公开(公告)号：EP1992012A4

公开(公告)日：2011-08-17

申请号：EP07861255

申请日：2007-03-01

Applicant: IBM

Inventor： YANG CHIH-CHAO ,  SPOONER TERRY A ,  VAN DER STRATEN OSCAR

IPC: H01L21/4763

CPC classification number: H01L21/76831 ,  H01L21/02063 ,  H01L21/31105 ,  H01L21/31144 ,  H01L21/32131 ,  H01L21/76805 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76873 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP1941545A4

公开(公告)日：2011-03-30

申请号：EP06825349

申请日：2006-10-03

Applicant: IBM

Inventor： YANG CHIH-CHAO ,  GAUDET SIMON ,  LAVOIE CHRISTIAN ,  PONOTH SHOM ,  SPOONER TERRY A

IPC: H01L23/58 ,  H01L23/532

CPC classification number: H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：JP2006024943A

公开(公告)日：2006-01-26

申请号：JP2005199284

申请日：2005-07-07

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： LANE MICHAEL ,  CHIRAS STEFANIE R ,  SPOONER TERRY A ,  ROSENBERG ROBERT ,  EDELSTEIN DANIEL C

IPC: H01L21/3205 ,  H01L21/28 ,  H01L21/768 ,  H01L23/52

CPC classification number: C25D5/10 ,  C25D5/50 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76807 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76877 ,  H01L21/76886 ,  H01L23/53233 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a conductive material having a conductive core region containing copper and an interface region, and to provide a manufacturing method of the conductive material. SOLUTION: The conductive material comprises a conductive core region containing copper, and one or more metal selected from iridium, osmium, and rhenium in terms of atomic percentage of 0.001 to 0.6, and an interface region. The interface region contains one or more metal in terms of at least 80 atomic percentage or more. In the interface region, a seed layer containing copper, and one or more metal selected from iridium, osmium, and rhenium is formed, and a conductive layer composed of copper is formed thereon. Then, by polishing the conductive layer, a surface material of a polished copper is constituted. Thus, the conductive material is formed by annealing the polished surface material of copper at a sufficient temperature for causing migration of one or more metals from the seed layer to the polished surface. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供具有含铜和界面区域的导电芯区域的导电材料，并提供导电材料的制造方法。 解决方案：导电材料包括含有铜的导电芯区域和以原子百分比为0.001至0.6的选自铱，锇和铼的一种或多种金属和界面区域。 界面区域包含至少80原子百分比或更多的一种或多种金属。 在界面区域中，形成含有铜的籽晶层和选自铱，锇和铼的一种或多种金属，并且在其上形成由铜构成的导电层。 然后，通过研磨导电层，构成抛光铜的表面材料。 因此，导电材料通过在足够的温度下退火抛光的铜表面材料形成，以使一种或多种金属从晶种层向抛光表面迁移。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2007318141A

公开(公告)日：2007-12-06

申请号：JP2007135218

申请日：2007-05-22

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： LIN QINGHUANG ,  YANG CHIH-CHAO ,  SPOONER TERRY A ,  GRISELDA BONILLA

IPC: H01L21/768 ,  H01L21/312 ,  H01L21/316 ,  H01L21/3205 ,  H01L23/52

CPC classification number: H01L23/53295 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide an interconnection structure with improved adhesion between a noble metal liner and dielectric material adjacent thereto.
SOLUTION: The structure relates to the interconnection structure with improved adhesion between a chemically etched dielectric material and a noble metal liner, as well as a method for manufacturing the structure. The structure includes a step of processing the chemically etched dielectric material to change chemical properties of the dielectric material so that the processed surface can become hydrophobic. The processing step is carried out before deposition of the noble metal liner, whereby the adhesion between the chemically etched dielectric material and the noble metal liner can be improved.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供具有改进的贵金属衬垫和与其相邻的电介质材料之间的粘附性的互连结构。 解决方案：该结构涉及具有改进的化学蚀刻介电材料和贵金属衬垫之间的粘附性的互连结构以及制造该结构的方法。 该结构包括处理化学蚀刻的电介质材料以改变电介质材料的化学性质以使经处理的表面变得疏水的步骤。 在沉积贵金属衬垫之前进行处理步骤，从而可以改善化学蚀刻的电介质材料和贵金属衬垫之间的粘合性。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007194621A

