exposing the glass and undoped oxide to a high temperature before a line patterning step, a contact etching step, and an ion implanting step. SOLUTION: After a dielectric layer of borophosphate-silicate glass having fluidity is stuck to the surface of a substrate, another dielectric layer of a material having no fluidity is stuck to the surface of the glass layer. Then, contact etching and a high dose of ion implantation are performed so that an undoped oxide composed of SiO2 existing on the dielectric layer having no fluidity can be exposed to a junction activating annealing temperature, namely, a high annealing temperature of about 800 deg.C to 1,100 deg.C. After the ion implantation, contacts and lines are metallized by again exposing the contacts and lines to a high annealing temperature. Therefore, the densities of the borophosphate-silicate glass and SiO2 existing on the glass can be increased before forming a pattern.

公开(公告)号：JP2007194639A

公开(公告)日：2007-08-02

申请号：JP2007010824

申请日：2007-01-19

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： DEBORAH ANNE NEWMEYER ,  STEPHEN MCCONELL GATES ,  VISHNUBHAI V PATEL ,  GRILL ALFRED ,  NGUYEN SON VAN ,  ALI AFZALI-ARDAKANI

IPC: H01L21/316

CPC classification number: H01L21/31695 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/02362 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide SiCOH dielectrics and its manufacturing method. SOLUTION: There is provided a useful porous composite material in semiconductor device manufacturing in which the diameter (or the feature size) of a pore and pore size distribution (PSD) are controlled using a nanoscale and which shows an improved cohesive force (or which is the same with improved fracture toughness or improved brittleness) and increase in the power of resistance to the deterioration of the property of wafer such as stress corrosion cracking, Cu invasion, and other important property. The porous composite material is manufactured using at least one bifunctional organic pore source as a precursor compound. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供SiCOH电介质及其制造方法。 解决方案：在半导体器件制造中提供了有用的多孔复合材料，其中使用纳米尺度控制孔和孔径分布（PSD）的直径（或特征尺寸）并且其显示出改善的内聚力（ 或与改善的断裂韧性或脆性提高相同），耐腐蚀性能的提高，例如应力腐蚀开裂，Cu侵蚀等重要的特性。 使用至少一种双功能有机孔源作为前体化合物制造多孔复合材料。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2005203794A

公开(公告)日：2005-07-28

申请号：JP2005007763

申请日：2005-01-14

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： GATES STEPHEN M ,  DIMITRAKOPOULOS CHRISTOS D ,  GRILL ALFRED ,  NGUYEN SON VAN

IPC: H01L21/768 ,  C23C16/00 ,  C23C16/40 ,  C23C16/56 ,  H01L21/31 ,  H01L21/312 ,  H01L21/316 ,  H01L23/522 ,  H01L23/532 ,  H01L23/58

CPC classification number: H01L21/02126 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31633 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a dielectric material which includes Si, C, O and H atoms and has specific mechanical characteristic (tensile stress, degree of elasticity, hardness, cohesive strength, crack velocity in water) values giving stable ultralow k film which is not deteriorated by steam or integration processing. SOLUTION: This dielectrics materials has an about ≤2.8 dielectric constant, tensile stress of less than 45 Mpas, degree of elasticity of about 2 to about 15 GPas, and hardness of about 0.2 to about 2 GPas. An electronic device structure including the dielectric materials by this invention and various methods by which the dielectrics materials of this invention are manufactured are also disclosed. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供包含Si，C，O和H原子的介电材料，具有特定的机械特性（拉伸应力，弹性，硬度，内聚强度，水中的裂纹速度），给出稳定的超低温 k膜不会因蒸汽或整合处理而恶化。 解决方案：该电介质材料具有约≤2.8介电常数，小于45Mpa的拉伸应力，约2至约15GPas的弹性度，以及约0.2至约2GPas的硬度。 还公开了包括本发明的电介质材料和制造本发明的电介质材料的各种方法的电子器件结构。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JPH10163453A

公开(公告)日：1998-06-19

申请号：JP28493997

申请日：1997-10-17

Applicant: IBM ,  SIEMENS AG ,  LAM RES CORP

Inventor： NGUYEN SON VAN ,  ILG MATTHIAS ,  URAM KEVIN J

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To provide a simple damassine manufacturing method for manufacture of a stack capacitor of high aspect surface area suitable for a gigabit DRAM device. SOLUTION: The accumulative charge of a capacitor increases by increasing the accumulative node region. As stack capacitor of high aspect surface area ratio can be manufactured without increasing the maximum cell dimension. The accumulation node is formed by the borophossilicate glass (block 1) in low doped or high doped concentration which is stuck in accurate nanometer dimension by one process stage, and either the doped layer or the nondoped layer is etched (block 3) to have high etching speed. This etching manufactures (block 4) finger-shape shaped protrusions within the nodes, and these protrusion give larger surface region, using a very simplified method where processing stages are limited.