公开(公告)日：2007-08-02

申请号：JP2006348855

申请日：2006-12-26

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： SHOM PONOTH ,  CHEN STEVEN SHYNG-TSONG ,  PHIZHIMONS JOHN A ,  SPOONER TERRY A

IPC: H01L23/52 ,  H01L21/288 ,  H01L21/3205

CPC classification number: H01L21/76873 ,  H01L21/7688 ,  H01L2221/1089

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor structure having a plating enhancement layer.
SOLUTION: There is disclosed a method of manufacturing a semiconductor structure comprising: a step for forming an interlayer dielectric (ILD) layer on a semiconductor layer; a step for forming a conductive plating enhancement layer (PEL) on the ILD layer; a step for patterning the ILD and the PEL; a step for depositing a seed layer in the pattern that is formed by the ILD and the PEL; and a step for plating the top of the seed layer with copper. The PEL reduces resistance over an entire wafer, and functions to facilitate copper plating. The PEL is preferably an optically transparent conductive layer.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种制造具有电镀增强层的半导体结构的方法。 解决方案：公开了一种制造半导体结构的方法，包括：在半导体层上形成层间电介质层（ILD）层的步骤; 用于在ILD层上形成导电电镀增强层（PEL）的步骤; 图案化ILD和PEL的步骤; 用于在由ILD和PEL形成的图案中沉积种子层的步骤; 以及用铜电镀种子层的顶部的步骤。 PEL降低整个晶片的电阻，并且有助于铜电镀。 PEL优选为光学透明导电层。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：WO2007044305A3

公开(公告)日：2007-12-13

申请号：PCT/US2006038475

申请日：2006-10-03

Applicant: IBM ,  YANG CHIH-CHAO ,  GAUDET SIMON ,  LAVOIE CHRISTIAN ,  PONOTH SHOM ,  SPOONER TERRY A

Inventor： YANG CHIH-CHAO ,  GAUDET SIMON ,  LAVOIE CHRISTIAN ,  PONOTH SHOM ,  SPOONER TERRY A

IPC: H01L23/58

CPC classification number: H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An interconnect structure which includes a plating seed layer that has enhanced conductive material, preferably, Cu, diffusion properties is provided that eliminates the need for utilizing separate diffusion and seed layers. Specifically, the present invention provides an oxygen/nitrogen transition region within a plating seed layer for interconnect metal diffusion enhancement. The plating seed layer may include Ru, Ir or alloys thereof, and the interconnect conductive material may include Cu, Al, AlCu, W, Ag, Au and the like. Preferably, the interconnect conductive material is Cu or AlCu. In more specific terms, the present invention provides a single seeding layer which includes an oxygen/nitrogen transition region sandwiched between top and bottom seed regions. The presence of the oxygen/nitrogen transition region within the plating seed layer dramatically enhances the diffusion barrier resistance of the plating seed.

Abstract translation: 提供了一种互连结构，该互连结构包括具有增强的导电材料（优选Cu）扩散性质的镀敷种子层，其消除了使用单独的扩散层和种子层的需要。 具体而言，本发明提供用于互连金属扩散增强的镀敷种子层内的氧/氮过渡区。 电镀种子层可以包括Ru，Ir或其合金，互连导电材料可以包括Cu，Al，AlCu，W，Ag，Au等等。 优选地，互连导电材料是Cu或AlCu。 更具体地说，本发明提供了包括夹在顶部和底部种子区之间的氧/氮过渡区的单种晶层。 电镀种子层内氧/氮过渡区的存在显着增强了电镀种子的扩散阻挡性。